[D-4-8] Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN

Doo-Hyeb YOUN, Mohamed LACHAB, Maosheng HAO, Tomoya SUGAHARA, Kenji YAMASHITA, Yoshiki NAOI, Shiro SAKAI (1.Department of Electrical and Electronic Engineering, University of Tokushima, 2.Satellite Venture Business Laboratory, Nitride Photonic Semiconductor Laboratory of Tokushima University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE

Naoki Kobayashi, Seigo Ando, Toshio Nishida, Yasuyuki Kobayashi, Tetsuya Akasaka (1.NTT Basic Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs

Morimichi Mutoh, Naohiro Tsurumi, Tamotsu Hashizume, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics

Takayuki Onozu, Isao Gunji, Ryuji Miura, S. Salai Cheettu Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Yasushi Iyechika, Takayoshi Maeda (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] Band Offset Analysis of GaNAs/GaAs by X-Ray Photoelectron Spectroscopy

T. Kitatani, M. Kondow, T. Kikawa, Y. Yazawa, M. Okai, K. Uomi (1.RWCP Optical Interconnection Hitachi Lab., c/o Central Research Lab., Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-5] Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs

R. Terauchi, Y. Ohno, T. Adachi, A. Sato, F. Matsukura, A. Tackeuchi, H. Ohno (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2.Department of Applied Physics, Waseda University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-6] Low-Temperature Photocurrent Measurements of Asymmetric Double-Well GaAs/AlAs Superlattices with Layer Sequence Inversion

Misaichi Takeuchi, Kenji Kawashima, Kenzo Fujiwara (1.Department of Electric Engineering, Kyushu Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-5-7] Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells

K. Kawasaki, M. Imazawa, K. Kawashima K. Fujiwara, M. Hosoda, K. Tominaga (1.Department of Electric Engineering, Kyushu Institute of Technology, 2.ART Optical and Radio Communications Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Copper Interconnects for Advanced Logic and DRAM

James G. Ryan, Gary B. Bronner, John P. Hummel, Thomas N. Theis (1.IBM Microelectronics, SRDC and, 2.IBM Research, T.J. Watson Research Center)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] WSiN Diffusion Barrier Formed by ECR Plasma Nitridation for Copper Damascene Interconnection

A. Hirata, K. Machida, N. Awaya, H. Kyuragi, M. Maeda (1.NTT System Electronics Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download