[B-5-3] Improved Ti SALICIDE Technology Using High Dose Ge Pre-Amorphization for 0.10um CMOS and Beyond

K. Ohuchi, K. Miyashita, A. Murakoshi, H. Yoshimura, K. Suguro, Y. Toyoshima (1.ULSI Device Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation, 2.ULSI Process Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate

T. Y. Chang, T. F. Lei, T. S. Chao, H. C. Lin, T. Y. Huang, S. K. Chen, A. Tuan, S. Chou (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 2.National Nano Device Laboratory, Air Products Asia, 3.San Fu Co Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-5-5] Bandgap Engineering for the Suppression of the Short Channel Effect of sub-0.1um p-channel MOSFETs

A. Nishiyama, K. Matsuzawa, S. Takagi (1.Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Nano-Crystal and Quantum Dot Memories: Device Properties

Sandip Tiwari, J. J. Welser, F. Rana, A. Kumar (1.IBM Research Division, Thomas J. Watson Research Center)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Silicon Nano-Crystal Memory with Tunneling Nitride

Ilgweon Kim, Hyungsik Kim, Jongho Lee, Hyungcheol Shin (1.Department of Electrical Engineering, KAIST, 2.LG Semicon Co., Ltd, 3.School of Electrical Engineering, Wonkwang University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo, 2.VLSI Design and Education Center, University of Tokyo, 3.Department of Physics & Institute of Solid State Physics, Nanjing University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures

A. KOHNO, H. MURAKAMI, M. IKEDA, H. NISHIYAMA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-5] A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector

Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, K. Murase (1.NTT Basic Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-6] Si In-Plane Floating-Dot Memory with a Single Electron Transistor

Toshitsugu Sakamoto, Hisao Kawaura, Toshio Baba (1.NEC Fundamental Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-3-7] High Speed Silicon Single-Electron Random Access Memory with Long Retention Time

N. J. Stone, H. Ahmed (1.Microelectronics Research Centre, Cavendish Laboratory, Cambridge University)

1998 International Conference on Solid State Devices and Materials |PDF Download