[C-5-2] Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al2O3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process

Kazuhiko Matsumoto, Yoshitaka Gotoh, Tatsuro Maeda, John A. Dagata, James S. Harris (1.Electrotechnical Laboratory, 2.National Institute of Standards and Technology, 3.Stanford University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Observation of Coulomb Blockade in Resistively Coupled Single Electron Transistor

Yuri Pashkin, Yasunobu Nakamura, Jaw-Shen Tsai (1.NEC Fundamental Research Laboratories, 2.Japan Science and Technology Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] Transport Properties of Resistively-Coupled Single-Electron Transistor

Fujio WAKAYA, Kazuki KITAMURA, Shuichi IWABUCHI, Kenji GAMO (1.Department of Physical Science, Graduate School of Engineering Science, Osaka University, 2.Department of Physics, Faculty of Science, Nara Women's University, 3.Research Center for Materials Science at Extreme Conditions, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-5-5] Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices

Akinobu Kanda, Martin C. Geisler, Masaki Suzuki, Koji Ishibashi, Yoshinobu Aoyagi, Takuo Sugano (1.The Institute of Physical and Chemical Research (RIKEN), 2.Department of Electrical and Electronic Engineering, Toyo University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-5-6] Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations

Zahid A. K. Durrani, Andrew C. Irvine, Haroon Ahmed, Serge Biesemans (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, 2.Advanced Silicon Devices, Interuniversity Microelectronics Center (IMEC))

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-5-7] Merits and Demerits of Single Electron Effects in Ultra-Small Semiconductor Devices

Akiko Ohata, Akira Toriumi (1.Frontier Research Program, The Institute of Physical and Chemical Research, 2.Advanced Semiconductor Device Research Laboratories, Toshiba Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] Device Physics Ferroelectric Thin Film Memories

J. F. Scott, A. J. Hartmann, K. Watanabe, A. Pignolet, N. D. Zakharov, M. Alexe, D. Hesse (1.School of Physics and Surface Science Laboratory, University of New South Wales, 2.Max Planck Institute for Microstructural Physics)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Low Voltage Operation of Ferroelectric Sr0.9Bi2.1Ta2O9 Thin Films Crystallized by Excimer Laser Annealing

Ichiro Koiwa, Kazuya Sano, Takao Kanehara, Hiroyo Kato (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., 2.Yokohama Plant, The Japan Steel Works, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] A Fatigue-Tolerant MFOS Structure with Large Memory Window of 3.6V Using Sr-Deficient and Bi-Excess SBTO Ferroelectric Film Prepared on SiO2/Si at Low Temperature by PLD Method

M. Noda, H. Sugiyama, Y. Matsumuro, M. Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of MFIS Structure

Takeshi KIJIMA, Hironori MATSUNAGA (1.Functional Devices Laboratories, SHARP Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download