[B-9-3] Two-Dimensional Numerical Simulation of Solid-Phase-Crystallized Polysilicon TFT Characteristics

Tsung-Kuan Chou, Jerzy Kanicki (1.Center for Display Technology and Manufacturing Department of Electrical Engineering and Computer Science, University of Michigan)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Function of Porous Silicon Diode as a Light-Emitting Bistable Memory

Koki Ueno, Nobuyoshi Koshida (1.Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] Porous Silicon Optical Waveguides with an Extremely High Contrast of Refractive Index

Morio Takahashi, Nobuyoshi Koshida (1.Department of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-9-6] Highly Sensitive MOSFET Gas Sensors with Porous Pt-SnOx Gate Electrode for CO Sensing Applications

Kouichirou Kasama, Daisuke Sato, Hisashi Fukuda, Shigeru Nomura (1.Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] A New Merged BiMOS Transistor in an SOI Structure

Yue-Sheng ZHENG, Tanemasa ASANO (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed

Byeong-Hoon Lee, Jung-Hoon Chun, Dae-Seok Byeon, Doo-Young Kim, Min-Koo Han, Yearn-Ik Choi (1.School of Electrical Eng., Seoul Nat'l Univ., 2.School of Electronics Eng., Ajou Univ.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Detection of Particles on Quarter um Thick or Thinner SOI Wafers

Susumu Kuwabara, Kiyoshi Mitani, Yasuo Yatsugake, Yuichiro Kato (1.Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 2.Hitachi Electronics Engineering Co., Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects

Kensuke Yamaguchi, Hideaki Onishi, Kiyotaka Imai, Shigetaka Kumashiro, Tadahiko Horiuchi (1.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] Theoretical Results on Dopability in Large Band Gap II-VI Semiconductors

D. J. Chadi (1.NEC Research Institute)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN

Doo-Hyeb Youn, Maosheng Hao, Yoshiki Naoi, Sourindra Mahanty, Kenji Yamashita, Tomoya Sugahara, Shiro Sakai (1.Department of Electrical and Electronic Engineering, The University of Tokushima, 2.Satellite Venture Business Laboratory, Nitride Photonic Semiconductor Laboratory of Tokushima University)

1998 International Conference on Solid State Devices and Materials |PDF Download