[D-7-7] Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs

Syunji Imanaga, Hiroji Kawai (1.Sony Corporation Research Center)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's

Hideo Ohno (1.Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] GaAs MISFET Based Memory with a Nanocomposite Gate

F. Sabri, D. G. Hasko (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Multiple Gated InAs Dot Ensembles

Guy Austing, Seigo Tarucha, Mohamed Henini, Simon Stoddart, Peter Main, Laurence Eaves (1.NTT Basic Research Laboratories, 2.Department of Physics, University of Nottingham)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] A New Approach for the Reliable Simulation of Resonant Tunnelling Diodes

Joan Garcia-Garcia, Ferran Martin, Xavier Oriols, Jordi Sune (1.Department d'Enginyeria Electronica Universitat Autonoma de Barcelona)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-5] Double-Quantum-Well Si1-xGex/Si Electron Resonant Tunneling Diode with a High Peak-to-Valley Ratio at RT

Hajime Koyama, Yoshiyuki Suda (1.Faculty of Technology, Tokyo University of Agriculture and Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-8-6] First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides

Masanori Sugiura, Kazuyuki Urago, Makoto Noda, Minoru Tachiki, Takeshi Kobayashi (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] φ400mm Large Diameter Wafer -Very High Flatness Polishing in the Nano-Technology Domain

K. TAKADA (1.Super Silicon Crystal Research Institute Corp.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Mechanism of Defect Formation during Low Temperature Si Epitaxy on Clean Si Substrate

I. Mizushima, M. Koike, T. Sato, K. Miyano, Y. Tsunashima (1.Microelectronics Engineering Laboratory, R&D Center Toshiba Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI

Kiyotaka MIYANO, Ichiro MIZUSHIMA, Kazuya OHUCHI, Akira HOKAZONO, Yoshitaka TSUNASHIMA (1.Process Eng. Lab., Device Eng. Lab., Microelectronics Eng. Lab., Toshiba corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

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