[A-5-4] Influence of Extension Formation Process on Indium Halo Profile

D. Onimatsu、K. Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] Manufacturable 0.13 μm DRAM Technology for 512M DDR DRAM

Yong-Hae Kim、Dae-Young Kim、Jae-Beom Park、Seung-Ho Yi、Byung-Seop Hong、Dong-Gyu Yim、Jun-Ki Kim、Jong-Moo Choi、Dong-Duk Lee、Gyu-Han Yoon (1.TG-1/P1 Memory Research Development Division, Hynix Semiconductor)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] A Technology for Suppressing Inter-Layer Dielectric Crack in a High Density DRAM

B. C. Kim、D. H. Kim、W. K Huh、M. K. Bae、J. W. Nam、S. C. Lee、J. S. Kim、T. K. Kim、Y. J. Park、J. S. Park、K. N. Kim (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-4] Advanced Retrograde Well Technology for 90-nm-node Embedded SRAM by High-Energy Parallel Beam

T. Yamashita、M. Kitazawa、Y. Kawasaki、H. Takashino、T. Kuroi、Y. Inoue、M. Inuishi (1.ULSI Development Center, Mitsubishi Electric Corporation)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-5] Source/Drain Dopant Deactivation and Junction Degradation by Energetic Ions in Plasma Processes

Yukio Tamai、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-6] New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide

Seong-Ho Kim、Sung-Hoan Kim、Sung-Eun Kim、Myung-Soo Kim、Joo-Han Park、Eun-Soo Kim (1.LDI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] High-Spacial-Resolution Microanalysis Using Micorcalorimeter EDS

S. W. Nam (1.NIST, USA)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] High-Resolution Stress Mapping of 100-nm Devices Measured by Stress TEM

Masanari Koguchi、Kuniyasu Nakamura、Kaoru Umemura (1.Central Research Laboratory, Hitachi Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] A Decoupled Capacitance Measurement Technique for Characterization of Small-Geometry MOSFETs with Ultra-Thin Gate Oxides

Chuan-Hsi Liu、Ming T. Lee、Yao-Chin Cheng、Jenkon Chen (1.United Microelectronics Corp.)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-4] Extraction of Interface State Density in Ultra-Thin Gate Dielectrics: A Composition Method of Ideal CV Curves in High-Frequency CV Analysis

Naoki Yasuda、Hideki Satake (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2001 International Conference on Solid State Devices and Materials |PDF ダウンロード

338件中(91 - 100)

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