[P8-11L] Demonstration of Enhanced Tunneling Magneto Resistance Ratio for a Magnetic Tunnel Junction Connected in Parallel with a Tunnel Diode

Tetsuya Uemura、Satoshi Honma、Takao Marukame、Masafumi Yamamoto (1.Division of Electronics and Information Engineering, Hokkaido University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-1] SOI SRAM / DRAM Cells for 0.5 Volt Operation

Mamoru Terauchi (1.Dept. of Computer Engineering, Fac. of Information Sciences, Hiroshima City University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-2] A Complete Surface-Potential-Based SOI-MOSFET Model for Circuit Simulation

D. Kitamaru、Y. Uetsuji、M. Miura-Mattausch (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-3] Complementary Operation of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension

Sumie Matsumoto、Mika Nishisaka、Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-4] A Workable Use of Floating-Body SOS MOSFET as a Transconductance Mixer

Sang Lam、Alain C.-K. Chan、Wai-Kit Lee、Philip K. T. Mok、Ping K. Ko、Mansun Chan (1.Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-5] Threshold Voltage Control on the Body-Tied FinFET (OMEGA MOSFET)

H. J. Jo、T. Park、J. D. Choe、S. Y. Han、J. H. Jeong、M. C. Chae、D. Park、K. Kim、E. Yoon、J.-H. Lee (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.、2.School of Materials Science and Engineering, Seoul National University、3.School of Electrical Engineering and Computer Science, Kyungpook National University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-6] High Performance Buried Gate Surrounding Gate Transistor (BG-SGT) for Future Three-Dimensional Devices

Makoto Iwai、Yasue Yamamoto、Ryohsuke Nishi、Hiroshi Sakuraba、Tetsuo Endoh、Fujio Masuoka (1.Research Institute of Electrical Communication, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-7] Thermal conductivity of high-integrity nanometer buried oxides by SIMOX

Yemin Dong、Xiang Wang、Jing Chen、Meng Chen、Xi Wang、Ping He、Lilin Tian、Zhijian Li (1.Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences、2.Shanghai Simgui Technology Co., Ltd.、3.Institute of Microelectronics, Tsinghua University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-8] Low-Frequency Noise in Partially-Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures

Kun-Ming Chen、Hsin-Hui Hu、Guo-Wei Huang、Shen-Yi Huang、A.S. Peng、Wen-Kuan Yeh、Chun-Yen Chang (1.National Nano Device Laboratories、2.Department of Electronics Engineering, National Chiao Tung University、3.Department of Electrical Engineering, National University of Kaohsiung)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P9-9L] Patterned SIMOX SOI materials with high degree of surface planarity and low defect density

Yemin Dong、Xi Wang、Meng Chen、Jing Chen、Xiang Wang、Wanbing Yi、Bo Jin、Enxia Zhang (1.Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS)、2.Shanghai Simgui Technology Co., Ltd.、3.TD Unit, Grate Semiconductor Manufacturing Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード