AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO2 Layer

Chun-Kai Wang, Shoou-Jinn Chang, Yan-Kuin Su, Yu-Zung Chiou, Cheng-Huang Kuo, Chia-Sheng Chang, Tien-Kun Lin, Tsun-Kai Ko, Jing-Jou Tang (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.Department of Electronics Engineering Southern Taiwan University of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO2 Layer

Y. Z. Chiou, C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, T. K. Lin, T. H. Fang, J. J. Tang (1.Department of Electronics Engineering, Southern Taiwan University of Technology, 2.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] Surface texturing for wafer-bonded GaN/mirror/Si light-emitting diodes

S. H. Huang, W. Y. Lin, D. S. Wuu, T. Y. Chen, R. H. Horng (1.Department of Materials Engineering, National Chung-Hsing University, 2.R&D Department, Advanced Epitaxy Technology Inc., 3.Institute of Precision Engineering, National Chung-Hsing University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films

Shiue-Lung Chen, Shui-Jinn Wang, Kai-Ming Uang, Chin-Kun Wu, Tron-Min Chen (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 2.Department of Electrical Engineering, Wu-Feng Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Nitride based Power Chip with ITO p-Contact and Al back-side Reflector

C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, H. M. Lo (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.South Epitaxy Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off

Fang-I Lai, Jung-Tang Chu, Chen-Fu Chu, Wen-Deng Liang, H.C. Kuo, S. C. Wang (1.Institute of Electro-Optical Engineering, National Chiao Tung University, 2.Highlink Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-7-5] High brightness InGaN/GaN blue LED realized by a 2"×6 MOCVD system

Jin-Woo Ju, Kwang-Su Ryu, A. S. Fedorov, Cheul-Ro Lee, In-Hwan Lee, Ki Ho Park, Young Hee Lee (1.School of Advanced Materials Engineering, Engineering College, Chonbuk National University, 2.Sysnex Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Low-dislocation AlGaN thin films grown using Al1-xSixN nano-disks (x= 0.07-0.17)

Tetsuya Akasaka, Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)

Kyong-Jun Kim, In-Seok Seo, Cheul-Ro Lee (1.RCAMD, Research Center of Advanced Materials Department, School of Advanced Materials Engineering, Engineering College, Chonbuk National Universitｙ)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates

Taketomo Sato, Takeshi Oikawa, Tamotsu Hashizume, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

2004 International Conference on Solid State Devices and Materials |PDF Download