[P2-4] Understanding the Impact of Process Variations on Analog Circuit Performance with Halo Channel Doped Deep Sub-Micron CMOS Technologies

K. Narasimhulu, V. Ramgopal Rao (1.Department of Electrical Engineering, Indian Institute of Technology Bombay)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-5] Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing

Akira Mineji, Koji Yamashita, Fumio Ootsuka, Mitsuo Yasuhira, Tsunetoshi Arikado (1.Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-6] Strain Dependence of Mobility Enhancement in Local Strain Channel nMOSFETs

Tsung Yi Lu, Tien Sheng Chao (1.Department of Electrophysics, National Chiao Tung University, 2.National Nano Device Labs)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-7] Effects of Gate Oxide Scaling and Gate Leakage Currents on Sample and Hold Circuits

M. Gupta, J. Woo (1.Department of Electrical Engineering, UCLA)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-8] Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance

Kenji Kimoto, Tetsuya Tada, Toshihiko Kanayama (1.MIRAI-ASET, AIST Tsukuba Central 4, 2.MIRAI-ASRC, AIST Tsukuba, West 7)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-9] Evaluations of Scaling Properties for GOI MOSFETs in Nano-Scale

G. Du, X.Y Liu, Z.L. Xia, Y.K Wang, D.Q. Hou, J.F. Kang, R.Q. Han (1.Institute of Microelectronics, Peking University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-10] Low frequency noise by mobility and number fluctuations in MOS structures

S. Hamayosi, T. Nakamoto, M. Wada, K. Higuchi (1.Graduate School of Advanced Sciences of Matter)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-11] Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology

Kwang-Seng See, Wai-Shing Lau, Hong Liao, Jae Gon Lee, Elgin Kiok-Boone Quek, Kheng-Chok Tee, Lap-Hung Chan (1.School of Electrical and Electronic Engineering, Nanyang Technological University, 2.Department of Technology Development, Chartered Semiconductor Manufacturing Ltd)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-12] RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks

Angelica Lee, Andrew R. Brown, Asen Asenov, Scott Roy (1.Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P2-13] 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric

H. Ohji, K. Torii, T. Kawahara, T. Maeda, H. Itoh, A. Mutoh, R. Mitsuhashi, A. Horiuchi, H. Kitajima, F. Ootsuka, M. Yasuhira, T. Arikado (1.Semiconductor Leading Edge Technologies, Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download