[P10-6] Distribution and Impact of Local Trapped Charges in SONOS Memory

Lei Sun, Liyang Pan, Ying Zeng, Huiqing Pang, Jimin Wang, Zhaojian Zhang, Xiyou Li, Jun Zhu (1.Institute of Microelectronics, Tsinghua University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P10-7] High Pressure H2/D2 Annealed SONOS Nonvolatile Memory Devices

Sangmoo Choi, Man Jang, Hokyung Park, Sanghun Jeon, Juhyung Kim, Chungwoo Kim, Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 2.MD laboratory, Samsung Advanced Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P10-8] Low Voltage and High Speed Efficient Flash Using Band-to-Band Tunneling Induced Substrate Hot Electron Injection (BBISHE) to Perform Programming

Meng-Yi Wu, Kung-Hong Lee, Sen-Hue Dai, Shu-Fen Hu, Ya-Chin King (1.Micro electronic Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, 2.National Nano Device Laboratory (NDL))

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-1] Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer

Chengxin WANG, Narihiko MAEDA, Masanobu HIROKI, Takehiko TAWARA, Tadashi SAITOH, Toshiki MAKIMOTO, Takashi KOBAYASHI, Takotomo ENOKI (1.NTT Photonics Laboratories, NTT Corporation, 2.NTT Basic Research Laboratories, NTT Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-2] The low-k BCB passivation layer on the GaN HEMTs

Wen-Kai Wang, Ching-Huao Lin, Po-Chen Lin, Cheng-Kuo Lin, Fan-Hsiu Huang, Yi-Jen Chan, Guan-Ting Chen, Jen-Inn Chyi (1.Department of Electrical Engineering, National Central University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-3] A new CML-type RTD/HBT Non-inverted/Inverted MOnostable-BIstable transition Logic Element (MOBILE) IC

Taeho Kim, Sunkyu Choi, Bangkeun Lee, Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST))

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-4] Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions

Jin-Cherl Her, Kang-Min Lee, Seung-Chul Lee, Min-Koo Han, Jae-Eung Oh, Kwang-Seok Seo (1.Seoul Nat’l Univ., EECS/EE., 2.Hanyang Univ. EECS/EE)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-5] Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application

Abdul Manaf Hashim, Mariko Takeuchi, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-6L] Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon

S. ARULKUMARAN, T. EGAWA, H. ISHIKAWA (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P11-7L] Design and Fabrication of Packaged Wideband Transimpedance Amplifier by using InGaAs/InP HBT Technology

Jong-Min Lee, Seong-Il Kim, Byoung-Gue Min, Cheol-Won Ju, Kyung-Ho Lee (1.InP IC Team, Basic Research Laboratory, 2.Electronics and Telecommunications Research Institute)

2004 International Conference on Solid State Devices and Materials |PDF Download