[P3-13] The mechanical properties of hydrophobic nanoporous silica low-k films investigated by utilizing X-ray reflectivity technology

C. W. Yen, A. T. Cho, H. Y. Hwang, F. M. Pan, J. Y. Chen, K. J. Chao (1.National Nano Device Laboratories, 2.Department of Chemistry, National Tsinghua University, 3.Department of Materials Science and Engineering, National Chiao Tung University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-14] Theoretical Study of Chemical Mechanical Polishing of SiO2 Surface

Arivazhagan Rajendran, Yasufumi Takahashi, Hideyuki Tsuboi, Michihisa Koyama, Momoji Kubo, Akira Miyamoto (1.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 2.JST-PRESTO, 3.New Industry Creation Hatchery Center, Tohoku University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-15] Optimization Technique of Number of Interconnect Layers and Circuit Area Based on Wire Length Distribution

Takanori Kyogoku, Junpei Inoue, Hidenari Nakashima, Kenichi Okada, Kazuya Masu (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-16] Raised Source/Drain on Different Integration Schemes for Sub-micro CMOS

Ellen Cheng, Yi-Ying Chiang, Yi-Chia Lee (1.United Microelectronics Corporation (UMC), Central R&D Division)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-17] Depth Profile Prediction on Low Energy Boron Implantation Process by Tight-Binding Quantum Chemical Molecular Dynamics

Hideyuki Tsuboi, Ai Sagawa, Hideki Iga, Katsumi Sasata, Michihisa Koyama, Momoji Kubo, Hidehiko Yabuhara, Akira Miyamoto (1.New Industry Creation Hatchery Center, Tohoku University, 2.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 3.PRESTO, Japan Science and Technology Agency, 4.Corporate Manufacturing Engineering Center, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-18] Design and Fabrication of MOS Device Circuits with Reticle-Free Exposure Method

Katsuhiko Wakasugi, Satoshi Wakimoto, Akira Nakada, Ichiro Ohshima, Hiroshi Kubota, Kazumitsu Nakamura (1.Graduate School of Science and Technology, Kumamoto University, 2.Kumamoto Technology and Industry Foundation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-19] Molecular Dynamics (MD) Calculation for Low-energy Ion Implantation Process with Dynamic Annealing Effect

Ohseob Kwon, Jihyun Seo, Kidong Kim, Taeyoung Won (1.National IT Research Center for Computational Electronics and Department of Electrical Engineering, School of Electrical and Computer Engineering, Inha University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-20] Impact of Metal Gate/High-k Interface in Mo Metal Gated MOSFETs with HfO2 Gate Dielectrics

Takayuki Aoyama, Yasuo Nara (1.FUJITSU LABORATORIES LTD.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-21L] Electrical characteristics of crystalline HfO2 high-κ dielectric films deposited on crystalline γ-Al2O3 films

Takayuki Okada, Mohammad Shahjahan, Kazuaki Sawada, Makoto Ishida (1.Toyohashi University of Technology, Department of Electrical and Electronic Engineering, 2.Rajshahi University, Department of Physics)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-22L] Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface

Hideaki Fujiwara, Masaru Kadoshima, Koji Akiyama, Nobuyuki Mise, Shinji Migita, Hiroyuki Ota, Morifumi Ohno, Toshihide Nabatame, Tsuyoshi Horikawa, Akira Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7, 2.MIRAI-ASRC, AIST Tsukuba, West 7, 3.Dept. of Materials Science, Univ. of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download