[C-10-3] Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO2

Minoru Ikeda, Georg Kresse, Toshihide Nabatame, Akira Toriumi (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.Institut fur Materialphysik, Univeisitat Wien, 3.MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technologies (AIST), 4.Department of Materials Science School of Engineering, University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Preparation of Novel PZTN Thin Film Co-doped Si

Takeshi Kijima, Yasuaki Hamada, Taku Aoyama, Eiji Natori, Tatsuya Shimoda (1.SEIKO EPSON Corporation, Technology Platform Research Center)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] 30-day-long Data Retention in Ferroelectric-gate FETs with HfO2 Buffer Layers

Kazuhiro Takahashi, Byung-Eun Park, Koji Aizawa, Hiroshi Ishiwara (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2.Department of Electrical and Computer Engineering, University of Seoul, 3.Precision & Intelligence Laboratory, Tokyo Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array

Hyun-Soo Kim, Shuu’ichirou Yamamoto, Toru Ishikawa, Hiroshi Ishiwara (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2.R&D Association for Future Electron Devices)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] Robust 3-Metallization BEOL Process for 0.18 μm Embedded FRAM

S.K. Kang, H.S. Rhie, H.H. Kim, B.J. Koo, H.J. Joo, J.H. Park, Y.M. Kang, D.Y. Choi, S.Y. Lee, Kinam Kim (1.Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Impact of the Grain Size and Orientation of SrBi2(Ta,Nb)2O9 Films on the Polarization for Nano-Scale FeRAMs

K. Kaibara, K. Tanaka, K. Uchiyama, Y. Shimada (1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] Recent Development in Phase Change Memory

Roberto Bez (1.Non Volatile Memory Technology Development, Central R&D, STMicroelectronics)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Programming Characteristics of PRAM

Y.-T. Kim, Y.-N. Hwang, K.-H. Lee, S.-H. Lee, C.-W. Jeong, S.-J. Ahn, F. Yeung, G.-H. Koh, H.-S. Jeong, W.-Y. Chung, T.-K. Kim, Y.-K. Park, K.-N. Kim, J.-T. Kong (1.CAE Team, 2.Advanced Technology Development, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] GST Confined Structure and Integration of 64Mb PRAM

F. Yeung, S.J. Ahn, Y.N. Hwang, C.W. Jeong, Y.J. Song, S.Y. Lee, S.H. Lee, K.C. Ryoo, J.H. Park, J.M. Shin, E.Y. Lee, W.C. Jeong, Y.T. Kim, K.H. Koh, G.T. Jeong, H.S. Jeong, K.N. Kim (1.Advanced Technology Development, 2.CAE Team, Semiconductor R&D Centre, Samsung Electronics Co. Ltd)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Thermally Stable Magnetic Tunnel Junctions for High Density MRAM

S. Ikegawa, N. Ishiwata, M. Nagamine, T. Nagase, K. Nishiyama, H. Katsumata, T. Mitsuzuka, N. Ooshima, H. Honjo, T. Ueda, T. Kishi, Y. Asao, K. Tsuchida, H. Hada, T. Sugibayashi, S. Tahara, H. Yoda (1.Corporate Research & Development Center, Toshiba Corporation, 2.System Devices Research Laboratories, NEC Corporation, 3.Corporate Manufacturing Engineering Center, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download