[P4-10L] Modeling Geometry-Dependent Floating-Body Effect using Body-Source Built-In Potential Lowering for Scaled SOI CMOS

Pin Su, Wei Lee (1.Department of Electronics Engineering, National Chiao Tung University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-1] Mobility Enhancement of MOSFETs on p-Silicon (111) with In-situ HF-Vapor Pre-Gate Oxide Cleaning

T. S. Chao, Y. H. Lin, W. L. Yang (1.Department of Electrophysics, National Chiao Tung University, 2.National Nano Device Labs, 3.Department of Electrical Engineering, Feng Chia University, 4.Department of Electronic Engineering, Feng Chia University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-2] Characterization of Pore Size Distributions in Ultralow-k Films

N. Hata, N. Fujii, H. Miyoshi, X. Li, T. Kikkawa (1.MIRAI-ASRC, AIST, 2.ASRC, AIST, 3.MIRAI-ASET, 4.RCNS, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-3] Low-Temperature Formation of Poly-Si1-xGex (x: 0-1) on SiO2 by Au-Mediated Lateral Crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao (1.Kyushu University, Department of Electronics)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-4] Transient charging and relaxation in high-k gate dielectrics and its implications

Byoung Hun Lee, Chadwin Young, Rino Choi, Jang Hoan Sim, George Brown, Gennadi Bersuker (1.International SEMATECH, 2.IBM)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-5] Analysis of dislocations in strained-Si/SiGe devices by EBIC technique

Yoshihiro Anan, Nobuyuki Sugii, Yoshinobu Kimura, Mari Nozoe (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi High-Technologies Corpration)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-6] Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si1-xGex according to Different Ge Fractions (x)

Jang-Gn Yun, Soon-Young Oh, Bin-Feng Huang, Yong-Jin Kim, Hee-Hwan Ji, Yong-Goo Kim, Yeong-Cheol Kim, Seong-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Hu, Jeong-Gun Lee, Hi-Deok Lee (1.Dept. of Electronics Engineering, Chungnam National University, 2.Dept. of Materials Engineering, Korea University of Technology and Education, 3.System IC R&D Division, Hynix Semiconductor Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-7] Depth Profiling of Si/Si1-xGex Structures by Micro-Raman Imaging

Takeshi Mitani, Shinichi Nakashima, Hajime Okumura, Atsushi Ogura (1.National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, 2.Meiji University, School of Science and Engineering)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-8] Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima (1.Art, Science and Technology Center for Cooperative Research, Kyushu University, 2.Sumitomo Mitsubishi Silicon Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-9] Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films

Ryota Fujitsuka, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima, Yukio Yasuda (1.Graduate School of Engineering, Nagoya University)

2004 International Conference on Solid State Devices and Materials |PDF Download