[D-10-4] Preparation and Characterization of ZnO and (Zn,Mg)O films doped with Al

Haruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi, Tadashi Takenaka, Hajime Haneda (1.Advanced Materials Laboratory, National Institute for Materials Science, 2.Department of Applied Science for Electronics & Materials, Kyushu University, 3.Department of Science and Technology, Tokyo University of Science)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-10-5] Domain configuration in Sn2P2S6 ferroelectrics-semiconductors

Diana Kaynts, Andrew Horvat, Alexander Grabar, Ivan Stoika, Mikhail Gurzan (1.Institute for Solid State Physics and Chemistry of Uzhgorod National University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-1-1] Nanoelectronic Scaling Tradeoffs: What does Materials Physics have to say?

Victor Zhirnov, Ralph Cavin (1.Semiconductor Research Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-1-2] Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)

M. Masahara, S. Hosokawa, T. Matsukawa, K. Endo, Y. Naitou, H. Tanoue, E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-1-3] Study of LGATE dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy

Hidenobu Fukutome, Takayuki Aoyama, Hiroshi Arimoto (1.FUJITSU LABORATORIES LTD., Silicon technologies laboratories, Advanced CMOS technology lab., 2.FUJITSU LTD., Advanced LSI development div.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] Simple Models on Enhancement of Mechanical Properties of Porous Silica Low-k Films by Tetramethylcyclotetrasiloxane(TMCTS) Vapor Annealing Treatment

Yutaka Seino, Rie Ichikawa, Yuko Takasu, Kazuo Kohmura, Hirofumi Tanaka, Shunsuke Oike, Masami Murakami, Takamaro Kikkawa (1.MIRAI, Advanced Semiconductor Research Center, 2.Advanced Semiconductor Research Center, AIST, 3.MIRAI, Association of Super-Advanced Electronics Technologies, 4.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-1-5] Microstructure Characterization of Skeletal Silica in Porous Low-k Films by Infrared Spectroscopic Ellipsometry

Syozo Takada, Nobuhiro Hata, Yutaka Seino, Nobutoshi Fujii, Takamaro Kikkawa (1.ASRC, AIST, 2.MIRAI-ASRC, AIST, 3.MIRAI-ASET, 4.RCNS, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Reliability Issues in High-k Stacks

R. Degraeve, F. Crupi, M. Houssa, D. H. Kwak, A. Kerber, E. Cartier, T. Kauerauf, Ph. Roussel, J.L. Autran, G. Pourtois, L. Pantisano, S. De Gendt, M.M. Heyns, G. Groeseneken (1.IMEC, 2.University of Calabria, Italy, 3.Samsung Electronics c/o IMEC, 4.Infineon Technologies, Germany, 5.IBM, USA, 6.Catholic University Leuven, Belgium, 7.University of Provence, France)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] Influences of Traps within HfSiON Bulk on Positive- and Negative- Bias Temperature Instability of HfSiON Gate Stacks

Shinji Fujieda, Setsu Kotsuji, Ayuka Morioka, Masayuki Terai, Motofumi Saitoh (1.System Devices Research Laboratories, NEC Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO2 CMOSFETs

Masayuki Terai, Yuko Yabe, Hirohito Watanabe, Shinji Fujieda, Ayuka Morioka, Setsu Kotsuji, Toshiyuki Iwamoto, Motofumi Saitoh, Takashi Ogura, Yukishige Saito (1.System Devices Research Laboratories, NEC Corp.)

2004 International Conference on Solid State Devices and Materials |PDF Download