The Japan Society of Applied Physics

473件中(121 - 130)

[D-4-2] A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology

Yong Kyu Lee、Byung Yong Choi、Jae Sung Sim、Ki Whan Song、Jong Duk Lee、Byung-Gook Park、Donggun Park、Chilhee Chung (1.Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University、2.C&M, System LSI and、3.Device Research Team, R&D Center, Samsung Electronics Co.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-3] Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide

Chao-Wei Kuo、Cheng-Tung Huang、Jih-Wen Chou、Shyang-Ming Tzeng、Chia-Ping Lai、Tzeng-Wen Tzeng、Chi-Lun Liu、Yih-En Huang、Wei-Zhe Wong、Hsiang-Chung Chang、Ching-Sung Yang、Saysamone Pittikoun、Chih-Hsun Chu、Chih-Chen Cho (1.Powerchip Semiconductor Corporation、2.Ememory Technology Incorporation)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

473件中(121 - 130)