[F-1-4] A Piezoelectric ZnO Film Prepared by RF Magnetron Sputtering

Day-Shan Liu, Cheng-Hsien Li, Cheng-Yang Wu, Ching-Ting Lee (1.Institute of Electro-Optical and Materials Science, National Formosa University, 2.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-1-5] Studies on the Nature of Deep Level Defects in GaCrN Diluted Magnetic Semiconductor

S. Shanthi, S. Kimura, S. Kobayashi, M. S. Kim, Y. K. Zhou, H. Hasegawa, H. Asahi (1.The Institute of Scientific and Industrial Research, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-1-6] Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures

Moo Seong Kim, Yi Kai Zhou, Shuichi Emura, Shigehiko Hasegawa, Hajime Asahi (1.The Institute of Scientific and Industrial Research, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-1-7] Controlled Growth of High Quality and Surface-Clean Multicomponent Thin Films for Nanoelectronics Applications by Using Substrates with Artificial Steps

Kazuhiro Endo, Petre Badica, Hiroshi Sato, Hiroshi Akoh (1.Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 2.Institute for Materials Research, Tohoku Univ., 3.National Institute of Materials Physics, Bucharest, 4.Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-1] Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy

Yasuyuki Kobayashi, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-2] Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-3] First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell

Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka, Takashi Egawa (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial, Co. Ltd., 2.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-4] InGaN quantum wells with small potential fluctuation

Tetsuya Akasaka, Hideki Gotoh, Hidetoshi Nakano, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5] Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPE

W. C. Chen, Y. K. Su, R. W. Chuang, S. H. Hsu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-6] Growth and characteristics of GaNAs/GaAs MQW by molecular beam epitaxy

Katsuhiro Takao, Kensuke Fujii, Hayato Miyagawa, Noriaki Tsurumachi, Hiroshi Itoh, Naoto Sumida, Shunsuke Nakanishi, Hidefumi Akiyama, Shun koshiba (1.Faculty of Engineering, Kagawa University, 2.Institute for Solid State Physics, University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download