[G-2-2] Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain

Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-3] Multifunctional device by using a quantum dot array

Takuya Kaizawa, Takatsugu Oya, Masashi Arita, Yasuo Takahashi (1.Graduate School of Information Science and Technology, Hokkaido Univ.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-4] Multi-Charge Turnstile Operation in Random-Multidot Channel FET

Hiroya Ikeda, Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-5] Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices

Yasuhiko Ishikawa, Chihiro Yamamoto, Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-6] Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, S. Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-7] Studies on MOSFET Low-Frequency Noise for Electrometer Applications

Nicolas Clement, Hiroshi Inokawa, Yukinori Ono (1.NTT Basic Research Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-8] Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures

D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, M. Tabe (1.Research Institute of Electronics, Shizuoka University, 2.Department of Electric and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-2-9L] Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot

Akhmadi Surawijaya, Hiroshi Mizuta, Shunri Oda (1.Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2.SORST-JST (Japan Science and Technology))

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-3-1] Probing Charge and Spin Excitations in Quantum Dots and Molecules

J. J. Finley, H. J. Krenner, E. Clark, M. Kroutvar, D. Heiss, S. Schack, M. Bichler, G. Abstreiter (1.Walter Schottky Institut, Technische Universitat)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-3-2] Pulse Area Control of the Exciton Rabi Oscillation in InAs/GaAs Single Quantum Dot

K. Goshima, K. Komori, S. Yamauchi, I. Morohashi, A. Shikanai, T. Sugaya (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST, Japan Science and Technology Agency (JST))

2005 International Conference on Solid State Devices and Materials |PDF Download

533 results (241 - 250)

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