[A-2-6] Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Motoyuki SATO, Tomonori AOYAMA, Katsuyuki SEKINE, Takeshi YAMAGUCHI, Izumi HIRANO, Kazuhiro EGUCHI, Yoshitaka TSUNASHIMA (1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation, 2.Research & Development Center, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Dielectric Constant Behavior of Hf-O-N System

Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Masato Koyama, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Permittivity Enhancement of Hf(1-x)SixO2 Film with High Temperature Annealing

Kazuyuki Tomida, Koji Kita, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Thermal Stability Improvements for HfO2 by Fluorine Implantation

Chao Sung Lai, Woei Cherng Wu, Jer Chyi Wang, Tian Sheng Chao (1.Department of Electronic Engineering, Chang Gung University, 2.Department of Electronic Physics, National Chiao Tung University, 3.Nanya Technology Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Nanoscale Observations for Degradation Phenomena in SiO2 and High－k Gate lnsulators Using Conductive－Atomic Force Microscopy

Shigeaki Zaima, Akiyoshi Seko, Yukihiko Watanabe, Toshifumi Sago, Mitsuo Sakashita, Hiroki Kondo, Akira Sakai, Masaki Ogawa (1.Graduate School of Engineering, Nagoya University, 2.Toyota Central R＆D Labs., Inc., 3.Center for Cooperative Research in Advanced Science＆Technology, Nagoya University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors

Rino Choi, B. H. Lee, H. K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker (1.SEMATECH, 2.IBM assignee, 3.Gwanju Institute of Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy

Li Zhang, Yuichiro Mitani (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH3 Plasma and Ultra-violet Rays

Jer Chyi Wang, Woei Cherng Wu, Chao Sung Lai, Jam Wem Lee, Kuo Cheng Chiang, De Ching Shie, Tan Fu Lei, Chung Len Lee (1.Nanya Technology Corporation, 2.Department of Electronic Physics, National Chiao Tung University, 3.Department of Electronics Engineering, Chang Gung University, 4.National Nano Device Laboratories, 5.Department of Electronics Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, Keisaku Yamada (1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2.Semiconductor Leading Edge Technologies, Inc., 3.Nanotechnology Research Laboratories, Waseda University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Local Current Leakage Characterization in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy

Akiyoshi Seko, Toshifumi Sago, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (1.Graduate School of Engineering, Nagoya University, 2.Center for Cooperative Research in Advanced Science & Technology, Nagoya University)

2005 International Conference on Solid State Devices and Materials |PDF Download