[P3-2] Characterization of Embedded Poly-Heater PMOSFETs and its Application on In-Line Wafer Level NBTI Monitor

C. S. Wang, W. C. Chang, W. S. Ke, C. T. Chiang, C. F. Lee, K. C. Su, M. J. Chen (1.Quality and Reliability Assurance Div., United Microelectronics Corp., 2.Department of Electronics Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-3] DC Hot Carrier Reliability at Elevated Temperatures for nMOSFETs Using 0.13μm Technology

J. C. Lin, S. Y. Chen, H. W. Chen, Z. W. Jhou, H. C. Lin, S. Chou, J. Ko, T. F. Lei, H. S. Haung (1.Special Technology Division, United Microelectronics Corporation, 2.Institute of Mechatronics Engineering, National Taipei University of Technology, 3.Department of Electronics Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-4] The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs

Chieh-Ming Lai, Chien-Ting Lin, Yean-Kuen Fang, Wen-Kuan Yeh, Jia-Wei Syu, W. T. Shiau (1.Institute of Microelectronics, National Cheng Kung University, 2.Department of Electrical Engineering, National University of Kaohsiung, 3.United Microelectronics Corporation, Central R&D Division)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-5] Investigation of Accumulation-mode Vertical Double-gate MOSFET

M. Masahara, K. Endo, Y.-X. Liu, T. Matsukawa, S. O’uchi, K. Ishii, H. Takashima, E. Sugimata, E. Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-6] Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method

Mungi Park, Hoon Choi, Jicheol Bea, Takafumi Fukushima, Mitsumasa Koyanagi (1.Department of Bioengineering and Robotics, Tohoku University, 2.Mobile Display R&D Team, LCD Business, Samsung Electronics Co. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-7] Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact

In-Hwan Ji, Young-Hwan Choi, Soo-Seong Kim, Yearn-Ik Choi, Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-8] Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures

Shigeyasu Uno, Henok Abebe, Ellis Cumberbatch (1.School of Mathematical Sciences, Claremont Graduate University, 2.MOSIS Service, Information Sciences Institute, University of Southern California)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-9] Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors

Yiming Li, Shao-Ming Yu, Ching-Feng Hsiao (1.Department of Communication Engineering, National Chiao Tung University, 2.Microelectronics and Information Systems Research Center, National Chiao Tung University, 3.Department of Computer and Information Science, National Chiao Tung University, 4.Institute of Statistics, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-10] Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling

B. Cheng, S. Roy, A. Martinez, S. Markov, A. Asenov (1.Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P3-11] Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Y. X. Liu, E. Sugimata, K. Ishii, M. Masahara, K. Endo, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

2005 International Conference on Solid State Devices and Materials |PDF Download