[G-5-3] Temperature dependence of Space Charge Limited Current (SCLC) in thin films of silicon nanocrystals

M. A. Rafiq, Y. Tsuchiya, H. Mizuta, Shigeyasu Uno, Z. A. K. Durrani, W. I. Milne (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, 2.Department of Physical Electronics, Tokyo Institute of Technology, and, 3.SORST JST (Japan Science and Technology)., 4.Hitachi Cambridge Laboratory, 5.Electronic Devices and Materials Group, Engineering Department, University of Cambridge CB2 1PZ, U. K., and SORST JST (Japan Science and Technology))

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-5-4] Temperature dependent characteristics of diamond MESFET

H. Ye, M. Kasu, Y. Yamauchi, N. Maeda, S. Sasaki, T Makimoto (1.NTT Basic Research Laboratories, 2.NTT Photonics Laboratories NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-5-5] High frequency gate bias response of carbon nanotube field effect transistor

Su Heon Hong, Hee Tae Kim, Hyung Kwon Kim, Myung Gil Kang, Jong Seoung Hwang, Gyu Tae Kim, Sung Woo Hwang, Doyeol Ahn (1.Department of Electronics and Computer Engineering, Korea University, 2.Institute of Quantum Information Processing and Systems, University of Seoul, 3.Department of Electrical Engineering, Korea University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-5-6] Phonon Limited Electron Transport In SoI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves

Shigeyasu Uno, Nobuya Mori (1.School of Mathematical Sciences, Claremont Graduate University, 2.Department of Electronic Engineering, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-6-1] Spin Hall effect in a two dimensional spin-orbit coupled semiconductor system

Joerg Wunderlich, Bernd Kaestner, K. Nomura, Jairo Sinova, Allan H. MacDonald, Tomas Jungwirth (1.Hitachi Cambridge Laboratory, 2.National Physical Laboratory, 3.Department of Physics, University of Texas at Austin, 4.Department of Physics, Texas A&M University, 5.Institute of Physics ASCR, 6.University of Nottingham)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-6-2] Velocity Measurements of Magnetic Domain Wall by Local Hall Effect

Yoshiaki Sekine, Junsaku Nitta (1.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 2.CREST, Japan Science and Technology Agency)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-6-3] Magnetic and Microstructural Properties of FePt L10 Nanoparticle Films Fabricated by Self-Assembled Deposition Method

J. C. Bea, C.-K. Yin, M. Nishijima, T. Fukushima, T. Sadoh, M. Miyao, M. Koyanagi (1.Japan Science and Technology Agency (JST), 2.Dept. of Bioengineering and Robotics, Tohoku University, 3.Institute for Materials Resarch, Tohoku University, 4.Dept. of Electronics, Kyushu University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-7-1] Revolution in Carbon Nanotube Synthesis-“Super Growth”

Don N. Futaba, Kenji Hata, Kohei Mizuno, Takeo Yamada, Tatsunori Namai, Yuhei Hayamizu, Motoo Yumura, Sumio Iijima (1.Japan Fine Ceramics Center, National Institute of Advanced Industrial Science and Technology (AIST), 2.Research Center for Advanced Carbon Materials, National Institute of Advances Industrial Science and Technology (AIST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-7-2] Single Walled Carbon Nanotubes Grown by Chemical Vapour Deposition: Structures and Devices for Transport and Optics

D. G. Austing, P. Finnie, J. Lefebvre (1.Institute for Microstructural Sciences, National Research Council of Canada)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-7-3] Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiNx Passivation Films Formed by Catalytic Chemical Vapor Deposition

Daisuke Kaminishi, Hirokazu Ozaki, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhiro Seri, Atsushi Masuda, Hideki Matsumura, Toshikazu Niki (1.The Intitute of Scientific and Industrial Research, Osaka University, 2.Japan Advanced Institute of Science and Technology, 3.Ishikawa Seisakusho, Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download