[I-7-4] Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs

Takashi Shugo, Dumarpa Macarambon Jr., Masaaki Kuzuhara (1.Department of Electrical and Electronics Engineering University of Fukui)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-8-1] Analysis of Trap-Parameter Dependence of Lag Phenomena and Current Collapse in GaN FETs

H. Takayanagi, H. Nakano, K. Itagaki, K. Horio (1.Faculty of Systems Engineering, Shibaura Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-8-2] Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model

Dong-Ming Lin, Fan-Hsiu Hang, Meng-wei Hsieh, Hsin-Pin Wang, Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[I-8-3] Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Region

Chun-Kai Wang, Shoou-Jinn Chang, Yan-Kuin Su, Yu-Zung Chiou, Tien-Kun Lin, Tsun-Kai Ko, Hsin-Liang Liu, Jing-Jou Tang (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.Department of Electronics Engineering Southern Taiwan University of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-1] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate

Hiroyoshi Momida, Tomoyuki Hamada, Takenori Yamamoto, Tsuyoshi Uda, Naoto Umezawa, Kenji Shiraishi, Toyohiro Chikyow, Takahisa Ohno (1.Institute of Industrial Science, University of Tokyo, 2.AdvanceSoft Corporation, 3.National Institute for Materials Science, 4.Institute of Physics, University of Tsukuba)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-2] Effect of SiO2 Underneath Layer on LaAlO3 High Dielectric Constant Material for Gate Oxide Application

Musarrat Hasan, Hyunsang Hwang (1.Materials Science and Engineering, Gwangju Institute of Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-3] Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation

Takashi Yamamoto, Yukiko Izumi, Takashi Miyamoto, Hirohumi Seki, Hideki Hashimoto, Minoru Inoue, Masanori Oosawa, Satoshi Hasaka, Yoshihiro Sugita, Kazuto Ikeda (1.Toray Research Center, Inc., 2.TAIYO NIPPON SANSO CORPORATION, 3.Fujitsu Laboratories Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-4] Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks

M.A. Quevedo-Lopez, S. A. Krishnan, P.D. Kirsch, J. Peterson, H.-J Li, M. Kim, C. Huffman (1.SEMATECH, 2.Texas Instruments, 3.IBM, 4.Infineon, 5.University of Texas at Dallas)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-5] A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric

Bing-Yue Tsui, Yun-Pei Huang, Feng-Chiu Hsieh, Wei-Hao Wu (1.Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 2.National Nano Device Laboratories)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-6] Threshold Voltage Instability in nMOSFETs with HfSiO/SiO2 High-k Gate Stacks

Wei-Hao Wu, Yong-Tian Hou, Yin Jin, Hun-Jan Tao, Shih-Chang Chen, Mong-Song Liang, Bing-Yue Tsui, Mao-Chieh Chen (1.Department of Electronics Engineering, National Chiao Tung University, 2.Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company)

2005 International Conference on Solid State Devices and Materials |PDF Download