[G-7-4] Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition

Lorraine Rispal, Yordan Stefanov, Rudolf Heller, Gerhard Tzschockel, Gisela Hess, Klaus Haberle, Udo Schwalke (1.Institute for Semiconductor Technology, Darmstadt University of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-7-5] Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV

Takafumi Kamimura, Kazuhiro Yamamoto, Kazuhiko Matsumoto (1.Osaka University, 2.CREST/JST, 3.National Institute of Advanced Industrial Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Electronic and Structural Properties of Organic Molecules inside Carbon Nanotube

Rodion V. Belosludov, Hiroshi Mizuseki, T. Takenobu, Y. Iwasa, Yoshiyuki Kawazoe (1.Institute for Materials Research, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-8-3] Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors

Kenzo Maehashi, Kazuhiko Matsumoto, Kagan Kerman, Yuzuru Takamura, Eiichi Tamiya (1.The Intitute of Scientific and Industrial Research, Osaka University, 2.School of Materials Science, Japan Advanced Institute of Sciencde and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-8-4] Development of an Ultrasensitive Gas Sensor Based on Single-Walled Carbon Nanotubes

Winadda Wongwiriyapan, Shin-ichi Honda, Hirofumi Konishi, Tomoaki Mizuta, Takafumi Ohmori, Tatsuya Ito, Toru Maekawa, Kengo Suzuki, Hiroshi Ishikawa, Toshiya Murakami, Kenji Kisoda, Hiroshi Harima, Kenjiro Oura, Mitsuhiro Katayama (1.Osaka Univ., Grad. Sch. of Eng., Dept. of Electronic Eng, 2.New Cosmos Electric Co., Ltd., 3.Kyoto Inst. of Technol., Fac. of Eng. & Des., Dept. of Electronics & Information Sci., 4.Wakayama Univ., Fac. of Edu., 5.Osaka Univ., Res. Center for Ultrahigh Voltage Electron Microscopy)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-8-5] Precise Control of Island Size for Carbon Nanotube Single Electron Transistor operating at Room Temperature by AFM Electrical Manipulation

C. K. Hyon, T. Kamimura, M. Maeda, K. Matsumoto (1.Core Research for Evolutional Science and Technology, CREST/JST, 2.National Institute of Advanced Industrial Science and Technology, 3.University of Tsukuba and, 4.Osaka University, Institute of Scientific & Industrial Research)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-1] Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires

Kouta Tateno, Hideki Gotoh, Yoshio Watanabe (1.NTT Basic Research Laboratories, NTT Corporation, 2.NTT Advanced Technology Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-2] Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates

Hemanth Jagannathan, Hyoungsub Kim, Michael Deal, Paul C. McIntyre, Yoshio Nishi (1.Department of Electrical Engineering, 2.Department of Materials Science and Engineering Stanford University, 3.Department of Advanced Materials Engineering Sungkyunkwan University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-3] Photocurrent of Single Silicon Nanowire synthesized by Thermal Chemical Vapor Deposition

Kyung-hwan Kim, Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Dong-young Jeong, Byungdon Min, Kyoungah Cho, Sangsig Kim, Minchul Suh (1.Department of Electrical Engineering, and Institute for Nano Science, Korea University, 2.AT Group Tech. Development 1-Team Corporate R&D Center, Samsung SDI Company)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-4] Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation

Ajay Agarwal, Tsung-Yang Liow, R. Kumar, C.H. Tung, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics, 2.Silicon Nano Device Laboratory, Department of Electrical & Computer Engineering, National University of Singapore)

2005 International Conference on Solid State Devices and Materials |PDF Download