[G-9-5] The Influence of Oxygen Concentration in the Sputtering Gas on the Self-synthesis of Tungsten Oxide Nanowires on Sputter-deposited Tungsten Films

Shui-Jinn Wang, Chao-Hsuing Chen, Rong-Ming Ko, Yi-Cheng Kuo, Yu-Yu Wang (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-6] Photoresponse of a single ZnO nanowire illuminated by modulated light

Kihyun Keem, Kyung-hwan Kim, Jeongmin Kang, Changjoon Yoon, Dong-young Jeong, Byungdon Min, Kyoungah Cho, Sangsig Kim (1.Department of Electrical Engineering, and Institute for Nano Science, Korea University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-7L] Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process

Koji Asano, Daiyu Kondo, Akio Kawabata, Fumio Takei, Mizuhisa Nihei, Yuji Awano (1.Fujitsu Limited, 2.CREST/JST, 3.Nanotechnology Research Center, Fujitsu Laboratories Ltd., 4.Fujitsu Laboratories Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-9-8L] One by One Control of Number of Carbon Nanotube Growth by Current Monitoring

M. Maeda, T. Kamimura, C. K. Hyon, K. Murata, K. Matsumoto (1.Uhiversity of Tsukuba)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-1-1] Physical and Microscopic Understanding of Data Retention Properties of DRAM

Kensuke Okonogi, Kiyonori Ohyu (1.Research & Development Gr., Technology and Development Office, ELPIDA Memory Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAM

Choong-Ho Lee, Chul Lee, Jae-man Yoon, Keunnam Kim, Seung Bae Park, Hee Soo Kang, Young Joon Ahn, Donggun Park (1.Device Research Team, R&D Center, Samsung Electronics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAM

T. Ando, N. Sato, S. Hiyama, T. Hirano, K. Nagaoka, H. Abe, A. Okuyama, H. Ugajin, K. Tai, S. Fujita, K. Watanabe, R. Katsumata, J. Idebuchi, T. Suzuki, T. Hasegawa, H. Iwamoto, S. Kadomura (1.Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 2.SoC R&D Center and, 3.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-1-4] Performance and Reliability of MIM (Metal-Insulator-Metal)　Capacitors with ZrO2 for 50nm DRAM Application

Kyoung-Ryul Yoon, Ki-Vin Im, Jea-Hyun Yeo, Eun-Ae Chung, Young-Sun Kim, Cha-Young Yoo, Sung-Tae Kim, U-In Chung, Joo-Tae Moon (1.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-1-5] Improvement of Retention time by Hydrogen Penetration Slit in DRAM Integration with Triple Metallization

J-H Lee, J-S Park, I-G Kim, T-S Kim, S-H Cheon, A-R Hong, J-M Chang, D-J Kim, J-Y Noh, Y-S Kim, J-S Yoon, K-H Yang, Kyungseok Oh (1.DRAM PA, Samsung Electronics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-2-1] Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement

Tetsuya Ishimaru, Nozomu Matsuzaki, Takashi Hashimoto, Hitoshi Kume (1.Central Research Laboratory, Hitachi, Ltd., 2.Renesas Technology Corp.)

2005 International Conference on Solid State Devices and Materials |PDF Download