[P1-17] Influences of Ion Implantation Damages on Elevated Source/Drain Formation for Ultra-Thin Body SOI MOSFET

H.J. Oh, T. Sakaguchi, J.C. Bea, T. Fukusima, M. Koyanagi (1.Dept. of Bioengineering and Robotics, Tohoku University, 2.Japan Science and Technology Corporation (JST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-18] Ion-Implanted p/n Junction Characteristics in p- and n-type Germanium

T. Nishimura, M. Toyama, K. Kita, K. Kyuno, A. Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-19] Impact of Annealing Methods and Sequences on Dopant Activation and Diffusion of Ultra-shallow Implanted Silicon

Woo Sik Yoo, Kitaek Kang (1.WaferMasters, Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-20] Effect of Hydrogen on Helium implant-induced Nanocavities

A. Vengurlekar, S. Ashok, E. Ntsoenzok, N. D. Theodore (1.Department of Engineering Science, The Pennsylvania State University, 2.CERI/CNRS, 3.Advanced Products R&D Lab, Freescale Semiconductor)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-21] Development of Hybrid Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Boron Implantation Process into Pre-amorphized Silicon Substrate

Tsuyoshi Masuda, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Momoji Kubo, Ewa Broclawik, Akira Miyamoto (1.Department of Applied Chemistry, Tohoku University, 2.Institute of Fluid Science, Tohoku University, 3.PRESTO, Japan Science and Technology Agency, 4.New Industry Creation Hatchery Center, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-22] Ultra-Shallow p+/n Junction Prepared by Low Energy BF3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing

Dongkyu Lee, Sungkweon Baek, Changhee Cho, Sungho Heo, Hyunsang Hwang (1.Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-23] Dopant Activation Enhancement in Silicon by Hydrogen Treatment

A. Vengurlekar, S. Ashok (1.Department of Engineering Science, The Pennsylvania State University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-24] Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI

Mika Nishisaka, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-25] Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si

Tetsuya Goto, Masato Terasaki, Hirokazu Asahara, Hiroshi Nakazawa, Atsutoshi Inokuchi, Jiro Yamanaka, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-26] Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies

Ryuichi Sugie, Keiko Matsuda, Naoto Nagai, Tsuneo Ajioka, Masanobu Yoshikawa, Toshikazu Mizukoshi, Katsuhiko Shibusawa, Shoji Yo (1.Toray Research Center Inc., 2.Miyagi Oki Electric Co., Ltd., 3.Oki Electric Industry Co., Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download