[B-4-01] Combination of Volatile and Non-volatile Functions in A Single Memory Cell with Independent Asymmetric Dual-Gate Structure
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
734件中(51 - 60)
[B-4-02] 3.3V Write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si Ferroelectric-gate Field-effect Transistors with 109 Endurance and Good Retention
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[B-4-03] Embedded Nano-Electro-Mechanical Memory for Reconfigurable Lookup Tables
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[B-5-01(Invited)] Technology Challenges for Future DRAM and NAND and Technology Break through with Emerging Memories, MRAM and PRAM
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-5-02(Invited)] Near-future Memory Hierarchy with Emerging Nonvolatile Memories and a Case Study of e-STT-MRAM Applications
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-5-03] 8.9-times Performance Improvement by Tri-Hybrid Storage System with SCM and MLC/TLC NAND Flash Memory
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-6-01] 47% Data-Retention Error Reduction of TLC NAND Flash Memory by Introducing Stress Relaxation Period with Round-Robin Wear-leveling
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-6-02] N2O-Treated Crystalline ZrTiO4 as Charge Trapping Layer for Flash Memory Applications Featuring Low Operation Voltage
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-6-03] Differential Multiple-Time-Programming Memory Cells by Laterally Coupled Floating Metal Gate FinFETs
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)
[B-7-01(Invited)] Memory Devices for Brain-Inspired Computing
2016 International Conference on Solid State Devices and Materials
|2016年9月29日(木)