2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

763 results (621 - 630)

[PS-6-14] In-Situ Mapping of Degradation of AlGaN/GaN MIS-HEMTs Using Video-Mode Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, S. Murase¹, Y. Watamura², T. Suemitsu² (1.Univ. of Fukui (Japan), 2.Tohoku Univ. (Japan))

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^○V. Poborchii¹, A. Shklyaev², L. Bolotov¹, N. Uchida¹, T. Tada¹ (1.AIST (Japan), 2.A.V. Rzhanov Inst. of Semiconductor Physics, SB RAS, (Russia))

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^○Q. Li¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

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^○Y. Yamaguchi¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

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2017 International Conference on Solid State Devices and Materials

^○T. -T. Lin¹, H. Hirayama¹ (1.RIKEN (Japan))

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^○A. Daami^1,2, F. Olivier^1,2, D. Sarrasin^1,2, L. Dupré^1,2, F. Templier^1,2 (1.Univ. Grenoble Alpes (France), 2.CEA-Leti, MINATEC Campus (France))

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^○N. Maeda¹, J. Yun¹, M. Jo¹, H. Hirayama¹ (1.RIKEN (Japan))

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^○I. Okumura¹, Y. Nishizaki¹, S. Yamashita¹, K. Niwa¹, K. Mukai¹ (1.Yokohama National Univ. (Japan))

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^○M. Sotto¹, K. Debnath¹, M. K. Hussain¹, Z. Li¹, F. Liu¹, A. Z. Khokar¹, S. Saito¹ (1.Univ. of Southampton (UK))

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763 results (621 - 630)