[J-3-03] Quantitative study of interfacial properties in monolayer MoS₂ FET

^○N. Fang¹, K. Nagashio¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:15 AM - 10:30 AM |PDF Download

[J-3-04] Conductance control by tunneling-barrier thickness optimizations in Fe/Al₂O₃/MoS₂ structure

^○N. Hayakawa¹, I. Muneta¹, T. Ohashi¹, K. Matsuura¹, J. Shimizu¹, K. Kakushima¹, K. Tsustui¹, H. Wakabayashi¹ (1.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:30 AM - 10:45 AM |PDF Download

[J-3-05] Resonant Enhancement of Band-to-band Tuneling in In-plane MoS₂/WS₂ Heterojunctions

^○T. Kuroda¹, N. Mori¹ (1.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:45 AM - 11:00 AM |PDF Download

[J-3-06] Demonstration of p-type graphene barristor using a Schottky contact between graphene and p-type organic semiconductor

^○K. Han¹, Y. J. Kim¹, S. Heo¹, C. -H. Kim¹, J. H. Kim¹, S. -Y. Kim¹, H. J. Hwang¹, S. K. Lee¹, H. J. Lee¹, M. -H. Yoon¹, B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. (Korea))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:00 AM - 11:15 AM |PDF Download

[J-4-01] Random Telegraph Noise in h-BN under Constant-Voltage Stress Test

^○Y. Hattori¹, T. Taniguchi², K. Watanabe², K. Nagashio^1,3 (1.Univ. of Tokyo (Japan), 2.NIMS (Japan), 3.PRESTO-JST (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:00 PM - 2:15 PM |PDF Download

[J-4-02] Electronic States of Silicene and Germanene on Amorphous Alumina

^○M. Araidai¹, M. Kurosawa¹, A. Ohta¹, K. Shiraishi¹ (1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:15 PM - 2:30 PM |PDF Download

[J-4-03] Oxygen-Induced Structural Deterioration and Effective Encapsulation of Few-Layer 1T′-MoTe₂ Thin Film

Z. Xie¹, L. Yang¹, H. Wu¹, J. Li¹, X. Lou¹, R. Zhu¹, H. Chang¹,^○W. Zhang¹ (1.Huazhong Univ. of Sci. and Tech. (China))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:30 PM - 2:45 PM

[J-4-04] A Theoretical Investigation On MoS₂ Nanopore Power Generators

^○Z. Huang¹, M. Tsutsui², Y. Zhang¹, Y. H. He¹, X. S. Miao¹, M. Taniguchi² (1.Huazhong Univ. of Sci. and Tech. (China), 2.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:45 PM - 3:00 PM |PDF Download

[J-4-05 (Late News)] Chemical Sensing using Graphene-based Surface-Acoustic-Wave Sensor

^○S. Okuda^1,2, T. Ono¹, Y. Kanai¹, M. Shimatani², S. Ogawa², T. Ikuta^1,3, K. Inoue¹, K. Maehashi^1,3, K. Matsumoto¹ (1.Osaka Univ. (Japan), 2.Mitsubishi Electric Corp. (Japan), 3.Tokyo Univ. of Agri. & Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 3:00 PM - 3:15 PM |PDF Download

[J-5-01 (Invited)] Flexible Optoelectronic Devices Based on Nitride Nanowires Embedded in Polymer Films

^○M. Tchernycheva¹, N. Guan¹, X. Dai¹, H. Zhang¹, V. Piazza¹, A. Kapoor^2,3, C. Bougerol^2,4, L. Mancini¹, F. H. Julien¹, L. Lu¹, M. Morassi¹, N. Gogneau¹, J. -C. Harmand¹, L. Largeau¹, M. Foldyna⁵, J. Eymery^2,3, C. Durand^2,3 (1.CNRS, Univ. Paris Saclay (France), 2.Univ. Grenoble Alpes (France), 3.CEA-CNRS “Nanophysique et Semiconducteurs” group, CEA-INAC-PHELIQS (France), 4.CEA-CNRS “Nanophysique et Semiconducteurs” group, CNRS, Institut Néel (France), 5.LPICM-CNRS, Ecole Polytechnique (France))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 9:30 AM - 10:00 AM |PDF Download