2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (731 - 740)

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[PS-14-06] AC Hot carrier effect and PBTI of a thin-film SOI Power n-MOSFET at high temperature

^○M. Nomura¹, A. Watanabe¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-07] Highly Efficient and Compact CMOS DC-DC Converter with Novel Transistor Layout of 60 nm Multi-pillar Type Vertical Body Channel MOSFET

^○K. Itoh^1,2,3, T. Endoh^1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-08] High Temperature SiC Power Module Enhanced with Transient Thermal Characteristic by Al-bump Technology

^○H. Tanisawa^1,2, F. Kato¹, K. Koui^1,3, S. Sato¹, K. Watanabe¹, H. Takahashi^1,4, Y. Murakami^1,5, H. Sato¹ (1.AIST (Japan), 2.Sanken electric Corp., Ltd. (Japan), 3.Calsonic Kansei Corp. (Japan), 4.Fuji Electric Co., Ltd. (Japan), 5.NISSAN MOTOR Corp., Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-09 (Late News)] Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region

^○M. Noguchi¹, T. Iwamatsu¹, H. Amishiro¹, H. Watanabe¹, K. Kita², S. Yamakawa¹ (1.Mitsubishi Electric Corp. (Japan), 2.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-10 (Late News)] Normally-off MOSFET Properties Fabricated on Mg Implanted GaN Layers

^○S. Takashima¹, K. Ueno¹, R. Tanaka¹, H. Matsuyama¹, M. Edo¹, K. Nakagawa² (1.Fuji Electric Co., Ltd. (Japan), 2.Univ. of Yamanashi (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-11 (Late News)] A first principles study on the C=C defects near SiC/SiO₂ interface: Defect passivation by double bond saturation

^○N. Tajima¹, T. Kaneko¹, T. Yamasaki¹, J. Nara¹, T. Schimizu², K. Kato³, T. Ohno¹ (1.NIMS (Japan), 2.Toshiba Corp. (Japan), 3.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-01] Contact Adhesion of Plated Ni/Cu Metallization for Si Solar Cells

^○W. J. Chen¹, J. Y. Wu¹, S. H. Hsieh² (1.National Yunlin Univ. of Sci. and Tech. (Taiwan), 2.National Formosa Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials

[PS-15-02] Formation of Perfect Superlattice with Aligned Plane Orientation of Colloidal PbS Quantum Dots

^○S. Fujimoto¹, F. Suetsugu¹, K. Mukai¹ (1.Yokohama National Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-03] Reactive Deposition Epitaxy of SrGe₂ Thin Films on Ge (111) and (001) Substrates

^○T. Imajo¹, K. Toko¹, R. Takabe¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-04] Characterization of Sputtered CdSe_XTe_1-X Films and Its Application in CdTe Solar Cells

^○C. Li¹, L. Wu¹, F. Wang¹, Y. Chen¹, L. Feng¹ (1.Sichuan Univ. (China))

2017 International Conference on Solid State Devices and Materials

763 results (731 - 740)

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