2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

Search Criteria
Search Filters

763 results (311 - 320)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
Next »

[M-5-04] Materials growth and band offset parameters of the Al₂O₃/In_0.28Ga_0.72Sb/AlSb/GaSb/GaAs heterostructure

^○S. H. Huynh¹, M. T. H. Ha¹, H. B. Do¹, T. A. Nguyen¹, Y. D. Jin¹, J. W. Lin¹, K. S. Yang¹, C. -C. F. Chang¹, Q. H. Luc¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:30 AM - 10:45 AM |PDF Download

[N-1-01 (Invited)] THz Circuitry Designs Based on InP and CMOS Devices

^○Y. Kawano¹, H. Matsumura¹, Y. Yagishita¹, Y. Nakasha¹, T. Takahashi¹, N. Hara¹ (1.Fujitsu Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 1:30 PM - 2:00 PM |PDF Download

[N-1-02] A Wide-Range Variable-Frequency Resonant Tunneling Diode Oscillator Based on a Novel MEMS Phase Shifter

^○T. Yamashita¹, D. Nakano¹, M. Mori¹, K. Maezawa¹ (1.Univ. of Toyama (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:00 PM - 2:15 PM |PDF Download

[N-1-03] Etching Control in Side-Recess Formation of High Electron Mobility Transistor for High-Responsivity Terahertz Detector

^○S. Suzuki¹, S. Shibuya¹, Y. Isobe¹ (1.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:15 PM - 2:30 PM |PDF Download

[N-1-04] Enhanced-Mode InAs QWFETs with the Source Connected Field Plate Technique for Low Power Logic Applications

^○J. N. Yao¹, Y. C. Lin¹, H. T. Hsu¹, T. J. Huang¹, M. S. Lin², Y. C. Wang¹, Z. Y. Huang¹, S. M. Sze¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Tsing Hua Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:30 PM - 2:45 PM |PDF Download

[N-1-05] Study of enhance mode π-gate InAs HEMT for logic application

^○Y. -C. Wang¹, J. -N. Yao¹, Y. -C. Lin¹, H. -T. Hsu¹, T. -J. Huang¹, C. -Y. Huang¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:45 PM - 3:00 PM |PDF Download

[N-1-06] First Demonstration of GaSb p-Channel Schottky MOSFET with Pt Source/Drain

^○M. L. Tsai¹, Y. P. Chang¹, C. H. Chien¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:00 PM - 3:15 PM |PDF Download

[N-2-01 (Invited)] Recent Progress in MOCVD Technology: III-Nitrides and 2D Nanomaterials

^○M. Heuken^1,2 (1.AIXTRON SE (Germany), 2.RWTH Aachen Univ. (Germany))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:40 PM - 4:10 PM |PDF Download

[N-2-02] Thermodynamic Analysis of the Surface Reactions in GaN MOVPE

^○K. Sekiguchi¹, H. Shirakawa¹, K. Chokawa¹, M. Araidai¹, Y. Kangawa^1,2, K. Kakimoto², K. Shiraishi¹ (1.Nagoya Univ. (Japan), 2.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:10 PM - 4:25 PM |PDF Download

[N-2-03] Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

^○D. Hosomi¹, Y. Miyachi¹, T. Egawa¹, M. Miyoshi¹ (1.Nagoya Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:25 PM - 4:40 PM |PDF Download

763 results (311 - 320)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
Next »

▲