[A-2-02] Determination of Dzyaloshinskii-Moriya Interaction Energy by Extended Droplet Model

^○S. Kim¹, P. -H. Jang², D. -H. Kim¹, M. Ishibashi¹, T. Taniguchi¹, T. Moriyama¹, K. -J. Kim^3,1, K. -J. Lee², T. Ono¹ (1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.KAIST (Korea))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:10 PM - 4:25 PM |PDF Download

[A-2-03] Spin Orbit Torques in Heavy-Metal/Ferromagnet/Normal-Metal Trilayers

^○Y. Du^1,2, Y. -C. Lau^1,3, J. Nitta², M. Hayashi^1,3 (1.Nat'l. Inst. for Mater. Sci. (Japan), 2.Tohoku Univ. (Japan), 3.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:25 PM - 4:40 PM |PDF Download

[A-2-04] Device Size Dependence of Spin-orbit Torque Induced Magnetization Switching in W/CoFeB/MgO

^○C. Zhang¹, S. Fukami¹, S. DuttaGupta¹, H. Sato¹, H. Ohno¹ (1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:40 PM - 4:55 PM |PDF Download

[A-2-05] Detection of heating effect due to magneto-static surface spin wave in CoFeB film

^○K. Yamanoi¹, T. Kimura¹ (1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:55 PM - 5:10 PM |PDF Download

[A-2-06] Current Density Dependence of Asymmetric Magnetoresistance in Pt/Py Bilayers Under Various Magnetic Field Strength

^○T. Li¹, S. Kim¹, S. -J. Lee², S. -W. Lee², T. Koyama³, D. Chiba³, T. Moriyama¹, K. -J. Lee², K. -J. Kim^1,4, T. Ono^1,5 (1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.Univ. of Tokyo (Japan), 4.KAIST (Korea), 5.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 5:10 PM - 5:25 PM |PDF Download

[A-5-01 (Invited)] Accumulative Magnetic Switching of Ultrahigh-Density Recording Media by Circularly Polarized Light

^○Y. K. Takahashi¹, R. Medapalli², S. Kasai¹, J. Wang¹, K. Ishioka¹, S. H. Wee³, O. Hellwig⁴, K. Hono¹, E. E. Fullerton² (1.NIMS (Japan), 2.UCSD (USA), 3.HGST (USA), 4.Institut für Ionenstrahlphysik und Materialforschung (Germany))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 9:30 AM - 10:00 AM |PDF Download

[A-5-02] Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window

^○K. Koi¹, H. Yoda¹, N. Shimomura¹, T. Inokuchi¹, Y. Kato¹, B. Altansargai¹, S. Shirotori¹, Y. Kamiguchi¹, K. Ikegami¹, S. Oikawa¹, H. Sugiyama¹, M. Shimizu¹, M. Ishikawa¹, T. Ajay¹, Y. Ohsawa¹, Y. Saito¹, A. Kurobe¹ (1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:00 AM - 10:20 AM |PDF Download

[A-5-03] Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM

^○T. Sasaki^1,2,3, T. Endoh^1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:20 AM - 10:40 AM |PDF Download

[A-5-04 (Invited)] Key advanced technology for eMRAM development

^○J. Lee¹, H. Jung¹, K. Lee¹, Y. Song¹, G. -H. Koh¹, G. -T. Jeong (1.Samsung Electronics Co., Ltd. (Korea))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:40 AM - 11:10 AM |PDF Download

[A-6-01] Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

^○M. Shimizu¹, H. Yoda¹, S. Shirotori¹, N. Shimomura¹, Y. Ohsawa¹, T. Inokuchi¹, K. Koui¹, Y. Kato¹, S. Oikawa¹, H. Sugiyama¹, A. Buyandalai¹, M. Ishikawa¹, K. Ikegami¹, Y. Kamiguchi¹, Y. Saito¹, A. Kurobe¹ (1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:15 AM - 11:35 AM |PDF Download