2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (581 - 590)

[PS-3-15 (Late News)] Multi-V_T with Metal Gate Work-function Modulation by PLAD Implants for Ge FinFET Applications

^○S. D. Kothari¹, H. Nejad², N. Variam², S. Lodha¹ (1.Indian Inst. of Tech. Bombay (India), 2.Applied Materials Inc. (USA))

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[PS-3-16 (Late News)] Low-Temperature Microwave Annealing Process for In_0.53Ga_0.47As MOSFETs

^○J. W. Lin¹, Q. -H. Luc¹, K. S. Yang¹, C. -C. Chang¹, C. -C. Fan Chiang¹, H. B. Do¹, H. M. T. Ha¹, S. H. Huynh¹, Y. D. Jin¹, T. A. Nguyen¹, Y. -C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

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[PS-4-01] Resistive Switching in V₂O₃ Thin Films Induced by Current Sweeps and Voltage Pulses

^○M. Menghini¹, P. Homm¹, C. Vets¹, B. Van Bilzen¹, J. P. Locquet¹ (1.KU Leuven (Belgium))

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[PS-4-02] Non-Destructive Observation of Chemical State in ReRAM by Laser-excited Photoemission Electron Microscopy

^○J. Kawakita^1,2, H. Shima^2,3, Y. Naitoh^2,3, H. Akinaga^2,3, T. Taniuchi^1,2, S. Shin^1,2 (1.Univ. of Tokyo (Japan), 2.AIST-UTokyo Advanced Operando-Measurement Tech. Open Innovation Lab. (OPERANDO-OIL) (Japan), 3.AIST (Japan))

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[PS-4-03] Role of Al₂O₃ Thin Layer to Improve The Switching Properties in Ta₅Si₃ Based CBRAM Device

^○D. Kumar¹, R. Aluguri¹, U. Chand¹, S. Chandrasekaran¹, T. -Y. Tseng¹ (1.National Chiao Tung Univ. (Taiwan))

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[PS-4-04] The effect of TiW thickness on non-polar to bipolar switching transformation in ZrO2-based CBRAM

^○S. Chandrasekaran¹, F. M. Simanjuntak², T. Y. Tseng¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Dong Hwa Univ. (Taiwan))

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[PS-4-05] An Investigation of Light Triggering Effect on the Programming of Gate-less Anti-fuse Cells

Z. -H. Chen¹,^○Y. Yeh¹, P. Cheng¹, C. J. Lin¹, Y. King¹ (1.National Tsing Hua Univ. (Taiwan))

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[PS-4-06] Error-Correction & Set/Reset Verify Strategy of Storage Class Memory (SCM) for SCM/NAND Flash Hybrid and All-SCM Storage

^○C. Matsui¹, K. Takeuchi¹ (1.Chuo Univ. (Japan))

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[PS-4-07] Experimental Investigation of Localized Stress Induced Leakage Current Distribution in Gate Dielectrics Using Array Test Circuit

^○H. Park¹, T. Suwa¹, R. Kuroda¹, A. Teramoto¹, S. Sugawa¹ (1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-08] Impact of Mechanical Stress to Cell Characteristics in Vertically Stacked NAND Flash Structure

^○Y. Oh¹, T. Ono², Y. Song¹ (1.Hanyang Univ. (Korea), 2.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

763 results (581 - 590)