[N-4-03] Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate

^○T. Hoshii¹, R. Takayama¹, A. Nakajima², S. Nishizawa³, H. Ohashi¹, K. Kakushima¹, H. Wakabayashi¹, K. Tsutsui¹ (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:45 PM - 3:00 PM |PDF Download

[N-4-04 (Late News)] MOVPE Growth Behavior of AlGaN/GaN Heterostructures with AlGaN Directly on RIE-GaN Showing a High Electron Mobility (>1300 cm²/Vs)

^○A. Yamamoto¹, K. Kanatani¹, S. Makino¹, M. Kuzuhara¹ (1.Univ. of Fukui (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 3:00 PM - 3:15 PM |PDF Download

[N-5-01 (Invited)] Recent achievements and pending challenges in Gallium Nitride vertical device development

^○S. Chowdhury¹ (1.Univ. of California, Davis (USA))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 9:30 AM - 10:00 AM |PDF Download

[N-5-02] Suppression of Positive Bias Temperature Instability in GaN-MOSFETs

^○Y. Kajiwara¹, T. Yonehara¹, D. Kato¹, H. Saito¹, K. Uesugi¹, A. Shindome¹, M. Kuraguchi¹, A. Yoshioka¹, S. Nunoue¹ (1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:00 AM - 10:15 AM |PDF Download

[N-5-03] 650 Volt GaN Quality and Reliability- Readiness for Automotive Applications

^○K. Shono¹, T. Hosoda¹, Y. Asai¹, R. Barr², K. Smith², Y. Wu², P. Parikh² (1.Transphorm Japan, Inc. (Japan), 2.Transphorm, Inc. (USA))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:15 AM - 10:30 AM |PDF Download

[N-5-04] Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT

^○T. Okuda¹, T. Kimoto¹, J. Suda^1,2 (1.Kyoto Univ. (Japan), 2.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 10:30 AM - 10:45 AM |PDF Download

[N-6-01 (Invited)] Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle

^○K. Kakushima¹, T. Hoshii¹, K. Tsutsui¹, A. Nakajima², S. Nishizawa³, H. Wakabayashi¹, I. Muneta¹, K. Sato⁴, T. Matsudai⁵, W. Saito⁵, T. Saraya⁶, K. Itou⁶, M. Fukui⁶, S. Suzuki⁶, M. Kobayashi⁶, T. Takakura⁶, T. Hiramoto⁶, A. Ogura⁷, Y. Numasawa⁷, I. Omura⁸, H. Ohashi¹, H. Iwai¹ (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan), 4.Mitsubishi Electric Corp. (Japan), 5.Toshiba Electronic Devices & Storage Corp. (Japan), 6.Univ. of Tokyo (Japan), 7.Meiji Univ. (Japan), 8.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:15 AM - 11:45 AM |PDF Download

[N-6-02] 5.0 kV Breakdown-Voltage Vertical GaN p-n Junction Diodes

^○H. Ohta¹, K. Hayashi¹, F. Horikiri², T. Nakamura¹, T. Mishima¹ (1.Hosei Univ. (Japan), 2.Sciocs Company Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:45 AM - 12:00 PM |PDF Download

[N-6-03] Potential of the 0.35 µm CMOS gate driver technology for the GaN power devices

^○S. Miyano¹, T. Akagi¹, S. Abe¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 12:00 PM - 12:15 PM |PDF Download

[N-6-04] Vertical-type 2DHG Diamond MOSFETs

^○N. Oi¹, T. Kudo¹, T. Muta¹, S. Okubo¹, I. Tsuyuzaki¹, T. Kageura¹, M. Inaba^1,2, S. Onoda³, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.National Inst for Quantum and Radiological Sci. and Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 12:15 PM - 12:30 PM |PDF Download