2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (351 - 360)

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[O-1-06 (Late News)] Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs

^○K. Kutsuki¹, Y. Murakami¹, Y. Watanabe², T. Onishi¹, K. Yamamoto³, H. Fujiwara¹, T. Ito¹ (1.Toyota Motor Corp. (Japan), 2.Toyota Central R&D Labs. Inc. (Japan), 3.DENSO Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:00 PM - 3:15 PM |PDF Download

[O-3-01 (Invited)] Characterization of Ga₂O₃ MOSFETs for Low to Medium Power Applications

^○G. H. Jessen¹, K. Chabak¹, A. Green^2,1, N. Moser^3,1, J. McCandless^2,1, K. Leedy¹, A. Crespo¹, S. Tetlak¹ (1.Air Force Research Lab. (USA), 2.KBRwyle (USA), 3.George Mason Univ. (USA))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 9:30 AM - 10:00 AM |PDF Download

[O-3-02 (Invited)] Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode

^○T. Matsumoto^1,2, H. Kato², T. Makino², M. Ogura², D. Takeuchi², T. Inokuma¹, N. Tokuda^1,2, S. Yamasaki² (1.Kanazawa Univ. (Japan), 2.AIST (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:00 AM - 10:30 AM |PDF Download

[O-3-03] Threshold control of diamond MESFET by MWCVD growth conditions

^○H. Kawashima¹, H. Umezawa¹, S. Ohmagari¹, R. Tamano², T. Saito², Y. Mokuno¹ (1.AIST (Japan), 2.Osaka Pref. Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:30 AM - 10:45 AM |PDF Download

[O-3-04] Normally-off Diamond p-FET Application in Cascode with Breakdown Voltage over 1.7 kv

^○T. Bi¹, J. Niu¹, N. Oi¹, M. Inaba¹, T. Sasaki¹, K. Hiroshi¹ (1.Waseda Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:45 AM - 11:00 AM |PDF Download

[O-4-01] Current conduction in H₂O-grown ALD-Al₂O₃ films on Si substrates

^○S. Okubo¹, D. Matsumura¹, K. Horikawa¹, A. Hiraiwa^1,2, H. Kawarada¹ (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:00 PM - 2:15 PM |PDF Download

[O-4-02] Structure Based Compact Model for Output Capacitance of Trench Field-Plate MOSFET to Enable Power Loss Prediction

^○K. Kobayashi¹, M. Sudo¹, I. Omura¹ (1.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:15 PM - 2:30 PM |PDF Download

[O-4-03] A Novel Edge Termination Design for Superjunction VDMOS

^○C. -H. Cheng¹, C. -F. Huang¹, K. -Y. Lee² (1.National Tsing Hua Univ. (Taiwan), 2.National Taiwan Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:30 PM - 2:45 PM |PDF Download

[O-4-04] Temperature Distribution Imaging inside Power Devices by Real-Time Simulation

^○A. Watanabe¹, R. Nagao¹, I. Omura¹ (1.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:45 PM - 3:00 PM |PDF Download

[PS-1-01] Schottky Barrier Heights of Metal Silicides on Si and Ge

^○J. Robertson¹, H. Li¹ (1.Cambridge Univ. (UK))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:35 AM - 11:37 AM |PDF Download

763 results (351 - 360)

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