2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (421 - 430)

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[PS-6-08] Improved Electrical Stability of Thin-Film Transistors with Co-sputtered Ti-IGZO Channel and Zr_0.85Si_0.15O₂ Gate Dielectric

H. -P. Yan¹,^○ Z. -K. Zhuang¹ (1.National Cheng Kung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:49 AM - 11:51 AM |PDF Download

[PS-6-09] An improved normally-off Al₂O₃/GaN MOSFET based on self-terminating gate-recess etching technique

^○H. Wang¹, J. Wang¹, J. Liu¹, M. Yu¹, B. Xie¹, W. Wu¹ (1.Peking Univ. (China))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:51 AM - 11:53 AM |PDF Download

[PS-6-10] Fabrication of a Pt/Mg_xZn_1-xO/ZnO Schottky barrier photodiode utilizing a field plate structure

^○H. Endo¹, K. Takahashi¹, Y. Kashiwaba² (1.Iwate Indus. Res. Inst. (Japan), 2.Iwate Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:53 AM - 11:55 AM |PDF Download

[PS-6-11] Electrical Performances of 1T-DRAM based on PNPN Tunneling FET with asymmetric Double-Gate Structure

^○Y. J. Yoon¹, J. H. Seo¹, M. S. Cho¹, B. G. Kim¹, I. M. Kang¹ (1.Kyungpook National Univ. (Korea))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:55 AM - 11:57 AM |PDF Download

[PS-6-12] Transient-mode Simulation of MOS C-V Characteristics for GaN

^○K. Fukuda¹, H. Asai¹, J. Hattori¹, M. Shimizu¹, T. Hashizume² (1.AIST (Japan), 2.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:57 AM - 11:59 AM |PDF Download

[PS-6-13] Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, H. Konishi¹, H. Imadate¹, Y. Yamaoka^2,3, K. Matsumoto², T. Egawa³ (1.Univ. of Fukui (Japan), 2.Taiyo Nippon Sanso Corp. (Japan), 3.Nagoya Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:59 AM - 12:01 PM |PDF Download

[PS-6-14] In-Situ Mapping of Degradation of AlGaN/GaN MIS-HEMTs Using Video-Mode Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, S. Murase¹, Y. Watamura², T. Suemitsu² (1.Univ. of Fukui (Japan), 2.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 12:01 PM - 12:03 PM |PDF Download

[PS-7-01] Dewetting-Induced Formation and Optical Properties of Arrays of Low-Ge-Content SiGe Mie-Resonators on Si (100) Surface

^○V. Poborchii¹, A. Shklyaev², L. Bolotov¹, N. Uchida¹, T. Tada¹ (1.AIST (Japan), 2.A.V. Rzhanov Inst. of Semiconductor Physics, SB RAS, (Russia))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:35 AM - 11:37 AM |PDF Download

[PS-7-02] Low-Crosstalk Optical Switch with InGaAsP/Si Hybrid MOS Optical Phase Shifter

^○Q. Li¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:37 AM - 11:39 AM |PDF Download

[PS-7-03] Low-optical-loss graphene-based phase modulator operating at mid-infrared wavelength

^○Y. Yamaguchi¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:39 AM - 11:41 AM |PDF Download

763 results (421 - 430)

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