2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (341 - 350)

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[N-7-01] Removal of reactive-ion-etching damage from n-GaN surface using a photoelectrochemical process

^○S. Matsumoto¹, M. Toguchi¹, T. Sato¹ (1.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 1:40 PM - 1:55 PM |PDF Download

[N-7-02] High Thermal Stability of Abrupt SiO₂/GaN Interface with Low Interface State Density

^○T. X. Nguyen^1,2, N. Taoka², A. Ohta¹, K. Makihara¹, H. Yamada², T. Takahashi², M. Ikeda¹, M. Shimizu², S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.AIST-NU GaN Advance Device Open Innovation Lab. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 1:55 PM - 2:10 PM |PDF Download

[N-7-03] High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator

^○C. C. Hsu¹, J. H. Lee¹, Y. C. Lin¹, J. C. Lin¹, C. H. Wu¹, J. N. Yao¹, H. T. Hsu¹, K. Kakushima², H. Iwai², E. Y. Chang¹ (1.National Chiao Yung Univ. (Taiwan), 2.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:10 PM - 2:25 PM |PDF Download

[N-7-04 (Late News)] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

^○A. Endoh¹, I. Watanabe¹, A. Kasamatsu¹, T. Mimura^1,2 (1.NICT (Japan), 2.Fujitsu Labs. Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:25 PM - 2:40 PM |PDF Download

[N-7-05 (Late News)] Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process

^○H. Q. Luc¹, W. J. Lin¹, S. K. Yang¹, C. C. Chang¹, C. -C. C. Fan¹, B. H. Do¹, M. T. H. Ha¹, H. S. Huynh¹, D. Y. Jin¹, A. T. Nguyen¹, C. Y. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:40 PM - 2:55 PM |PDF Download

[O-1-01 (Invited)] Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions

^○M. Sometani¹, M. Okamoto¹, T. Hatakeyama¹, Y. Iwahashi¹, M. Hayashi^1,2, D. Okamoto³, H. Yano³, S. Harada¹, Y. Yonezawa¹, H. Okumura¹ (1.AIST (Japan), 2.DENSO Corp. (Japan), 3.Univ. of Tsukuba (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 1:30 PM - 2:00 PM |PDF Download

[O-1-02] First Principles Study of the effect of Hydrogen Annealing effects on SiC MOSFETs

^○K. Chokawa¹, K. Shiraishi¹ (1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:00 PM - 2:15 PM |PDF Download

[O-1-03] Kinetics of Enhanced Oxide Growth on 4H-SiC in O₂ and H₂O Coexisting Ambient

K. Ishinoda¹,^○K. Kita¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:15 PM - 2:30 PM |PDF Download

[O-1-04] Oxidation-induced Lattice Distortion at 4H-SiC (0001) Surface Characterized by Surface Sensitive In-plane X-ray Diffractometry

^○A. D. Hatmanto¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:30 PM - 2:45 PM |PDF Download

[O-1-05] Hole Trapping in SiC-MOS Devices Evaluated by Fast- CV Method

^○M. Hayashi^1,2, M. Sometani¹, T. Hatakeyama¹, H. Yano³, S. Harada¹ (1.AIST (Japan), 2.DENSO Corp. (Japan), 3.Univ. of Tsukuba (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:45 PM - 3:00 PM |PDF Download

763 results (341 - 350)

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