Oral presentation

[17a-E13-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 17, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-E13-1] Fabrication of InGaN µ-LED arrays and evaluation of electrical and luminescence properties

^○Kazuaki Tsuchiyama¹, Hiroto Sekiguchi¹, Hiroyuki Tahara¹, Hiroshi Okada², Akihiro Wakahara¹ (Toyohashi Univ. Tech.¹, EIIRIS²)

9:15 AM - 9:30 AM

[17a-E13-2] The effect of Sub-Wavelength-Grating profile on LED polarization characteristics

^○Ryo Shimizu¹, Yuusuke Takashima¹, Yoshiki Naoi^1,2 (ATS, Tokushima Univ.¹, STS, Tokushima Univ.²)

9:30 AM - 9:45 AM

[17a-E13-3] Fabrication of InGaN based plasmonic LED with thin p-type layer

^○Tetsurou Tsukada¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Kazutaka Tateishi², Kouichi Okamoto² (Yamaguchi Univ.¹, Kyushu Univ.²)

9:45 AM - 10:00 AM

△ [17a-E13-4] Study of the high reflective Ag electrode on p-type GaN

^○（M1）Syunsuke Kawai¹, Daisuke Iida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Inst.²)

10:00 AM - 10:15 AM

△ [17a-E13-5] Evaluation of electron blocking layer in blue-LED by direct measurement of electron overflow

^○Kento Hayashi¹, Kenjo Matsui¹, Toshiki Yasuda¹, Shota Katsuno¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research center Nagoya Univ.²)

10:15 AM - 10:30 AM

△ [17a-E13-6] Investigation of hole injections in Ultra-Violet light emitting diodes by polarization engineering

^○Toshiki Yasuda¹, Kento Hayasi¹, Kenichirou Takeda¹, Tsubasa Nakashima¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. Sci. and Technol. Meijio Univ.¹, Akasaki Research Center, Nagoya Univ.², Grad. Sch. of Eng. Nagoya Univ.³)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [17a-E13-7] Highly efficient LEDs on nitride-based tunnel junction

Takatoshi Morita¹, ^○Masataka Ino¹, Yuka Kuwano¹, Masahiro Watanabe¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC,Nagoya Univ.²)

11:00 AM - 11:15 AM

△ [17a-E13-8] Current confinement structures with buried nitride-based tunnel junctions

^○Yuka Kuwano¹, kousuke Horikawa¹, Takatoshi Morita¹, Masataka Ino¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci. & Eng, Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

11:15 AM - 11:30 AM

[17a-E13-9] Improvement of light extraction efficiency of InGaN/AlGaN based LEDs with fractal patterned sapphire substrate

^○Kotaro Dai¹, Keiichi Kajita¹, Lingfeng Shen¹, Yasuhito Kajita¹, Kei Shinotsuka¹ (Oji Holdings Corp.¹)

11:30 AM - 11:45 AM

△ [17a-E13-10] Dislocation density dependence of GaInN/GaN heterostructure

^○（B）Koji Ishihara¹, yasunari Kondo¹, Hiroyuki Matsubara¹, Daisuke Iida¹, Taiji Yamamoto¹, Mihoko Sowa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Res. Cen., Nagoya Univ.²)

11:45 AM - 12:00 PM

△ [17a-E13-11] Suppression of Metastable-Phase Inclusion in MOVPE-Grown －c-plane InGaN/GaN Multiple Quantum Wells

^○Kanako Shojiki¹, Jung-Hun Choi^1,2, Takuya Iwabuchi¹, Noritaka Usami³, Tomoyuki Tanikawa^1,2, Shigeyuki Kuboya¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST, CREST², Nagoya Univ.³)

Oral presentation

[17p-E13-1~18] 15.4 III-V-group nitride crystals

Mon. Mar 17, 2014 1:00 PM - 6:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00〜13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

▲ [17p-E13-1] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN (x〜0.3) (I): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

^○Md.Tanvir Hasan^1,2, Akihiro Mihara^1,2, Norihiko Narita³, Naoteru Shigekawa⁴, Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², The Kansai Electric Power Co.³, Osaka City Univ.⁴)

1:15 PM - 1:30 PM

▲ [17p-E13-2] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN(x〜0.3) (II) Suppression of the phase separation

^○Md.Tanvir Hasan^1,2, Akihiro Mihara^1,2, Norihiko Narita³, Naoteru Shigekawa⁴, Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², The Kansai Electric Power Co.³, Osaka City Univ.⁴)

1:30 PM - 1:45 PM

[17p-E13-3] Simulation of III-V nitride solar cell with respect to strain effect

^○Masatomo Sumiya¹, Liwen Sang¹, Fumio Hasegawa², Yoshitaka Nakano² (NIMS¹, Chubu Univ.²)

1:45 PM - 2:00 PM

△ [17p-E13-4] Characterization of heterogeneity on GaInN films by fluorescence microscope and secondary ion mass spectrometry

^○Naoki Toyomitsu¹, Liwen Sang², Tomohiro Yamaguchi¹, Tohru Honda¹, Masatomo Sumiya² (Kogakuin Univ.¹, NIMS.²)

2:00 PM - 2:15 PM

[17p-E13-5] Development of MOVPE Process for SMART Solar Cell by Spectroscopic Ellipsometory

^○Kazuhide Kusakabe^1,2,3, Ke Wang^1,2,3, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, Kogakuin Univ.⁴)

2:15 PM - 2:30 PM

▲ [17p-E13-6] Improvement of Junction Properties of SMART Solar Cells grown by RF-MBE

^○Ke Wang^1,2,3, Kazuhide Kusakabe^1,2,3, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, Kogakuin Univ.⁴)

Break 14:30〜14:45 （2:30 PM - 2:45 PM）

2:45 PM - 3:00 PM

△ [17p-E13-7] Application to flame sensor of nitride-based hetero-field-effect-transistor-type UV photosensors

^○（B）Yuma Yamamoto¹, Takuya Murase¹, Mami Ishiguro¹, Tomoaki Yamada¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo univ.¹, Akasaki Inst.²)

3:00 PM - 3:15 PM

[17p-E13-8] Radiation beam characteristics of regularly arranged nanocolumn light emitters – (I)

^○Ai Yanagihara¹, Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:15 PM - 3:30 PM

[17p-E13-9] Radiation beam characteristics of regularly arranged nanocolumn light emitters - (II)

^○（PC）Shunsuke Ishizawa¹, Ai Yanagihara¹, Yuki Sumikawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:30 PM - 3:45 PM

[17p-E13-10] PL emission property of nitride nanocolumns on Si substrates

^○Daishi Fukushima¹, Hiroaki Hayashi¹, Toshifumi Kudo¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:45 PM - 4:00 PM

[17p-E13-11] Investigation of optical gain of optically pumped lasing action at a wavelength of approximately 390 nm in hexagonal GaN microdisks

^○Tetsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (Shizuoka Univ.¹, Univ. of Yamanashi², Sophia Univ.³)

4:00 PM - 4:15 PM

[17p-E13-12] Selective Area Growth of Regularly Arranged AlGaN Nanocolumns by Nanotemplate

^○Kouji Yamano¹, Katsumi Kishino^1,2, Hiroto Sekiguchi³, Akihiro Wakahara³ (Sophia Univ.¹, Sophia Nanotech Research center², Toyohashi Univ. Tech³)

Break 16:15〜16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

[17p-E13-13] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique

^○（B）Ryo Hachiya¹, Akihiko Kikuchi¹, Hiroki Hachiya¹, Ryo Kita¹ (Sophia University¹)

4:45 PM - 5:00 PM

[17p-E13-14] Study of Patterned Substrates and Growth Condition for Thinning Nanocolumns

^○Yutaro Mizuno^1,2, Yusuke Igawa^1,2, Kota Asami^1,2, Tatsuya Kanou^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

5:00 PM - 5:15 PM

△ [17p-E13-15] Fabrication of InGaN/GaN Nanowire Quantum Dots by Selective-Area MOCVD

^○Choi Kihyun¹, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

5:15 PM - 5:30 PM

[17p-E13-16] MOCVD growth of GaN/Al_xGa_1-xN (x < 0.25) quantum dots formed by interface fluctuation

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

5:30 PM - 5:45 PM

[17p-E13-17] Single dot spectroscopy of GaN/AlGaN quantum dots formed by interface fluctuation ~ Observation of narrowest photoluminescence linewidth (110 μeV) ~

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

5:45 PM - 6:00 PM

▲ [17p-E13-18] Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots

^○Sylvain Sergent¹, Satoshi Kako², Matthias Buerger³, Thorsten Schupp³, Donat As³, Yasuhiko Arakawa^1,2 (Nanoquine, Tokyo Uni.¹, IIS, Tokyo Uni.², Paderborn Uni.³)

Oral presentation

[18a-E13-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E13-1] Mechanism of the strain modulation of GaN grown on Si substrates by a thin AlN/GaN superlattice interlayer

^○Xu Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (AIST¹)

9:15 AM - 9:30 AM

[18a-E13-2] Structural characterization of GaN grown with buffer layers on graphene/Si (100) substrate by RF-MBE

^○Tsutomu Araki¹, Satoru Uchimura¹, Yasushi Nanishi^2,3, Tatsuya Fujishima⁴, Tomás Palacios⁴, Amaia Zurutuza⁵ (Ritsumeikan Univ., Dept. of Photonics¹, R-GIRO², Seoul National Univ.³, Massachusetts Institute of Technology⁴, Graphenea⁵)

9:30 AM - 9:45 AM

[18a-E13-3] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method

^○Tokuo Yodo¹, Yuuichi Mukaida¹, Daishi Shiojiri², Mamoru Yoshimoto² (Osaka Inst. of Tech.¹, Tokyo Inst. of Tech.²)

9:45 AM - 10:00 AM

[18a-E13-4] Nitride LEDs prepared on amorphous substrates with graphene buffer layers

JohnWoo Shon¹, ^○Jitsuo Ohta¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (The Univ. of Tokyo¹, JST-CREST²)

10:00 AM - 10:15 AM

[18a-E13-5] Effect of pretreatment on carbonization of Si surface using CO gas

^○Momoko Deura¹, Ichiro Yonenaga¹, Hiroyuki Fukuyama² (IMR, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [18a-E13-6] Investigation of high-temperature sputtered-AlN buffer layer

^○（M1）Hiroaki Ito¹, Daisuke Iida¹, Yasunari Kondo¹, Mihoko Sowa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Inst.²)

10:45 AM - 11:00 AM

△ [18a-E13-7] Orientation improvement of the sputtered AlN on Si by the Ti pre-orientation layer

^○（DC）Tadashi Mitsunari¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

11:00 AM - 11:15 AM

△ [18a-E13-8] MOVPE Growth of GaN on ScAlMgO₄ Substrate

^○Takuya Iwabuchi¹, Shigeyuki Kuboya¹, Tomoyuki Tanikawa^1,2, Takashi Hanada^1,2, Ryuji Katayama^1,2, Akio Minato³, Tsuguo Fukuda³, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST², Fukuda Crystal Laboratory³)

11:15 AM - 11:30 AM

[18a-E13-9] Polarity Determination of MOVPE Grown GaN on c-ScAlMgO₄ by using Anomalous Dispersion X-ray Diffraction

^○Takashi Hanada^1,2, Takuya Iwabuchi¹, Shigeyuki Kuboya¹, Tomoyuki Tanikawa^1,2, Ryuji Katayama^1,2, Akio Minato³, Tsuguo Fukuda³, Katsuhiko Inaba⁴, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST², Fukuda Crystal Lab.³, Rigaku⁴)

11:30 AM - 11:45 AM

[18a-E13-10] Growth of GaN (0001) epitaxial layer on Ga₂O₃（- (-201) substrate

^○Yoshikatsu Morishima¹, Yoshihiro Yamashita¹, Shinkuro Sato¹, Kazuyuki Iizuka¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (Tamura Corporation¹)

11:45 AM - 12:00 PM

▲ [18a-E13-11] Selective growth of N-face GaN (000-1) by group-III-source flow-rate modulation epitaxy

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT BRL¹)

Oral presentation

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:00〜13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:30 PM

[18p-E13-1] [Isamu Akasaki Award Speech]Chemistry on thermodynamic analysis of the compound semiconductor -thermodynamic analysis and new growth method -

^○Akinori Koukitu¹ (TUAT¹)

1:30 PM - 1:45 PM

[18p-E13-2] High quality GaN bulk crystal growth by acidic ammonothermal method

^○Makoto Saito^1,2, Quanxi Bao^1,3, Daisuke Tomida¹, Ｋｅｎｔａｒｏ Furusawa¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Ｔｏhｒｕ Ishiguro¹, Chiaki Yokokyama¹, Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corp.², The Japan Steel Works³)

1:45 PM - 2:00 PM

[18p-E13-3] Introduction of the Dipping Technique to the Na-Flux Method for Controlling Surface Characteristics of Seed Crystals

^○Taro Sato¹, Masayuki Imanishi¹, Koshi Nakamura¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Yuma Todoroki¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka Univ.¹)

2:00 PM - 2:15 PM

△ [18p-E13-4] The Relationship between Growth Habit and the Behavior of Dislocations of GaN Crystals in the Na-Flux Coalescence Growth

^○Masayuki Imanishi¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Daisuke Matsuo¹, Yuma Todoroki¹, Mihoko Maruyama¹, Hirotada Asazu², Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka Univ.¹, Osaka Univ.²)

2:15 PM - 2:30 PM

[18p-E13-5] High rate GaN growth using Ga₂O vapor on Na-flux-GaN substrates

^○Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Yuan Bu¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ¹, Itochu Plastics Inc²)

2:30 PM - 2:45 PM

[18p-E13-6] Growth of GaN crystal using Ga₂O synthesized from Ga metal

^○Tomoaki Sumi¹, Masami Juta¹, Yuan Bu¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ.¹, Itochu Plastics Inc.²)

Break 14:45〜15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[18p-E13-7] First-Principles Calculation of Carbon-Added Na Flux GaN Growth Process

^○Takahiro Kawamura^1,2, Hiroki Imabayashi², Mihoko Maruyama², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (Mie Unv.¹, Osaka Univ.²)

3:15 PM - 3:30 PM

[18p-E13-8] Reduction in dislocations and stacking faults in semi-polar {11-22}GaN by hydride vapor phase epitaxy

^○Motohisa Ueno¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

3:30 PM - 3:45 PM

[18p-E13-9] Regrowth on semipolar GaN by Hydride Vapor Phase Epitaxy

^○Takashi Inagaki¹, Yasuhiro Hashimoto¹, keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

3:45 PM - 4:00 PM

[18p-E13-10] Impact of growth conditions of hydride vapor phase epitaxy on crystalline qualities of thick {20-21} GaN layers

^○Yasuhiro Hashimoto¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

4:00 PM - 4:15 PM

△ [18p-E13-11] Thermal cleaning of free-standing GaN substrates

^○（M1）Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Reina Miyagawa², Osamu Eryu² (Mie Univ.¹, Nagoya Inst. Tech.²)

4:15 PM - 4:30 PM

△ [18p-E13-12] Study on carrier dynamics and piezoelectricity of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

^○（M1）Yuki Tsutsui¹, Hirotsugu Ogi¹, Nobutomo Nakamura¹, Yusuke Mori², Mamoru Imade², Masashi Yoshimura², Masahiko Hirao¹ (Osaka Univ. Grad. Sch. of Engineering Science¹, Osaka Univ. Grad. Sch. of Engineering²)

Break 16:30〜16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

△ [18p-E13-13] Homo-epitaxial growth on trench patterned AlN free-standing substrate by HVPE

^○（M1）Yoshinobu Watanabe¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Yosuke Iwasaki², Shunro Nagata² (Mie Univ.¹, JFE Mineral Company, LTD. Research Laboratories²)

5:00 PM - 5:15 PM

[18p-E13-14] HVPE growth and characterization of ScN epilayers

^○Yuichi Oshima¹, Garcia Villora¹, Kiyoshi Shimamura¹ (Natianal Institute for Materials Science¹)

5:15 PM - 5:30 PM

[18p-E13-15] Structural and mechanical characterization of BN films prepared by Reactive Plasma-Assisted Coating (RePAC)—N2-flow rate effects

^○Masao Noma¹, koji Eriguchi², shigehiko Hasegawa³ (SHINKO SEIKI. Co., LTD¹, Kyoto University², Osaka University³)

5:30 PM - 5:45 PM

[18p-E13-16] Ion-beam-assisted MBE growth mechanism of single-crystal cubic boron nitride (c-BN)

^○Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (NTT BRL¹)

5:45 PM - 6:00 PM

[18p-E13-17] Luminescence property of hexagonal boron nitride films grown by high-temperature CVD

^○Naoki Umehara¹, Iori Kuwahara¹, Hey-Young Lee¹, Tetsuya Kouno³, Hiroko Kominami³, Yoichiro Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)

6:00 PM - 6:15 PM

[18p-E13-18] Structural characterization of hexigonal boron nitride films grown on asapphire substrate by CVD

^○Iori Kuwahara¹, Naoki Umehara¹, Tetsuya Kouno³, Hiroko Kominami³, Yoichiro Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)

Oral presentation

[19a-E13-1~11] 15.4 III-V-group nitride crystals

Wed. Mar 19, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

▲ [19a-E13-1] Radiation Properties of M-plane AlGaN MQW Light-Emitting Diodes

^○Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT Basic Research Laboratories¹)

9:15 AM - 9:30 AM

△ [19a-E13-2] Influences on the lattice-relaxation layer of AlGaN multiple quantum wells on sapphire

^○（M1）Kazuhiro Nakahama¹, fumitsugu Fukuyo^1,2, Hideto Miyake¹, Kazumasa Hiramatsu¹, Harumasa Yoshida², Yuji Kobayashi² (Mie Univ.¹, HAMAMATSU PHOTONICS K. K.²)

9:30 AM - 9:45 AM

△ [19a-E13-3] Development of Vertical-type Deep Ultraviolet LED on n⁺Si substrate(2)

^○（M1）Kentaro Shibano¹, Noriko Kurose², Tsutomu Araki¹, Yoshinobu Aoyagi² (Ritsumeikan Univ.,¹, Ritsumeikan Univ., The Research Organization of Science and Technology²)

9:45 AM - 10:00 AM

[19a-E13-4] Remarkably Short Radiative Recombination Lifetime of High Quality Semipolar AlGaN/AlN Quantum Wells due to Suppression of Internal Electric Field

^○Shuhei Ichikawa¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:00 AM - 10:15 AM

△ [19a-E13-5] In-plane Polarization Control of Semipolar AlGaN/AlN Quantum Wells

^○Shuhei Ichikawa¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:15 AM - 10:30 AM

△ [19a-E13-6] High growth rate of high quality AlInN by MOVPE

^○（B）Kazuki Ikeyama¹, Yugo Kozuka¹, Toshiki Yasuda¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC, Nagoya Univ.²)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [19a-E13-7] Nitride-based distributed Bragg reflectors with AlInN grown at high growth rate

^○（M1）Yugo Kozuka¹, Kazuki Ikeyama¹, Toshiki Yasuda¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ¹, Akasaki Research Center, Nagoya Univ²)

11:00 AM - 11:15 AM

[19a-E13-8] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (I)

^○Shigefusa Chichibu¹, Kentaro Furusawa¹, Tomomi Ohtomo¹, kouji Hazu¹, Takeyoshi Onuma¹, Yoichi Ishikawa¹, Masanori Tashiro¹, Hirotaka Ikeda², Kenji Fujito² (IMRAM, Tohoku Univ.¹, Mitsubishi Chemical Corporation²)

11:15 AM - 11:30 AM

△ [19a-E13-9] Coherent Growth of Semipolar (11-22) InGaN/AlGaN Stress-Compensated Superlattices

^○（D）Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[19a-E13-10] Characteristics of nitride films etched with Cl2 neutral-beam

^○Jitsuo Ohta¹, Halubai Sekhar², Tomohiro Kubota², Takeru Okada^2,4, Seiji Samukawa^2,3,4, Hiroshi Fujioka^1,4 (IIS, The Univ. of Tokyo¹, IFS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, JST-CREST⁴)

11:45 AM - 12:00 PM

▼ [19a-E13-11] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation

^○（D）Zheng Sun³, Tsutomu Nagayama¹, Tetsuya Watanabe², Yoshio Honda³, Hiroshi Amano^3,4 (Nissin Ion Equipment Co., Ltd.¹, Nissin Electric Co., Ltd.², Department of Electrical Engineering and Computer Science, Nagoya Univ.³, Akasaki Research Center, Nagoya Univ.⁴)

Oral presentation

[20a-E13-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-E13-1] Vacancy-type defect characterization of Gd-doped GaN films by positron annihilation spectroscopy

^○（PC）Atsushi Yabuuchi¹, Nagayasu Oshima¹, Brian O'Rourke E.¹, Ryoichi Suzuki¹, Kenji Ito¹, Sota Sano², Kotaro Higashi², Yi-Kai Zhou², Shigehiko Hasegawa² (AIST¹, Osaka Univ.²)

9:15 AM - 9:30 AM

[20a-E13-2] Theoretical study of vacancy in Gd-doped GaN

^○Koun Shirai¹, Nugraha Taufik¹, Shu-ichi Emura¹, Tamio Oguchi¹ (ISIR, Osaka Univ.¹)

9:30 AM - 9:45 AM

[20a-E13-3] Growth of InN layer by UHV sputter epitaxy

^○Yuki Kobashi¹, Akiyori Tada¹, Susumu Fukui¹, Shunsuke Sasahara¹, Shota Hiruma¹, Takanori Masuda¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

9:45 AM - 10:00 AM

[20a-E13-4] InN/YSZ-based field effect transistors

^○Masaaki Oseki¹, Atsushi Kobayashi¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (Institute of Industrial Science, The University of Tokyo¹, JST-CREST²)

10:00 AM - 10:15 AM

△ [20a-E13-5] High sensitivity extremely nitride-based hetero-field-effect-transistor-type photosensors with solar blind

^○（M1）Takuya Murase¹, Mami Isiguro¹, Tomoaki Yamada¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki² (Meijo Univ.¹, Akasaki Inst.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-E13-6] Exciton binding energy of AlN: Electron-hole exchange and exciton-phonon interactions

^○Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:45 AM - 11:00 AM

[20a-E13-7] Analysis of the Optical Spectra of V-doped AlN based on First-principles Calculations of Multiplet Structures

^○Saki Sonoda¹, Kazuyoshi Ogasawara², Yoshiaki Sakurai³ (Kyoto Inst. Tech.¹, Kwansei Gakuin Univ.², Osaka TRI³)

11:00 AM - 11:15 AM

[20a-E13-8] Photoluminescence from AlGaN-based quantum wells at higher temperatures

Yuya Hayakawa¹, Tomonori Fukuno¹, Katsuto Nakamura¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², ^○Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

11:15 AM - 11:30 AM

[20a-E13-9] Temperature Dependent Exciton Dynamics in Al-rich AlGaN/AlN Quantum Wells Assessed by Cathodoluminescence Mapping Measurements

^○Takao Oto¹, Yoshiya Iwata¹, David Gachet², Malik Benameur², Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹, Attolight AG²)

11:30 AM - 11:45 AM

△ [20a-E13-10] Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum wells

^○（D）Yoshiya Iwata¹, Takao Oto¹, David Gachet², Malik Benameur², Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Dept. of Electronic Sci. and Eng., Kyoto Univ.¹, Attolight AG²)

Oral presentation

[20p-E13-1~8] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:00 （11:45 AM - 1:00 PM）

1:00 PM - 1:15 PM

△ [20p-E13-1] Optical characteristics of InGaN films grown by pulsed sputtering

^○Kohei Ueno¹, Hidenari Noguchi², Jitsuo Ohta², Hiroshi Fujioka^2,3, Masaharu Oshima¹ (The Univ. of Tokyo¹, IIS, The Univ. of Tokyo², JST-CREST³)

1:15 PM - 1:30 PM

[20p-E13-2] Dependence of radiative and nonradiative recombination lifetime on excitation energy density in InGaN/GaN multiple quantum wells

^○Hideaki Murotani¹, Toko Sugiura¹, Yoichi Yamada², Yoshio Honda³, Hiroshi Amano³ (Toyota Natl. Coll. Technol.¹, Yamaguchi Univ.², Nagoya Univ.³)

1:30 PM - 1:45 PM

△ [20p-E13-3] Spatial distribution of photoluminescence in InGaN single quantum wells on semipolar (11\overline{2}2) GaN substrates assessed by scanning near field optical microscopy

^○Takuya Ozaki¹, Junichi Nishinaka¹, Akio Kaneta¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

1:45 PM - 2:00 PM

[20p-E13-4] Observation of ultra fast dynamics in InN films by degenerated pump and probe technique

^○Daichi Imai¹, Ken Morita¹, Katsuki Tsukahara¹, Yoshihiro Ishitani¹, Bei Ma¹, Xinqiang Wang², kazuhide Kusakabe³, Akihiko Yoshikawa³ (Chiba. Univ¹, Peking Univ.², Chiba Univ. SMART³)

2:00 PM - 2:15 PM

△ [20p-E13-5] Carrier and phonon transport properties in determination of nonradiative carrier recombination rate in InN

^○Daichi Imai¹, Yoshihiro Ishitani¹, Xinqiang Wang², Kazuhide Kusakabe³, Akihiko Yoshikawa³, Ken Morita¹, Bei Ma¹ (Graduate school of Engineering, Chiba Univ.¹, School of Physics, Peking Univ.², Center for SMART GIR, Chiba Univ.³)

2:15 PM - 2:30 PM

△ [20p-E13-6] Raman measurements of GaN outer most surface use of electrical field enhancement effect obtained by Ag nanoparticles

^○Ryosuke Imai¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Takahiro KIjima¹, Shotaro Yamamoto¹, Atsushi Ogura¹ (Meiji Univ¹)

2:30 PM - 2:45 PM

[20p-E13-7] Direct Measurement of Carrier Dynamics in GaN by Time-resolved PL Spectroscopy

^○Hitoshi Manabe¹, Kohei Kawakami¹, Hiroki Goto², Haruo Sunakawa², Toshiharu Matsueda², Akiko Okada³, Hidetoshi Shinohara⁴, Hiroshi Goto⁴, Jun Mizuno³, Akira Usui², A. Atsushi Yamaguchi¹ (Kanazawa Inst. of Tech.¹, Furukawa Co. Ltd.², Waseda Univ.³, Toshiba Machine Co. Ltd.⁴)

2:45 PM - 3:00 PM

[20p-E13-8] Analysis of exciton momentum and recombination processes in GaN based on phonon replica spectra

^○Kenji Takahashi¹, Kei Gotou¹, Daichi Imai¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², Kazumasa Hiramatsu², Bei Ma¹ (Chiba Univ.¹, Mie Univ.²)

Poster presentation

[20a-PG1-1~17] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:30 AM - 11:30 AM PG1 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[20a-PG1-1] Heteroepitaxial Growth and Electric Properties of ScN Films on Sapphire Substrates

^○Takeshi Ohgaki¹, Ken Watanabe¹, Isao Sakaguchi¹, Naoki Ohashi¹, Hajime Haneda¹ (NIMS¹)

9:30 AM - 11:30 AM

[20a-PG1-2] GaN selective growth of Liquid Phase Electroepitaxy using aluminum oxide mask

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Muneki Iwakawa¹, Yousuke Mizuno¹, Junpei Yamada¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

9:30 AM - 11:30 AM

[20a-PG1-3] Numerical simulation of ammonothermal GaN bulk single crystal process with considering different Rayleigh number

^○Yoshio Masuda¹, Daisuke Tomida², Chiaki Yokoyama² (AIST¹, IMRAM Tohoku Univ.²)

9:30 AM - 11:30 AM

[20a-PG1-4] Growth and Characterization on Mg doped p-InAlN

^○（M1）Tatsuya Ito¹, Arata Watanabe¹, Kentaro Mori¹, Yuta Onoda¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[20a-PG1-5] Realization of high hole concentration using polarization in AlGaN/GaN superlattice

^○Takahiro Ishii¹, Yoshio Honda¹, Masahito Yamaguchi¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

9:30 AM - 11:30 AM

[20a-PG1-6] Study on Local Spectra of Al_xGa_1-xN Epitaxial Films with Different Al Content by Cathodoluminescence Method

^○Satoshi Kurai¹, Naoki Goda¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

9:30 AM - 11:30 AM

[20a-PG1-7] XPS analysis of carbonized Si surface using AlGaN/GaN crystal growth

^○（M2）Tatsuya Sakamoto^1,2, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Akinori Ubukata³, Takayuki Satou³, Toshiya Tabuchi³, Yoshifumi Takanashi¹ (Tokyo University of Science¹, AIST², Taiyo Nippon Sanso Corporation³)

9:30 AM - 11:30 AM

[20a-PG1-8] Electrical Characterization of Thick InGaN Films by Mercury-Probes

^○Yoshitaka Nakano¹, Fumio Hasegawa¹, Sang Liwen², Masatomo Sumiya² (Chubu Univ.¹, NIMS²)

9:30 AM - 11:30 AM

[20a-PG1-9] Reduction of efficiency droop in InGaN LEDs on low dislocation density GaN substrate

^○（DC）Kouhei Yamashita¹, Tomohiko Sugiyama³, Makoto Iwai³, Yoshio Honda¹, Takashi Yoshino³, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center², NGK Insulator LTD.³)

9:30 AM - 11:30 AM

[20a-PG1-10] Fabrication of InGaN based LED structure using freestanding {20-21}GaN substrate

^○Yusho Denpo¹, Yusuke Mitsui¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School.& Eng., Yamaguchi Univ.¹)

9:30 AM - 11:30 AM

[20a-PG1-11] Study on quality improvement of semi-polar (1-101) InGaN / GaN MQW by introducing relaxation layer on a processing Si substrate

^○Yasukazu Sone¹, Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Lab.²)

9:30 AM - 11:30 AM

△ [20a-PG1-12] Investigation of laser scribing method for improvement of nitride-based blue LEDs

^○（B）Shun Hanai¹, Atsushi Suzuki^1,2, Tsukasa Kitano^1,2, Shinya Umeda¹, Takahisa Kato¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,3 (Meijo Univ.¹, Elseed.², Akasaki Research Center³)

9:30 AM - 11:30 AM

[20a-PG1-13] RF-MBE growth of GaInN and fabrication of pn-homojunction-type blue-green LED

^○（B）Kento Narutani¹, Tomohiro Yamaguchi¹, Ke Wang², Tsutomu Araki², Yasushi Nanishi², Liwen Sang³, Masatomo Sumiya³, Shuhei Fujioka¹, Takeyoshi Onuma^4,1, Tohru Honda¹ (Kogakuin Univ.¹, Ritsumeikan Univ.², NIMS³, TNCT⁴)

9:30 AM - 11:30 AM

[20a-PG1-14] RF-MBE Growth of AlN on a Sapphire Substrate using an AlON Buffer Layer

^○Toshiki Makimoto¹, Kazuhide Kumakura², Michiya Maeda¹, Yuki Kobayashi¹, Hideki Yamamoto², Yoshiji Horikoshi¹ (Waseda Univ.¹, NTT Basic Research Lab.²)

9:30 AM - 11:30 AM

[20a-PG1-15] Growth of GaN layers on GaAs(110) by RF-MBE

^○（M2）Takeshi Ikarashi¹, Misao Orihara¹, Syuhei Yagi¹, Yasuto Hijikata¹, Shigeyuki Kuboya², Ryuji Katayama², Hiroyuki Yaguchi¹ (Saitama Univ.¹, Tohoku Univ.²)

9:30 AM - 11:30 AM

[20a-PG1-16] Effect of N2 micro plasma treatment on initial growth of GaN by MOMBE

^○Yohei Suzuki¹, Shota Uchiyama¹, Takahiro Maruyama¹, Shigeya Naritsuka¹, Kazuo Shimizu², Yuuta Noma², Shougo Kaneda² (Meijo Univ.¹, Shizuoka Univ.²)

9:30 AM - 11:30 AM

[20a-PG1-17] Study of annealing effect on GaN thin films prepared by room temperature RF sputtering

Shinpei Aoto¹, ^○Hideyuki Toyota¹, Tomoya Shibata¹, Shinji Saito², Naotaka Uchitomi¹ (Nagaoka Univ. of Tech.¹, Toshiba R&D center²)

Sessions

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-E13-1~11] 15.4 III-V-group nitride crystals

△ [17a-E13-4] Study of the high reflective Ag electrode on p-type GaN

△ [17a-E13-5] Evaluation of electron blocking layer in blue-LED by direct measurement of electron overflow

△ [17a-E13-6] Investigation of hole injections in Ultra-Violet light emitting diodes by polarization engineering

△ [17a-E13-7] Highly efficient LEDs on nitride-based tunnel junction

△ [17a-E13-8] Current confinement structures with buried nitride-based tunnel junctions

△ [17a-E13-10] Dislocation density dependence of GaInN/GaN heterostructure

△ [17a-E13-11] Suppression of Metastable-Phase Inclusion in MOVPE-Grown －c-plane InGaN/GaN Multiple Quantum Wells

[17p-E13-1~18] 15.4 III-V-group nitride crystals

▲ [17p-E13-1] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN (x〜0.3) (I): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

▲ [17p-E13-2] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN(x〜0.3) (II) Suppression of the phase separation

△ [17p-E13-4] Characterization of heterogeneity on GaInN films by fluorescence microscope and secondary ion mass spectrometry

▲ [17p-E13-6] Improvement of Junction Properties of SMART Solar Cells grown by RF-MBE

△ [17p-E13-7] Application to flame sensor of nitride-based hetero-field-effect-transistor-type UV photosensors

△ [17p-E13-15] Fabrication of InGaN/GaN Nanowire Quantum Dots by Selective-Area MOCVD

▲ [17p-E13-18] Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots

[18a-E13-1~11] 15.4 III-V-group nitride crystals

△ [18a-E13-6] Investigation of high-temperature sputtered-AlN buffer layer

△ [18a-E13-7] Orientation improvement of the sputtered AlN on Si by the Ti pre-orientation layer

△ [18a-E13-8] MOVPE Growth of GaN on ScAlMgO4 Substrate

▲ [18a-E13-11] Selective growth of N-face GaN (000-1) by group-III-source flow-rate modulation epitaxy

[18p-E13-1~18] 15.4 III-V-group nitride crystals

△ [18p-E13-4] The Relationship between Growth Habit and the Behavior of Dislocations of GaN Crystals in the Na-Flux Coalescence Growth

△ [18p-E13-11] Thermal cleaning of free-standing GaN substrates

△ [18p-E13-12] Study on carrier dynamics and piezoelectricity of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

△ [18p-E13-13] Homo-epitaxial growth on trench patterned AlN free-standing substrate by HVPE

[19a-E13-1~11] 15.4 III-V-group nitride crystals

▲ [19a-E13-1] Radiation Properties of M-plane AlGaN MQW Light-Emitting Diodes

△ [19a-E13-2] Influences on the lattice-relaxation layer of AlGaN multiple quantum wells on sapphire

△ [19a-E13-3] Development of Vertical-type Deep Ultraviolet LED on n+Si substrate(2)

△ [19a-E13-5] In-plane Polarization Control of Semipolar AlGaN/AlN Quantum Wells

△ [19a-E13-6] High growth rate of high quality AlInN by MOVPE

△ [19a-E13-7] Nitride-based distributed Bragg reflectors with AlInN grown at high growth rate

△ [19a-E13-9] Coherent Growth of Semipolar (11-22) InGaN/AlGaN Stress-Compensated Superlattices

▼ [19a-E13-11] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation

[20a-E13-1~10] 15.4 III-V-group nitride crystals

△ [20a-E13-5] High sensitivity extremely nitride-based hetero-field-effect-transistor-type photosensors with solar blind

△ [20a-E13-10] Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum wells

[20p-E13-1~8] 15.4 III-V-group nitride crystals

△ [20p-E13-1] Optical characteristics of InGaN films grown by pulsed sputtering

△ [20p-E13-3] Spatial distribution of photoluminescence in InGaN single quantum wells on semipolar (11\overline{2}2) GaN substrates assessed by scanning near field optical microscopy

△ [20p-E13-5] Carrier and phonon transport properties in determination of nonradiative carrier recombination rate in InN

△ [20p-E13-6] Raman measurements of GaN outer most surface use of electrical field enhancement effect obtained by Ag nanoparticles

[20a-PG1-1~17] 15.4 III-V-group nitride crystals

△ [20a-PG1-12] Investigation of laser scribing method for improvement of nitride-based blue LEDs

△ [18a-E13-8] MOVPE Growth of GaN on ScAlMgO₄ Substrate

△ [19a-E13-3] Development of Vertical-type Deep Ultraviolet LED on n⁺Si substrate(2)