Poster presentation

[25p-P06-1~5] 15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 25, 2022 1:30 PM - 3:30 PM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[25p-P06-1] Three-dimensional visualization of the curvature of crystal planes in wide bandgap semiconductor wafers using X-ray diffraction

〇Yongzhao Yao¹, Keiichi Hirano², Koji Sato¹, Yoshihiro Sugawara¹, Daisaku Yokoe¹, Narihito Okada³, Kazuyuki Tadatomo³, Kohei Sasaki⁴, Akito Kuramata⁴, Yukari Ishikawa¹ (1.JFCC, 2.KEK, 3.Yamaguchi Univ., 4.NCT)

1:30 PM - 3:30 PM

[25p-P06-2] Fabrication of heavily-doped Si layer for semiconductor based spin devices

〇Mizue Ishikawa¹ (1.Nihon Univ. College of Engineering)

1:30 PM - 3:30 PM

[25p-P06-3] Structural Analyses by TEM for a-In₂O₃ Grown by Mist CVD on a-Al₂O₃Substrate

〇(M2)Yuka Hayakawa¹, Soichiro Ohno¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Toyohiko Konno² (1.Kogakuin Univ., 2.Tohoku Univ.)

1:30 PM - 3:30 PM

▲ [25p-P06-4] TEM study of structural features of Kanazawa gold leaves

〇(M2)Yuanzhe Xu¹, Kohei Aso¹, Hideyuki Murata¹, Yoshifumi Oshima¹ (1.Japan Adv.Inst.Sci.)

1:30 PM - 3:30 PM

[25p-P06-5] Effect of ion implantation/thermal annealing on 0.88 eV hole trap in p-GaN grown by MOVPE

〇Yutaka Tokuda¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tech., 2.Nagoya Univ., 3.SHI-ATEX Co., Ltd.)

Oral presentation

[26a-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 9:00 AM - 12:00 PM E104 (E104)

Hidetoshi Suzuki(Miyazaki Univ.), Haruo Sudo(GlobalWafers), Yuji Mukaiyama(STR Japan)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[26a-E104-1] Evaluation of influence of process parameters on interstitial oxygen concentration in Czochralski grown Si crystals using machine learning

〇Kentaro Kutsukake¹, Hironori Banba², Yuta Nagai² (1.RIKEN, 2.Global Wafers Japan)

9:15 AM - 9:30 AM

[26a-E104-2] Prediction of preferential growth modes of large-scale vacancy clusters in Si crystal using an ANN interatomic potential

〇Yusuke Noda¹, Takuto Ushiro², Tatsuya Yokoi³, Eiji Kamiyama¹, Masato Ohbitsu², Hiroki Nagakura², Koji Sueoka¹ (1.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Graduate School of Computer Science and Systems Engineering, Okayama Pref. Univ., 3.Graduate School of Engineering, Nagoya Univ.)

9:30 AM - 9:45 AM

[26a-E104-3] Formation energy prediction of large-scale finite-sized extended interstitial defects in Si crystal using an ANN interatomic potential

〇Yusuke Noda¹, Masato Ohbitsu², Tatsuya Yokoi³, Eiji Kamiyama¹, Takuto Ushiro², Hiroki Nagakura², Koji Sueoka¹ (1.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Graduate School of Computer Science and Systems Engineering, Okayama Pref. Univ., 3.Graduate School of Engineering, Nagoya Univ.)

9:45 AM - 10:00 AM

[26a-E104-4] Considerations for aggregation of self-interstitials in Si crystal

〇Eiji Kamiyama¹, Yusuke Noda¹, Masato Ohbitsu², Takuto Ushiro², Tatsuya Yokoi³, Koji Sueoka¹ (1.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Graduate School of Computer Science and Systems Engineering, Okayama Pref. Univ., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [26a-E104-5] Development of ANN potential for Si(100) surface and validation of calculation accuracy

〇Masayoshi Sato¹, Masato Ohbitsu¹, Takuto Ushiro¹, Yusuke Noda², Koji Sueoka² (1.Graduate School of Engineering, Okayama pref. Univ., 2.Okayama Pref. Univ.)

10:15 AM - 10:30 AM

△ [26a-E104-6] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru Kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO Corporation)

10:30 AM - 10:45 AM

[26a-E104-7] Quantum annealing applied to ionic diffusion analysis

Keishu Utimula¹, Tom Ichibha², Kenta Hongo³, Kousuke Nakano^5,4, 〇Ryo Maezono⁴ (1.JAIST, Mater. Sci., 2.Oakridge Ntnl. Lab., 3.JAIST, RCACI, 4.JAIST, Info. Sci., 5.SISSA)

11:00 AM - 11:15 AM

[26a-E104-8] Dislocation density analysis of a-, c-, and m-Al₂O₃ by 3-D numerical analysis

〇Koichi Kakimoto¹, Satoshi Nakano¹ (1.RIAM, Kyushu Univ.)

11:15 AM - 11:30 AM

[26a-E104-9] A trial of dislocation density analysis of β-Ga₂O₃ by 3-D numerical analysis

〇Koichi Kakimoto¹, Satoshi Nakano¹, Yongzhao Yao², Isao Takahashi³, Akira Yoshikawa⁴ (1.RIAM, Kyushu Univ., 2.JFCC, 3.C&A Co. Ltd, 4.IMR, Tohoku Univ.)

11:30 AM - 11:45 AM

[26a-E104-10] Investigation of the effect of multicrystalline Si nano-facet structure on dislocation generation by stress analysis

Kenta Yamakoshi¹, 〇Yutaka Ohno², Kentaro Kutsukake³, Takuto Kojima⁴, Hiroaki Kudo⁴, Hiroyuki Tanaka¹, Noritaka Usami¹ (1.GSE, Nagoya Univ., 2.IMR, Tohoku Univ., 3.AIP, RIKEN, 4.GSI, Nagoya Univ.)

11:45 AM - 12:00 PM

[26a-E104-11] Thermal behavior of hydrogen and oxygen in boron-doped CZ silicon wafer

〇Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Shunsuke Heito², Hidetaka Takato¹ (1.AIST, 2.KYOCERA)

Oral presentation

[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 26, 2022 1:30 PM - 4:30 PM E104 (E104)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Hiroyuki Tsubota(GlobalWafers Japan)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[26p-E104-1] Effects of Hydrogen Treatment on Piezoresistance Coefficients of Ge

〇Kazunori Matsuda¹, Masashi Yamamoto², Michio Mikawa², Shiro Nagaoka², Kouji Tanigawa¹, Takashi Kunimoto¹, Kazuo Tsutsui³ (1.Tokushima Bunri Univ., 2.NIT Kagawa, 3.Tokyo Inst. Tech.)

1:45 PM - 2:00 PM

[26p-E104-2] Influence of surface structure by carbon coating of high-dose implanted/annealed SiC

〇Kotaro Ishiji¹, Makoto Arita², Mariko Adachi³ (1.SAGA-LS, 2.Kyushu Univ., 3.Nanophoton)

2:00 PM - 2:15 PM

[26p-E104-3] Characterization of surface carrier recombination lifetime of GaAs (110) using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Kazunobu Kojima¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

2:15 PM - 2:30 PM

[26p-E104-4] Analysis of μ-PCD Decay Curve Considering Surface Recombination

〇Shuto Fumoto¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO Corporation)

2:45 PM - 3:00 PM

[26p-E104-5] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (I)
-Reduction of SiO₂/Si Interface State using CH₃O-Molecular-Ion-Implanted Wafers-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:00 PM - 3:15 PM

[26p-E104-6] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (II)
– Photoemission Spectroscopy Study on Variation in SiO₂/Si Interfacial Strain with Annihilation of Interface State Defects –

〇Akihiro Suzuki¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Koji Kobayashi¹, Ryo Hirose¹, Ayumi Masada¹, Yoshihiro Koga¹, Kazutoshi Takahashi², Kazunari Kurita¹ (1.SUMCO CORPORATION, 2.Synchrotron Light Application Center, Saga Univ.)

3:15 PM - 3:30 PM

[26p-E104-7] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (III)
–Analysis of Recrystallization Behavior of Hydrocarbon Molecular Ion Implanted Si wafer Surface Using X-ray Photoelectron Spectroscopy–

〇kouji kobayashi¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Ryo Hirose¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:30 PM - 3:45 PM

[26p-E104-8] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (Ⅳ)
– Effect of carbon on gettering capability in Si-based molecular ion implantation –

〇Ryo Hirose¹, Takeshi Kadono¹, Ayumi Onaka-Masada¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

3:45 PM - 4:00 PM

[26p-E104-9] Quality of silicon substrate and point defects
(7) Six fundamental equation sets for understanding and control of defects

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:00 PM - 4:15 PM

[26p-E104-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(20) Database of local vibration modes of N-complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:15 PM - 4:30 PM

[26p-E104-11] Measurement of carbon concentration in silicon crystal
(24) Infrared absorption measurement using the internet and template

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ. Radiation Research Center)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[25p-P06-1~5] 15.7 Crystal characterization, impurities and crystal defects

[25p-P06-1] Three-dimensional visualization of the curvature of crystal planes in wide bandgap semiconductor wafers using X-ray diffraction

[25p-P06-2] Fabrication of heavily-doped Si layer for semiconductor based spin devices

[25p-P06-3] Structural Analyses by TEM for a-In₂O₃ Grown by Mist CVD on a-Al₂O₃Substrate

▲ [25p-P06-4] TEM study of structural features of Kanazawa gold leaves

[25p-P06-5] Effect of ion implantation/thermal annealing on 0.88 eV hole trap in p-GaN grown by MOVPE

[26a-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

[26a-E104-1] Evaluation of influence of process parameters on interstitial oxygen concentration in Czochralski grown Si crystals using machine learning

[26a-E104-2] Prediction of preferential growth modes of large-scale vacancy clusters in Si crystal using an ANN interatomic potential

[26a-E104-3] Formation energy prediction of large-scale finite-sized extended interstitial defects in Si crystal using an ANN interatomic potential

[26a-E104-4] Considerations for aggregation of self-interstitials in Si crystal

△ [26a-E104-5] Development of ANN potential for Si(100) surface and validation of calculation accuracy

△ [26a-E104-6] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals

[26a-E104-7] Quantum annealing applied to ionic diffusion analysis

[26a-E104-8] Dislocation density analysis of a-, c-, and m-Al₂O₃ by 3-D numerical analysis

[26a-E104-9] A trial of dislocation density analysis of β-Ga₂O₃ by 3-D numerical analysis

[26a-E104-10] Investigation of the effect of multicrystalline Si nano-facet structure on dislocation generation by stress analysis

[26a-E104-11] Thermal behavior of hydrogen and oxygen in boron-doped CZ silicon wafer

[26p-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

[26p-E104-1] Effects of Hydrogen Treatment on Piezoresistance Coefficients of Ge

[26p-E104-2] Influence of surface structure by carbon coating of high-dose implanted/annealed SiC

[26p-E104-3] Characterization of surface carrier recombination lifetime of GaAs (110) using time-resolved two-photon photoemission spectroscopy

[26p-E104-4] Analysis of μ-PCD Decay Curve Considering Surface Recombination

[26p-E104-5] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (I)
-Reduction of SiO₂/Si Interface State using CH₃O-Molecular-Ion-Implanted Wafers-

[26p-E104-6] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (II)
– Photoemission Spectroscopy Study on Variation in SiO₂/Si Interfacial Strain with Annihilation of Interface State Defects –

[26p-E104-7] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (III)
–Analysis of Recrystallization Behavior of Hydrocarbon Molecular Ion Implanted Si wafer Surface Using X-ray Photoelectron Spectroscopy–

[26p-E104-8] Product Design of Silicon Wafers for 3D Stacked CMOS Image Sensor (Ⅳ)
– Effect of carbon on gettering capability in Si-based molecular ion implantation –

[26p-E104-9] Quality of silicon substrate and point defects
(7) Six fundamental equation sets for understanding and control of defects

[26p-E104-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(20) Database of local vibration modes of N-complexes

[26p-E104-11] Measurement of carbon concentration in silicon crystal
(24) Infrared absorption measurement using the internet and template

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