[D-6-3] An Electron Counting Detector for CCD Image Sensors

Shinji OOSAWA, Yoshiyuki MATSUNAGA, Sohei MANABE, Nozomu HARADA (1.ULSI Research Center, Toshiba Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Analysis of Charge Transfer Loss in Dual Read-Out Registers Used for HDTV CCD Image Sensor

Mamoru IESAKA, Shinji OSAWA, Shinji UYA, Yoshitaka EGAWA, Yoshiyuki MATSUNAGA, Sohei MANABE, Nozomu HARADA (1.ULSI Research Center, Toshiba Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] GaInAsP on Si Substrates and Its Device Application

Manijeh RAZEGHI (1.THOMSON C. S. F. -L. C. R. -B. P.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] The Self-Limited Growth in InP Epitaxy by Alternate Gas Supply

Yoshiki SAKUMA, Kunihiko KODAMA, Masashi OZEKI (1.Fujitsu Laboratories Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] RHEED Studies on TEGa Decomposition during TEGa-As4 Alternate Supply Growth of GaAs

Makoto UNETA, Yoshio WATANABE, Yoshiro OHMACHI (1.NTT Applied Electronics Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy

Michio Sato, Yoshiji Horikoshi (1.NTT Basic Research Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Chloride Atomic Layer Epitaxy of InGaP

Akira Usui, Haruo Sunakawa (1.Fundamental Research Laboratories, NEC Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] New VPE Method of AlGaAs by Direct Reaction between AlCl3, GaCl3 and AsH3/H2

H. Yamaguchi, R. Kobayashi, Y. Jin, F. Hasegawa (1.Institute of Materials Science, University of Tsukuba)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] High Quality AlGaInP/GaInP/GaAs Heterostructures for Optical and Electrical Devices

J. P. Andre, E. Augarde, E. Dupont-Nivet, J. N. Patillon, P. Riglet, N. Mariel, D. Moroni A. Valster (1.L.E.P., 2.Philips Research Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] Stress-Released MBE Growth of GaAs on Si (001) with a Si-GaAs Superlattice Buffer

Kazuto OGASAWARA, Kazuo KONDO (1.Fujitsu Laboratories Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download