Oral presentation

[19p-D3-1~14] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 2:00 PM - 5:45 PM D3 (D114)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[19p-D3-1] Interstitial Channels that Control Band Gaps and Effective Masses in Covalent Semiconductors

^○Yu-ichiro Matsushita^1,2, Atsushi Oshiyama¹ (The Univ. of Tokyo¹, Max-Planck Inst.²)

2:15 PM - 2:30 PM

[19p-D3-2] Characterization of band structure of K₈Ga₈Si₃₈ clathrate by optical reflectance

^○Masaru Iioka¹, Haruhiko Udono¹, Motoharu Imai², Masato Aoki³ (Ibaraki Univ.¹, NIMS², Gifu Univ.³)

2:30 PM - 2:45 PM

[19p-D3-3] Raman Scattering of Y_2(1-x)Tb_2xO₃ Mixed-Crystals

^○Yutaro Chibana¹, Hirotaka Naruse¹, Hisaya Oda¹, Akio Yamanaka¹ (CIST¹)

2:45 PM - 3:00 PM

[19p-D3-4] Optical Constants of RF-Sputter-Deposited Zn₃N₂ Films

^○（M2）Tomoaki Shitara¹, Kouhei Sakurai¹, Takayuki Miyazaki¹, Sadao Adachi¹ (Gunma University¹)

3:00 PM - 3:15 PM

[19p-D3-5] Evaluation of the electrical characteristics and reciprocal space map measurements of diluted magnetic semiconductor GaGdAs:Si

^○Yoshiyuki Onishi¹, Syoutarou Matsumoto¹, Nakaba Funaki¹, Hayato Miyagawa¹, Syun Koshiba¹, Noriaki Tsurumachi¹, Syunsuke Nakanishi¹ (Kagawa Univ¹)

3:15 PM - 3:30 PM

[19p-D3-6] Observation of magnesium evaporation during the solid-phase synthesis of Mg2Si film by annealing in the argon gas atmosphere

^○Takashi Ikehata¹, Yuta Takagi¹, Takuya Yamamoto¹, Getsu Cho¹, Naoyuki Sato¹, Haruhiko Udono¹ (Ibaraki Univ.¹)

3:30 PM - 3:45 PM

[19p-D3-7] RBS Study of Behavior of Cu Diffusion in β-FeSi₂

^○Yuuya Noguchi¹, Tatsuya Mizuki¹, Yuki Kawakubo¹, Tomoaki Hirata¹, Seiya Kagawa¹, Tomohiro Nagatsuyu¹, Ryotaro Iwamoto¹, Kohei Shibahara¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (Kyutech¹, JAEA ASRC²)

3:45 PM - 4:00 PM

△ [19p-D3-8] Enhancement of IR-light emission from β-FeSi₂ nanocrystals by Cu doping

^○Tomoaki Hirata¹, Seiya Kagawa¹, Tomohiro Nagatsuyu¹, Kohei Shibahara¹, Ryotaro Iwamoto¹, Yuki Kawakubo¹, Yuuya Noguchi¹, Tatsuya Mizuki¹, Kazumasa Narumi², Seiji Sakai², Yoshihito Maeda^1,2 (Kyutech. CSE¹, JAEA ASRC²)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[19p-D3-9] Investigation of surface Fermi level in β-FeSi₂ epitaxial films by Franz-Keldysh oscillations

^○（B）Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

4:30 PM - 4:45 PM

[19p-D3-10] Sputtering growth of β-FeSi₂ polycrystalline films with low carrier density and conduction mechanism

^○（B）Tetsu Hattori¹, Takahiko Higashi¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

4:45 PM - 5:00 PM

[19p-D3-11] Thickness – dependent electrical characterization of β-FeSi₂

^○Takafumi Kato¹, Taichi Inamura¹, Akito Sasaki³, Katsuaki Aoki³, kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², hitoshi Wakabayashi², kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE², Toshiba Material Co., LTD³)

5:00 PM - 5:15 PM

[19p-D3-12] High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma

^○Hai Zhang¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ¹, Nagoya Univ. VBL², Hiroshima Univ.³)

5:15 PM - 5:30 PM

[19p-D3-13] Hydrogen-Evolution by Photocatalyst β-FeSi₂ on Si-powder

^○Kensuke Akiyama¹, Ryo Takahashi¹, Masaharu Yoshimizu², Hiroshi Funakubo³, Hiroshi Irie², Yoshihisa Matsumoto¹ (Kanagawa Ind. Tech. Cen.¹, Univ. of Yamanashi², Tokyo Inst. of Tech.³)

5:30 PM - 5:45 PM

[19p-D3-14] Ion channeling analysis of axial orientation of Fe₃Si on Si(111) heterointerface

^○Yuki Kawakubo¹, Yuuya Noguchi¹, Tatsuya Mizuki¹, Kazumasa Narumi², Seiji Sakai², Kohei Hayama³, Masanobu Miyao³, Yoshihito Maeda^1,2 (Kyutech¹, JAEA ASRC², Kyushu Univ.³)

Poster presentation

[19a-PG3-1~13] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PG3 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PG3-1] Temperature dependence of Raman spectra in β-FeSi₂ thin films

^○Haruki Yamaguchi¹, Hiroaki Tsukamoto¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

9:30 AM - 11:30 AM

[19a-PG3-2] Investigation of photoreflectance spectra in β-FeSi^{2 polycrystalline films}

^○Takahiko Higashi¹, Tetsu Hattori¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹ (Kagoshima Univ.¹)

9:30 AM - 11:30 AM

[19a-PG3-3] Resistivity Dependence of -FeSi2 on Annealing Temperature

^○Taichi Inamura¹, Takafumi Kato¹, Akito Sasaki³, Katsuaki Aoki³, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE², Toshiba Material Co., LTD³)

9:30 AM - 11:30 AM

▲ [19a-PG3-4] Electric properties of Carbon doped β-FeSi2 /Si heterojunction photodiodes

^○Tarek Mostafa¹, Suguru Funasaki¹, Motoki Takahara¹, Shaban Mahmoud¹, Tsuyoshi Yoshitake¹ (Kyushu University¹)

9:30 AM - 11:30 AM

[19a-PG3-5] Fabrication and characterization of Mg₂Si pn-junction photodiode with circular electrode

Masaaki Takezaki¹, ^○Kenta Daitoku¹, Syuntaro Tanikawa², Daiju Tsuya², Haruhiko Udono¹ (Ibaraki Univ¹, NIMS²)

9:30 AM - 11:30 AM

[19a-PG3-6] Lattice parameter and thermal conductivity of melt-grown Mg2Si doped with Bi and Sb

^○Hideaki Otake¹, Shin Hasunuma¹, Haruhiko Udono¹ (Ibaraki Univ.¹)

9:30 AM - 11:30 AM

[19a-PG3-7] Solid phase growth of Mg₂Si thin films on poly-Si/glass substrates prepared by AIC

^○Satoru Kawaguchi¹, Sho Hidaka¹, Tetsuya Hashimoto¹, Hiroshi Katsumata¹ (Meiji University¹)

9:30 AM - 11:30 AM

▲ [19a-PG3-8] Si-based Nanosheet Bundle Synthesized using CaSi₂/Si Substrates

Erchao Meng¹, Haruo Imagawa², Xiang Meng¹, Kaito Nakane¹, Yuya Shirahashi¹, Yusuke Sato¹, Hiroaki Suzuki¹, Hiroshi Itahara², ^○Hirokazu Tatsuoka¹ (Shizuoka Univ.¹, Toyota Central R&D Labs.,Inc.²)

9:30 AM - 11:30 AM

[19a-PG3-9] Search for ternary Si Clathrates

^○Motoharu Imai¹, Shiva Kumar Singh¹ (NIMS¹)

9:30 AM - 11:30 AM

[19a-PG3-10] Synthesis and physical properties of Li5SiN3 as a cathode material of lithium secondary batteries

^○（B）Yusaku Takeuchi¹, Taiki Yamashita¹, Kazuo Kuriyama¹, Kazumasa Kushida² (Hosei Univ.¹, Osaka Kyoiku Univ.²)

9:30 AM - 11:30 AM

[19a-PG3-11] Ga doping effects in GaMnAs2 thin films grown by molecular beam epitaxy

Takashi Uchiyama¹, Hiroto Oomae¹, Hideyuki Toyota¹, ^○Takahiro Kato¹, Naokata Uchitomi¹ (Nagaoka. Univ. Tech¹)

9:30 AM - 11:30 AM

[19a-PG3-12] Crystal structure and electrical property of a novel plumbide, Na₂MgPb

^○Takahiro Yamada¹, Takuji Ikeda², Hisanori Yamane¹ (IMRAM Tohoku Univ.¹, AIST²)

9:30 AM - 11:30 AM

[19a-PG3-13] Emission and Excitation spectrum of a-CN_x

^○Kazutoshi Fukui¹, Daiki Itoh¹, Kohji Yamamoto², Kenta Kamemoto³, Keniti Takarabe³, Shigeyuki Nakamura⁴, Masaki Satake⁵, Kunio Itoh⁵, Shiniti Yamamoto⁵ (Fac. of Engi., Univ. of Fukui¹, FIR Center, Univ. of Fukui², Fac. of Sci., Okayama Univ. Sci.³, Tsuyama Nat. Col. Tech.⁴, Fac. of Engi., Ryukoku Univ.⁵)

Oral presentation

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [20a-D3-1] Formation of B-doped BaSi₂ films by RF sputtering on a heated glass substrate

^○（M1）Nurul Amal AbdulLatiff¹, Takahiro Yoneyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys. Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

9:15 AM - 9:30 AM

[20a-D3-2] As Ion Implantation and High-Temperature Annealing of BaSi₂ Epitaxial Films

^○Kosuke Hara^1,2, Noritaka Usami^1,2, Masakazu Baba³, Kaoru Toko³, Takashi Suemasu^2,3 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

9:30 AM - 9:45 AM

[20a-D3-3] Evaluation of diffusion coefficients of P in MBE-grown BaSi₂ epilayers

^○（M1）Ning Zhang¹, Masakazu Baba¹, Weijie Du¹, Shintaro Koike¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST-JST²)

9:45 AM - 10:00 AM

[20a-D3-4] Surface potential distribution of B-doped p-type BaSi2 epitaxial thin films on Si(111)by Kelvin probe force microscopy

^○Masakazu Baba¹, Daichi Tsukahara¹, Du Weijie¹, Kaoru Toko¹, Kentaro Watanabe¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Univ. Nagoya², JST-CREST³)

10:00 AM - 10:15 AM

[20a-D3-5] Investigation of potential at grain boundaries in Sb-doped BaSi₂ thin-films by Kelvin probe force microscopy

^○Daichi Tsukahara¹, Masakazu Baba¹, Ryouta Takabe¹, Kaoru Tokou¹, Kentarou Watanabe¹, Kousuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ.Tsukuba¹, Univ.Nagoya², JST-CREST³)

10:15 AM - 10:30 AM

[20a-D3-6] Dependence of minority-carrier lifetime in undoped n-BaSi2 epitaxial films on their grain sizes

^○Ryota Takabe¹, Kosuke Hara², Masakazu Baba¹, Weijie Du¹, Kaoru Toko¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Nagoya Univ.², JST-CREST³)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▲ [20a-D3-7] I-V and C-V characteristics of the metal/undoped-BaSi₂ Schottky diodes

^○Weijie Du¹, Masakazu Baba¹, Ryouta Takabe¹, Ning Zhang¹, Shintaro Koike¹, Kaoru Toko¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Nagoya Univ.², JST-CREST³)

11:00 AM - 11:15 AM

[20a-D3-8] Characterization of defect levels in undoped n-BaSi₂ epitaxial films on Si(111) by deep level transient spectroscopy

^○Hiroki Takeuchi¹, Weijie Du¹, Masakazu Baba¹, Ryouta Takabe¹, Kaoru Tokoh¹, Takashi Suemasu^1,2 (Univ.Tsukuba¹, JST-CREST²)

11:15 AM - 11:30 AM

[20a-D3-9] A study on schottky structure solar cell using BaSi2.

^○Akito Sasaki¹, Katsuaki Aoki¹, Yoshinori Kataoka¹, Kumpei Kobayashi¹, Taichi Inamura², Kuniyuki Kakushima³, Hiroshi Iwai² (Toshiba Material¹, Tokyo Tech.FRC², Tokyo Tech IGSSE³)

11:30 AM - 11:45 AM

[20a-D3-10] Fabrication of BaSi₂ Thin Films on Si Substrates by Vacuum Deposition

^○（B）Yoshihiko Nakagawa¹, Kosuke Hara^1,2, Noritaka Usami^1,2, Takashi Suemasu^2,3 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

11:45 AM - 12:00 PM

△ [20a-D3-11] Fabrication of BaSi₂ Films on Glass Substrates by Vacuum Evaporation

^○Kosuke Hara^1,2, Yoshihiko Nakagawa¹, Noritaka Usami^1,2, Takashi Suemasu^2,3 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-D3-1~14] 14.1 Physical properties of exploratory materials

△ [19p-D3-8] Enhancement of IR-light emission from β-FeSi2 nanocrystals by Cu doping

[19a-PG3-1~13] 14.1 Physical properties of exploratory materials

▲ [19a-PG3-4] Electric properties of Carbon doped β-FeSi2 /Si heterojunction photodiodes

▲ [19a-PG3-8] Si-based Nanosheet Bundle Synthesized using CaSi2/Si Substrates

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

▲ [20a-D3-1] Formation of B-doped BaSi2 films by RF sputtering on a heated glass substrate

▲ [20a-D3-7] I-V and C-V characteristics of the metal/undoped-BaSi2 Schottky diodes

△ [20a-D3-11] Fabrication of BaSi2 Films on Glass Substrates by Vacuum Evaporation

△ [19p-D3-8] Enhancement of IR-light emission from β-FeSi₂ nanocrystals by Cu doping

▲ [19a-PG3-8] Si-based Nanosheet Bundle Synthesized using CaSi₂/Si Substrates

▲ [20a-D3-1] Formation of B-doped BaSi₂ films by RF sputtering on a heated glass substrate

▲ [20a-D3-7] I-V and C-V characteristics of the metal/undoped-BaSi₂ Schottky diodes

△ [20a-D3-11] Fabrication of BaSi₂ Films on Glass Substrates by Vacuum Evaporation