Poster presentation

[18p-PA7-1~2] 8.4 Plasma etching

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PA7 (アリーナ)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PA7-1] Surface analysis of n-GaN crystal damaged by UV assisted He plasma-etching

^○Masahito Niibe¹, Shodai Hirai¹, Retsuo Kawakami², Tatsuo Shirahama², Yoshitaka Nakano³, Takashi Mukai⁴ (Univ. Hyogo¹, Univ. Tokushima², Chubu Univ.³, Nichia Corp.⁴)

1:30 PM - 3:30 PM

[18p-PA7-2] Analysis on etching rate of silicon surface by hydrogen plasma based on first-principles calculations

^○Kouji Inagaki^1,2, Yoshitada Morikawa¹, Kiyoshi Yasutake^1,2 (Osaka Univ.¹, CREST-JST²)

Oral presentation

[19a-F6-1~6] 8.4 Plasma etching

Wed. Mar 19, 2014 11:00 AM - 12:30 PM F6 (F306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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11:00 AM - 11:15 AM

[19a-F6-1] Real-time / in-situ electron spin resonance analysis of surface reactions of poly(methyl-methacrylate) during plasma processes

^○（PC）Yudai Miyawaki¹, Haoran Wang¹, Kenji Ishikawa¹, Yusuke Kondo¹, Keigo Takeda¹, Hiroki Kondo¹, Hideo Horibe², Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Osaka City Univ.²)

11:15 AM - 11:30 AM

[19a-F6-2] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Oblique Incidence of Etch Byproducts Ions

^○（D）Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[19a-F6-3] Development of High Aspect Ratio TSV Etching Process for High-capacitor Fabrication

^○Takahide Murayama^1,2, Toshiyuki Sakuishi^1,2, Yasuhiro Morikawa^1,2, Koukou Suu^1,2 (NMEMS Technology Research Organization¹, ULVAC, Inc., Inst. of Semiconductor and Electronics Tech.²)

11:45 AM - 12:00 PM

[19a-F6-4] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas

^○（D）Nobuya Nakazaki¹, Haruka Matsumoto², Yoshinori Takao¹, Koji Eriguchi¹, kouichi Ono¹ (Kyoto Univ.¹, Kyoto Univ.²)

12:00 PM - 12:15 PM

[19a-F6-5] Study on plasma emission lights-surface interactions

^○Yan Zhang¹, Kenji Ishikawa¹, Makoto Sekine¹, Masanaga Fukasawa², Kazunori Nagahata², Shigetaka Tomiya², Tetsuya Tatsumi², Keigo Takeda², Hiroki Kondo¹, Masaru Hori¹ (Nagoya Univ.¹, Sony²)

12:15 PM - 12:30 PM

[19a-F6-6] CH₄/H₂ plasma etching on gallium nitride at high temperature

^○（M1）Takashi Kako¹, Zecheng Liu¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

Oral presentation

[19p-F6-1~18] 8.4 Plasma etching

Wed. Mar 19, 2014 2:00 PM - 7:00 PM F6 (F306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[19p-F6-1] Interface trap generation at SiO2/Si structure by CHxFy plasma etching

^○Takushi Shigetoshi¹, Masanaga Fukasawa¹, Kazunori Nagahata¹, Tetsuya Tatsumi¹ (Sony Corp.¹)

2:15 PM - 2:30 PM

△ [19p-F6-2] Dry Etching Properties of LaAlSiO_x

^○Kazuhisa Matsuda¹, Toshiyuki Sasaki¹, Mitsuhiro Omura¹, Hisataka Hayashi¹ (Toshiba S&S Co.¹)

2:30 PM - 2:45 PM

△ [19p-F6-3] Effects of metal carbonyls formation during ferromagnetic metal etching processes

^○Kohei Mizotani¹, Keita Miyake¹, Michiro Isobe¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (Osaka Univ.¹)

2:45 PM - 3:00 PM

△ [19p-F6-4] Etching reactions for transparent conducting films by CHx ions

^○Hu Li¹, Yu Muraki¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (Osaka Univ¹, Sony corporation²)

3:00 PM - 3:15 PM

△ [19p-F6-5] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (IV)

^○（DC）Yusuke Kondo¹, Yudai Miyawaki¹, Keigo Takeda¹, Hiroki Kondo¹, Satomi Tajima¹, Kenji Ishikawa¹, Toshio Hayashi¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

3:15 PM - 3:30 PM

△ [19p-F6-6] Instantaneous generation of many flaked particles in mass-production plasma etching equipment

^○Yuji Kasashima¹, Taisei Motomura¹, Natsuko Nabeoka¹, Fumihiko Uesugi¹ (AIST¹)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-F6-7] Mechanism of plasma etching on gallium nitride at high temperature (4)

^○（M2）Zecheng Liu¹, Takashi Kako¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

4:00 PM - 4:15 PM

▼ [19p-F6-8] Mechanism of Surface Roughness of ArF Photoresist During HBr Plasma Etching Processes (2)

^○（M1）Yan Zhang¹, Kenji Ishikawa¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

4:15 PM - 4:30 PM

[19p-F6-9] A Study on Annealing Mechanism of Plasma-induced Si Substrate Damage (1)

^○Koji Eriguchi¹, Masanaga Fukasawa², Yoshinori Takao¹, Tetsuya Tatsumi², Kouichi Ono¹ (Kyoto Univ.¹, Sony Corp.²)

4:30 PM - 4:45 PM

[19p-F6-10] Impacts of Plasma-Induced Charging Damage on Random Telegraph Noise (RTN) Characteristics of Advanced MOSFETs

Masayuki Kamei¹, ^○Koji Eriguchi¹, Yoshinori Takao¹, Kouichi Ono¹ (Kyoto Univ.¹)

4:45 PM - 5:00 PM

[19p-F6-11] Etching reactions for Si, SiO2 and SiN by SiBrx ions

^○kazuhiro karahashi¹, yu muraki¹, hu li¹, masaaki matsukuma², satoshi hamaguchi¹ (Osaka Univ.¹, Tokyo Electron Ltd.²)

5:00 PM - 5:15 PM

[19p-F6-12] Generation and evaluation of CO clusters for cluster beams

^○kazuhiro karahashi¹, toshio seki², jiro matsuo², satoshi hamaguchi¹ (Osaka Univ.¹, Kyoto Univ.²)

Break 17:15〜17:30 （5:15 PM - 5:30 PM）

5:30 PM - 5:45 PM

[19p-F6-13] Feature profile evolution for plasma etching using on-wafer monitoring

^○Tomohiro Kubota¹, Michio Sato², Takuya Iwasaki³, Kohei Ono³, Seiji Samukawa^1,4 (IFS, Tohoku Univ.¹, Harada Corp.², Mizuho I&R Inst.³, WPI-AIMR, Tohoku Univ.⁴)

5:45 PM - 6:00 PM

[19p-F6-14] Neutral Beam Etching Process Using Bio-template for Fabrication of Ge Nanodisk

^○Erman Mohd^1,5, Takeru Okada¹, Taiga Isoda^3,5, Kohei Ito^3,5, Ichiro Yamashita^4,5, Seiji Samukawa^1,2,5 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², Keio Univ.³, NAIST⁴, JST-CREST⁵)

6:00 PM - 6:15 PM

▲ [19p-F6-15] Damage-free AlGaN/GaN Recess-Gate Etching using Cl₂ Neutral Beam

^○Halubai Sekhar¹, Tomohiro Kubota¹, Takeru Okada^1,4, Jitsuo Ohta³, Hiroshi Fujioka^3,4, Seiji Samukawa^1,2,4 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², IIS, Univ. of Tokyo³, JST-CREST⁴)

6:15 PM - 6:30 PM

▲ [19p-F6-16] Activation energy measurement of chlorine neutral beam etching of GaAs

^○Thomas Cedric¹, Yosuke Tamura¹, Akio Higo², Takeru Okada¹, Seiji Samukawa^1,2 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.²)

6:30 PM - 6:45 PM

[19p-F6-17] Super excited states and ionization of CFx compounds

^○Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya University¹)

6:45 PM - 7:00 PM

[19p-F6-18] Study of residual moisture suppression in the compound semiconductor etching

^○Yukihiro Tsuji¹, Kenichi Machinaga¹, Hiroshi Inada¹, Tsukuru Katsuyama¹ (Sumitomo Electric Industries, Ltd.¹)

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[18p-PA7-1~2] 8.4 Plasma etching

[18p-PA7-1] Surface analysis of n-GaN crystal damaged by UV assisted He plasma-etching

[18p-PA7-2] Analysis on etching rate of silicon surface by hydrogen plasma based on first-principles calculations

[19a-F6-1~6] 8.4 Plasma etching

[19a-F6-1] Real-time / in-situ electron spin resonance analysis of surface reactions of poly(methyl-methacrylate) during plasma processes

[19a-F6-2] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Oblique Incidence of Etch Byproducts Ions

[19a-F6-3] Development of High Aspect Ratio TSV Etching Process for High-capacitor Fabrication

[19a-F6-4] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas

[19a-F6-5] Study on plasma emission lights-surface interactions

[19a-F6-6] CH₄/H₂ plasma etching on gallium nitride at high temperature

[19p-F6-1~18] 8.4 Plasma etching

[19p-F6-1] Interface trap generation at SiO2/Si structure by CHxFy plasma etching

△ [19p-F6-2] Dry Etching Properties of LaAlSiO_x

△ [19p-F6-3] Effects of metal carbonyls formation during ferromagnetic metal etching processes

△ [19p-F6-4] Etching reactions for transparent conducting films by CHx ions

△ [19p-F6-5] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (IV)

△ [19p-F6-6] Instantaneous generation of many flaked particles in mass-production plasma etching equipment

△ [19p-F6-7] Mechanism of plasma etching on gallium nitride at high temperature (4)

▼ [19p-F6-8] Mechanism of Surface Roughness of ArF Photoresist During HBr Plasma Etching Processes (2)

[19p-F6-9] A Study on Annealing Mechanism of Plasma-induced Si Substrate Damage (1)

[19p-F6-10] Impacts of Plasma-Induced Charging Damage on Random Telegraph Noise (RTN) Characteristics of Advanced MOSFETs

[19p-F6-11] Etching reactions for Si, SiO2 and SiN by SiBrx ions

[19p-F6-12] Generation and evaluation of CO clusters for cluster beams

[19p-F6-13] Feature profile evolution for plasma etching using on-wafer monitoring

[19p-F6-14] Neutral Beam Etching Process Using Bio-template for Fabrication of Ge Nanodisk

▲ [19p-F6-15] Damage-free AlGaN/GaN Recess-Gate Etching using Cl₂ Neutral Beam

▲ [19p-F6-16] Activation energy measurement of chlorine neutral beam etching of GaAs

[19p-F6-17] Super excited states and ionization of CFx compounds

[19p-F6-18] Study of residual moisture suppression in the compound semiconductor etching

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[18p-PA7-1~2] 8.4 Plasma etching

[19a-F6-1~6] 8.4 Plasma etching

[19p-F6-1~18] 8.4 Plasma etching

△ [19p-F6-2] Dry Etching Properties of LaAlSiOx

△ [19p-F6-3] Effects of metal carbonyls formation during ferromagnetic metal etching processes

△ [19p-F6-4] Etching reactions for transparent conducting films by CHx ions

△ [19p-F6-5] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (IV)

△ [19p-F6-6] Instantaneous generation of many flaked particles in mass-production plasma etching equipment

△ [19p-F6-7] Mechanism of plasma etching on gallium nitride at high temperature (4)

▼ [19p-F6-8] Mechanism of Surface Roughness of ArF Photoresist During HBr Plasma Etching Processes (2)

▲ [19p-F6-15] Damage-free AlGaN/GaN Recess-Gate Etching using Cl2 Neutral Beam

▲ [19p-F6-16] Activation energy measurement of chlorine neutral beam etching of GaAs

△ [19p-F6-2] Dry Etching Properties of LaAlSiO_x

▲ [19p-F6-15] Damage-free AlGaN/GaN Recess-Gate Etching using Cl₂ Neutral Beam