Oral presentation

[14a-F203-1~13] 15.1 Bulk crystal growth

Tue. Mar 14, 2017 9:00 AM - 12:30 PM F203 (F203)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[14a-F203-1] [JSAP Young Scientist Award Speech] Metastable crystal growth of pharmaceutical compound acetaminophen by using solution-mediated phase transformation (II)

〇Riki Fujimoto¹, Yoichiro Mori², Yoshinori Takahashi^2,3, Mihoko Maruyama², Hiroshi Yoshikawa^2,4, Shino Okada³, Hiroaki Adachi^2,3, Shigeru Sugiyama⁵, Kazufumi Takano^3,6, Satoshi Murakami^3,7, Hiroyoshi Matsumura^3,8, Tsuyoshi Inoue^2,3, Katsuo Tsukamoto^2,9, Masashi Yoshimura², Yusuke Mori^2,3 (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.SOSHO Inc., 4.Dept. of Chem., Saitama Univ., 5.Grad. Sch. of Sci., Osaka Univ., 6.Grad. Sch. of Life and Environ. Sci., Kyoto Pref. Univ., 7.Grad. Sch. of Biosci. And Biotech., Tokyo Inst. of Tech., 8.Sch. of Life Sci., Ritsumeikan Univ., 9.Grad. Sch. of Sci., Tohoku Univ.)

9:15 AM - 9:30 AM

[14a-F203-2] Control of the local strain in subgrains of protein crystals under application of an external electric field

〇Haruhiko Koizumi¹, Satoshi Uda¹, Masaru Tachibana², Kenichi Kojima³, Junpei Okada¹, Jun Nozawa¹ (1.IMR, Tohoku Univ., 2.Yokohama City Univ., 3.Yokohama Soei Univ.)

9:30 AM - 9:45 AM

[14a-F203-3] Investigation of self-flux solutions for crystal growth of high-quality CsLiB₆O₁₀

〇Taishi Fukuhara¹, Yoshinori Takahashi², Hiroaki Adachi^2,3, Yusuke Mori^2,3, Masashi Yoshimura^3,4 (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.SOSHO CHOKO Inc., 4.ILE, Osaka Univ.)

9:45 AM - 10:00 AM

[14a-F203-4] Large size growth of GdAlO₃/Al₂O₃ eutectic by micro-pulling down method

〇Kei Kamada¹, Hiroaki Yamaguchi², Nobuhiro Yasui³, Ryota Ohashi³, Toru Den³, akihiro yamaji², shunnsuke kurosawa¹, yasuhiro shoji², yuui yokota¹, ohashi yuji², akira yoshikawa^1,2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. IMR, 3.Canon)

10:00 AM - 10:15 AM

[14a-F203-5] Growth of Ir based alloy by Alloy-μ-PD Method

〇rikito murakami^1,2, Yuui Yokota³, Kei Kamada^1,3, Yasuhiro Shoji^1,2, Shunsuke Kurosawa^3,4, Yuji Ohashi², Akihiro Yamaji², Akira Yoshikawa^1,2,3 (1.C&A corp., 2.Tohoku Univ. IMR, 3.Tohoku Univ. NICHe, 4.Yamagata Univ.)

10:15 AM - 10:30 AM

[14a-F203-6] Phase formation and crystal growth of langasite-tyep Ca₃TaAl₃Si₂O₁₄

〇Yuui Yokota¹, Yuji Ohashi², Shunsuke Kurosawa^1,4, Kei Kamada^1,3,5, Akira Yoshikawa^1,2,3,5 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ., 3.Piezo Studio, 4.Yamagata Univ., 5.C&A)

10:45 AM - 11:00 AM

▼ [14a-F203-7] Effect of oxygen partial pressure and Al content on langasite Ca₃TaGa_3-xAl_xSi₂O₁₄ single crystals for high temperature piezoelectric sensors

〇(P)Xiuwei Fu¹, Encarnacion G. Villora¹, Yuuki Kitanaka², Yuji Noguchi², Masaru Miyayama², Kiyoshi Shimamura^1,3, Naoki Ohashi^1,4 (1.NIMS, 2.Uni. Tokyo, 3.Waseda Uni., 4.Tokyo Inst. Tech.)

11:00 AM - 11:15 AM

[14a-F203-8] Effect of molten-zone instability on the impurity partitioning during FZ growth

Yutaroh Takehara¹, Chihiro Koyama¹, 〇Satoshi Uda¹ (1.IMR Tohoku Univ.)

11:15 AM - 11:30 AM

[14a-F203-9] Partitioning of Al-Ga complex during melt growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄

Shuhei Sakano¹, Chihiro Koyama¹, Junpei Okada¹, 〇Satoshi Uda¹ (1.IMR Tohoku Univ.)

11:30 AM - 11:45 AM

[14a-F203-10] Effects of Mirror-lamp System Position on Rutile Crystal Growth by IR-FZ method

〇Satoshi Watauchi¹, Masato Suzuki¹, Masanori Nagao¹, Isao Tanaka¹ (1.Univ. of Yamanashi)

11:45 AM - 12:00 PM

[14a-F203-11] Effect of oxygen defect on melting point and Curie point of impurity-doped lithium niobate

〇Chihiro Koyama¹, Jun Nozawa¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

12:00 PM - 12:15 PM

[14a-F203-12] LiTaO₃ single crystal growth by Vertical Bridgeman Technique

〇Eiichiro Nishimura¹, Katsuhiko Okano¹, Junji Iida¹, Keigo Hoshikawa² (1.Sumitomo Metal Mining CO., LTD., 2.Shinshu University)

12:15 PM - 12:30 PM

[14a-F203-13] Three-dimensional analysis of crystal defects in LiTaO₃ using X-ray topography

〇Yuta Kubouchi¹, Tomio Kajigaya¹, Masashi Sugiyama¹, Shotaro Kawamura¹, Yutaka Ohno², Ichiro Yonenaga² (1.Sumitomo Metal Mining Co., Ltd., 2.Tohoku Univ.)

Oral presentation

[14p-B5-1~11] 15.1 Bulk crystal growth

Tue. Mar 14, 2017 1:45 PM - 5:45 PM B5 (B5)

Yuui Yokota(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:30 PM

[14p-B5-1] [INVITED] Growth of high quality Si ingots for solar cells
using the dendritic cast method and the noncontact crucible (NOC) method

〇Kazuo Nakajima^1,2, Satoshi Ono², Katsuhiko Shirasawa³, Tetsuo Fukuda³, Hidetaka Takato³ (1.Emeritus Prof. of Tohoku Univ., 2.Former JST, 3.FREA AIST)

2:30 PM - 3:15 PM

[14p-B5-2] [INVITED] The challenge for enlarging the application field of the micro-pulling down method

〇Akira Yoshikawa^1,2 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ.)

3:15 PM - 3:30 PM

△ [14p-B5-3] Growth of near infrared emission scintillator crystals and their luminescence properties

〇Akihiro Yamaji¹, Shunsuke Kurosawa², Ohashi Yuji¹, Akira Yoshikawa¹ (1.Tohoku Univ. IMR, 2.Yamagata Univ.)

3:30 PM - 3:45 PM

[14p-B5-4] Numerical analysis of growth rate and interface shape in CZ-Si crystal growth

〇Yuta Saibara¹, Nobumasa Kariya¹, Hodaka Kutsukage², Toshinori Taishi², Keigo Hoshikawa² (1.M.SETEK CO.,LTD., 2.Sinshu Univ.)

4:00 PM - 4:15 PM

[14p-B5-5] Numerical investigation for the melt flow during SiC growth by using an induction heating TSSG method

Takuya Yamamoto¹, 〇Yasunori Okano¹, Toru Ujihara² (1.Osaka Univ., 2.Nagoya Univ.)

4:15 PM - 4:30 PM

[14p-B5-6] Columnar-shaped β-Ga₂O₃ Crystal Growth by Edge-defined, Film-fed Growth Technique

〇Tendo Tanaka¹, Hoshikawa keigo² (1.Nissin Giken, 2.Shinshu University)

4:30 PM - 4:45 PM

[14p-B5-7] Novel Crystal Growth Technology for High Performance Functional Devices
and New Materials Development.

〇Shin Akutsu¹, Hirotoshi Maegawa^1,2 (1.AKT-lab, 2.Resonest)

4:45 PM - 5:00 PM

[14p-B5-8] High Purity SiGe Crystal Growth by the TLZ Method

〇Kyoichi Kinoshita^1,2, Yasutomo Arai³, Tatsuro Maeda⁴, Yasunori Sato⁵, Hidehiko Yoda⁶ (1.JSF, 2.Meiji Univ., 3.JAXA, 4.AIST], 5.TDY Co. Ltd., 6.Utsunomiya Univ.)

5:00 PM - 5:15 PM

[14p-B5-9] Two-dimensional nucleation in the colloidal crystal

〇Jun Nozawa¹, Suxia Guo¹, Haruhiko Koizumi¹, Junpei Okada¹, Satoshi Uda¹ (1.Tohoku Univ. IMR)

5:15 PM - 5:30 PM

▲ [14p-B5-10] In-situ observation of two dimensional nucleation in colloidal crystals with depletion attraction

〇(D)Suxia Guo¹, Jun Nozawa¹, Haruhiko Koizumi¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

5:30 PM - 5:45 PM

[14p-B5-11] Colloidal Crystal Growth and Stacking Faults

〇yoshimasa ohki¹, Yuji Nakano¹, Satoshi Kawanaka¹, hiroki Imai¹, Fumio Uchida¹ (1.Fuji Chemical Co., LTD.)

Poster presentation

[15p-P6-1~2] 15.1 Bulk crystal growth

Wed. Mar 15, 2017 1:30 PM - 3:30 PM P6 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[15p-P6-1] Knowledge Development of Material Production for Novel Crystal Growth Technique
"AP Method"

Hirotoshi Maegawa^1,2, 〇Shin Akutsu¹ (1.AKT-lab, 2.Resonest)

1:30 PM - 3:30 PM

[15p-P6-2] Growth of Mg-doped β-Ga₂O₃ single crystals by TSFZ method

〇(M1C)Daiki Fukudome¹, Nagao Masanori¹, Watauchi Satoshi¹, Tanaka Isao¹ (1.Yamanashi Univ.)

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[14a-F203-1~13] 15.1 Bulk crystal growth

[14a-F203-1] [JSAP Young Scientist Award Speech] Metastable crystal growth of pharmaceutical compound acetaminophen by using solution-mediated phase transformation (II)

[14a-F203-2] Control of the local strain in subgrains of protein crystals under application of an external electric field

[14a-F203-3] Investigation of self-flux solutions for crystal growth of high-quality CsLiB₆O₁₀

[14a-F203-4] Large size growth of GdAlO₃/Al₂O₃ eutectic by micro-pulling down method

[14a-F203-5] Growth of Ir based alloy by Alloy-μ-PD Method

[14a-F203-6] Phase formation and crystal growth of langasite-tyep Ca₃TaAl₃Si₂O₁₄

▼ [14a-F203-7] Effect of oxygen partial pressure and Al content on langasite Ca₃TaGa_3-xAl_xSi₂O₁₄ single crystals for high temperature piezoelectric sensors

[14a-F203-8] Effect of molten-zone instability on the impurity partitioning during FZ growth

[14a-F203-9] Partitioning of Al-Ga complex during melt growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄

[14a-F203-10] Effects of Mirror-lamp System Position on Rutile Crystal Growth by IR-FZ method

[14a-F203-11] Effect of oxygen defect on melting point and Curie point of impurity-doped lithium niobate

[14a-F203-12] LiTaO₃ single crystal growth by Vertical Bridgeman Technique

[14a-F203-13] Three-dimensional analysis of crystal defects in LiTaO₃ using X-ray topography

[14p-B5-1~11] 15.1 Bulk crystal growth

[14p-B5-1] [INVITED] Growth of high quality Si ingots for solar cells
using the dendritic cast method and the noncontact crucible (NOC) method

[14p-B5-2] [INVITED] The challenge for enlarging the application field of the micro-pulling down method

△ [14p-B5-3] Growth of near infrared emission scintillator crystals and their luminescence properties

[14p-B5-4] Numerical analysis of growth rate and interface shape in CZ-Si crystal growth

[14p-B5-5] Numerical investigation for the melt flow during SiC growth by using an induction heating TSSG method

[14p-B5-6] Columnar-shaped β-Ga₂O₃ Crystal Growth by Edge-defined, Film-fed Growth Technique

[14p-B5-7] Novel Crystal Growth Technology for High Performance Functional Devices
and New Materials Development.

[14p-B5-8] High Purity SiGe Crystal Growth by the TLZ Method

[14p-B5-9] Two-dimensional nucleation in the colloidal crystal

▲ [14p-B5-10] In-situ observation of two dimensional nucleation in colloidal crystals with depletion attraction

[14p-B5-11] Colloidal Crystal Growth and Stacking Faults

[15p-P6-1~2] 15.1 Bulk crystal growth

[15p-P6-1] Knowledge Development of Material Production for Novel Crystal Growth Technique
"AP Method"

[15p-P6-2] Growth of Mg-doped β-Ga₂O₃ single crystals by TSFZ method

Authentication

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[14a-F203-1~13] 15.1 Bulk crystal growth

▼ [14a-F203-7] Effect of oxygen partial pressure and Al content on langasite Ca3TaGa3-xAlxSi2O14 single crystals for high temperature piezoelectric sensors

[14p-B5-1~11] 15.1 Bulk crystal growth

△ [14p-B5-3] Growth of near infrared emission scintillator crystals and their luminescence properties

▲ [14p-B5-10] In-situ observation of two dimensional nucleation in colloidal crystals with depletion attraction

[15p-P6-1~2] 15.1 Bulk crystal growth

Authentication

▼ [14a-F203-7] Effect of oxygen partial pressure and Al content on langasite Ca₃TaGa_3-xAl_xSi₂O₁₄ single crystals for high temperature piezoelectric sensors