Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Sep 23, 2022 9:00 AM - 11:45 AM B101 (B101)

Kosuke Takenaka(Osaka Univ.), Giichiro Uchida(Meijo Univ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-B101-1] Relation between flip-flop characteristics of PTFE sputtered film and OH group

〇Kohshi Taguchi¹, Mina Tomikawa¹, Ko Minoura¹, Motohiro Yamahara¹, Kazuyuki Noborio¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

9:15 AM - 9:30 AM

[23a-B101-2] Plasma polymers are affected by chemical structure of monohydric alcohols.

〇Kohshi Taguchi¹, Kashiwagi Daiki¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

9:30 AM - 9:45 AM

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

〇Hiroki Kondo¹, Jumpei Kurokawa², Takayoshi Tsutsumi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ. Low-temp. Plasma, 2.Nagoya Univ. Eng.)

9:45 AM - 10:00 AM

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

〇Yuya Asamoto^1,5, Takashi Hamano^1,5, Takayuki Matsuda¹, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.Shinko Seiki Co., Ltd., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)

10:00 AM - 10:15 AM

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

〇jumpei kito¹, yuki hashimoto¹, yoshinori saiki¹, takahiro bando¹, toru harigai¹, hirohumi takikawa¹, hiroki gima² (1.Toyohashi Univ. Technol., 2.OSG Coating Service)

10:30 AM - 10:45 AM

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

〇ZHIZHI LIU¹, Motoaki Yamauchi¹, Mao Xu¹, Taiki Osawa¹, Akitoshi Okino¹ (1.FIRST, Tokyo Tech.)

10:45 AM - 11:00 AM

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles

〇(M1)Yuta Makino¹, Retsuo Kawakami¹, Shin-ichiro Yanagiya^1,2, Masahito Niibe³, Yoshitaka Nakano⁴, Takashi Mukai⁵ (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Hyogo Univ., 4.Chubu Univ., 5.Nichia Corp.)

11:00 AM - 11:15 AM

[23a-B101-8] Effect of post-treatment with atmospheric pressure plasma on metal oxide thin films deposited by mist CVD

〇(M2)Hiroya Kobayashi¹, Takeda Keigo¹, Hiramatsu Mineo¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM

[23a-B101-9] AlN and Al₂O₃ multiple gas barrier films fabricated by low-temperature atomic layer deposition

〇(D)Kentaro Saito¹, Kazuki Yoshida¹, Masanori Miura², Kensaku Kanomata², Bashir Ahmmad¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

11:30 AM - 11:45 AM

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

〇Svrcek Vladimir¹, Calum McDonald¹, Takuya Matsui¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

Session information

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[23a-B101-1] Relation between flip-flop characteristics of PTFE sputtered film and OH group

[23a-B101-2] Plasma polymers are affected by chemical structure of monohydric alcohols.

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles

[23a-B101-8] Effect of post-treatment with atmospheric pressure plasma on metal oxide thin films deposited by mist CVD

[23a-B101-9] AlN and Al₂O₃ multiple gas barrier films fabricated by low-temperature atomic layer deposition

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

Authenticate

Session information

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[23a-B101-1] Relation between flip-flop characteristics of PTFE sputtered film and OH group

[23a-B101-2] Plasma polymers are affected by chemical structure of monohydric alcohols.

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O2 Plasma-Assisted Annealingon Pt-Doped Rutile Phase TiO2 Nanoparticles

[23a-B101-8] Effect of post-treatment with atmospheric pressure plasma on metal oxide thin films deposited by mist CVD

[23a-B101-9] AlN and Al2O3 multiple gas barrier films fabricated by low-temperature atomic layer deposition

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

Authenticate

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles

[23a-B101-9] AlN and Al₂O₃ multiple gas barrier films fabricated by low-temperature atomic layer deposition