Oral presentation

[15p-A404-1~19] 6.1 Ferroelectric thin films

Wed. Mar 15, 2023 1:00 PM - 6:30 PM A404 (Building No. 6)

Tomoaki Yamada(Nagoya Univ.), Takao Shimizu(NIMS), Hiroshi Uchida(Sophia Univ.), Minoru Noda(Kyoto Institute of Technology)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

〇(M1)Yoshiki Maekawa¹, Koji Hirai¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

1:15 PM - 1:30 PM

△ [15p-A404-2] No heating deposition of HfO₂-CeO₂ ferroelectric thick films by sputtering method

〇(M1)Nachi Chaya¹, Koji Hirai¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Wakiko Yamaoka², Yukari Inoue², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.TDK Corp.)

1:30 PM - 1:45 PM

[15p-A404-3] Spatial resolution of polarization domain observation under electrode by direct piezoelectric response microscopy

〇Takuto Hagiwara¹, Kasidit Toprasertpong², Shinichi Takagi², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metropolitan Univ., 2.The Univ. of Tokyo)

1:45 PM - 2:00 PM

[15p-A404-4] Investigation of the threshold voltage control of MFSFET with ferroelectric nondoped HfO₂

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

2:00 PM - 2:15 PM

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

〇(D)JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

2:15 PM - 2:30 PM

[15p-A404-6] 【Highlighted Presentation】Development of an operando laser-based photoemission electron microscope capable of characterizing ferroelectric properties

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi³, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

2:30 PM - 2:45 PM

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

〇Yuki Itoya¹, Hirokazu Fujiwara², Cedric Bareille^3,4, Shik Shin^4,5, Toshiyuki Taniuchi^3,4, Masaharu Kobayashi^1,6 (1.IIS, 2.ISSP, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.d. lab)

2:45 PM - 3:00 PM

[15p-A404-8] Improvement in ferroelectricity of Hf_0.5Zr_0.5O₂ thin film followed by nitrogen plasma treatment on bottom electrode

〇Hiromi Hayakawa¹, Sho Tanaka¹, Minoru Noda¹ (1.Kyoto Inst. Tech Univ.)

3:00 PM - 3:15 PM

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

〇(M2)Sho Tanaka¹, Takumi Hayakawa¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

3:30 PM - 4:00 PM

▲ [15p-A404-10] [The 44th Best Review Paper Award Speech] Two-dimensional polar metal by charge transfer to a ferroelectric insulator

〇Ariando Ariando¹ (1.Nat'l Univ. of Singapore)

4:00 PM - 4:15 PM

[15p-A404-11] Estimation of Residual Hydrogen Contents by PBW of Ferroelectric Materials

Jun Hirade¹, 〇Masaki Yamaguchi^1,2, Hideo Kimura³ (1.Fac. of Eng., Shibaura Inst. of Tech., 2.IRCGE, Shibaura Inst. of Tech., 3.Yantai Univ.)

4:15 PM - 4:30 PM

[15p-A404-12] Local Structure Analysis of V-doped BiFeO₃ Thin Film by X-ray Fluorescence Holography

〇Kazuki Arima¹, Seiji Nakashima¹, Koji Kimura², Koichi Hayashi², Naohisa Happo³, Hironori Fujisawa¹ (1.Univ. of Hyogo, 2.Nagoya Inst. of Technology, 3.Hiroshima City Univ.)

4:30 PM - 4:45 PM

[15p-A404-13] The growth of (100) BiFeO₃ epitaxial thin films on Si substrates by combinatorial sputtering method

〇Kohei Takaki¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

4:45 PM - 5:00 PM

[15p-A404-14] Enhaced Electro-optic Property in Mg-doped ZnO Thin Films

Xueyou Yuan¹, 〇Tomoaki Yamada¹, Lei Meng² (1.Nagoya Univ., 2.Inst. Semiconductors, Chinese Academy of Sciences)

5:15 PM - 5:30 PM

[15p-A404-15] Proposal of Ultra-Fast Reading Method for SNDM Ferroelectric Probe Memory

〇Yasuo Cho¹, Yoshiomi Hiranaga² (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)

5:30 PM - 5:45 PM

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory

〇(P)Nana Sun¹, Kanamori Hiroaki², Iizuka Takeshi², Konishi Akio², Yasuo Cho¹ (1.Tohoku Univ. NICHe, 2.I-PEX Piezo Sol.)

5:45 PM - 6:00 PM

[15p-A404-17] Evaluation of electrical properties for epitaxial (Al,Sc)N film deposited on NbN electrode

〇(D)Shinnosuke Yasuoka¹, Reika Ota¹, Kazuki Okamoto¹, Takao Shimizu^2,3, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST)

6:00 PM - 6:15 PM

[15p-A404-18] Evaluation of the effect of prior plasma nitriding on plasma-oxidized AlScN by AR-HAXPES

〇Tomoya Tsutsumi¹, Kazuki Goshima¹, Yoshiharu Kirihara¹, Tatsuki Okazaki², Akira Yasui³, Kuniyuki Kakushima⁴, Yuichiro Mitani^1,2, Hiroshi Nohira¹ (1.Tokyo City Univ, 2.Adv. Res. Lab., Tokyo City Univ., 3.JASRI, 4.Tokyo Institute of Technology)

6:15 PM - 6:30 PM

[15p-A404-19] Ferroelectric properties in AlN thin films fabricated by sputtering method

〇Kota Hasegawa^1,2, Takao Shimizu², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

Oral presentation

[16p-A409-1~17] 6.1 Ferroelectric thin films

Thu. Mar 16, 2023 2:00 PM - 6:30 PM A409 (Building No. 6)

Isaku Kanno(Kobe Univ.), Takeshi Yoshimura(Osaka Metro. Univ.), Shintaro Yasui(Tokyo Tech), Shinya Yoshida(Shibaura Institute of Technology)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:00 PM - 2:15 PM

[16p-A409-1] RTA Effects of Epitaxial (K,Na)NbO₃ Thin Films on Si Substrates

〇Rei Ogawa¹, Kiyotaka Tanaka¹, Sang Hyo Kweon¹, Goon Tan², Isaku Kanno¹ (1.Kobe Univ., 2.Osaka Metropolitan Univ.)

2:15 PM - 2:30 PM

[16p-A409-2] Transfer of barium titanate film on Si using µ-transfer printing

〇Toshiya Murai¹, Rai Kou¹, Guangwei Cong¹, Nobuaki Mitamura², Ken Morito², Koji Yamada¹ (1.AIST, 2.Fujitsu Optical Components Ltd.)

2:30 PM - 2:45 PM

△ [16p-A409-3] Ferroelectric properties of (Bi,K)TiO₃-CaTiO₃ solid solution thin films prepared by a hydrothermal method

〇(M1)Taichi Murashita¹, Yuxian Hu¹, Yuma Takahashi¹, Reika Ota¹, Kazuki Okamoto¹, Hiroshi Funakubo¹ (1.Tokyo Tech.)

2:45 PM - 3:00 PM

▼ [16p-A409-4] Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity

〇Lizhikun Gong¹, Binjie Chen¹, Rui Yu¹, Hiromichi Ohta², Katayama Tsukasa^2,3 (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ., 3.JST-PRESTO)

3:00 PM - 3:15 PM

[16p-A409-5] Improvement of polarization and piezoelectric properties of one-axis-oriented PZT thin films fabricated on glass substrates

Yusuke Yamasaki¹, Yukie Yokota¹, Hiromi Shima², Yoshiko Nakamura³, Hiroshi Funakubo³, 〇Hiroshi Uchida¹ (1.Sophia Univ., 2.Nat. Def. Acad., 3.Tokyo Tech.)

3:15 PM - 3:30 PM

△ [16p-A409-6] Evaluation of film thickness dependence of piezoelectric response in tetragonal Pb(Zr,Ti)O₃ films by x-ray diffraction with application of an electric field

〇(M1)MIKI NAKAHATA¹, KAZUKI OKAMOTO¹, KEISUKE ISHIHAMA¹, TOMOAKI YAMADA², HIROSHI FUNAKUBO¹ (1.Tokyo Tech., 2.Nagoya Univ.)

3:30 PM - 3:45 PM

[16p-A409-7] Formation of piezoelectric single-crystal PbTiO₃ films on Si substrates utilizing buffer layer

〇KYOSUKE IYAMA¹, Takeshi Kijima^1,2, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.The Univ. of Tokyo, 2.Gaianixx)

3:45 PM - 4:00 PM

▲ [16p-A409-8] Compositional modification of epitaxial Pb(Zr,Ti)O₃ thin films for high-performance piezoelectric energy harvesters

〇SangHyo Kweon¹, Eun Ji Kim², Goon Tan³, Isaku Kanno¹ (1.Kobe Univ., 2.Korea Univ., 3.Osaka Metropolitan Univ.)

4:15 PM - 4:30 PM

[16p-A409-9] Study of pattern of PZT Actuator for actuating the spiral structure

〇Yasuyuki Yamamoto¹, Sohei Matsumoto¹, Tomoko Yamamoto¹, Yuki Okamoto¹, Masaaki Ichiki¹, Takeshi Kobayashi¹ (1.AIST)

4:30 PM - 4:45 PM

[16p-A409-10] Influence of Carbon Contamination in Potassium Ion Electret

〇(B)Taiki Kirikoshi¹, Yoshiki Ohata², Masaaki Araidai^2,3, Takuma Ishiguro⁴, Hiroyuki Mitsuya⁴, Hiroshi Toshiyoshi⁵, Yasushi Shibata⁶, Gen Hashiguchi⁶, Kenji Shiraishi^2,3 (1.School of Engineering, Nagoya Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.Saginomiya Seisakusho INC., 5.IIS, University of Tokyo, 6.Graduate School of Engineering, Shizuoka Univ.)

4:45 PM - 5:00 PM

△ [16p-A409-11] High quasi-shear mode excitation of c-axis tilted PbTiO₃ epitaxial thin film grown on off-angle-cut single crystal substrate

〇Sota Kuninobu^1,2, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

5:00 PM - 5:15 PM

△ [16p-A409-12] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of
(10-12) LiNbO₃ epitaxial thin film

〇Hiroki Uchida^1,2, Shinya Kudo^1,2, Yanagitani Takahiko^1,2,3,5,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

5:15 PM - 5:30 PM

[16p-A409-13] Ultrasonic resonance characteristics in the giga-hertz range of Ta doped LiNbO₃ epitaxial thin film

〇(B)Kae Nakamura^1,2, Shinya Kudo^1,2, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

5:30 PM - 5:45 PM

△ [16p-A409-14] Quasi-shear mode excitation of c-axis tilted MgZnO and ScAlN epitaxial thin films on off-angle sapphire single crystal substrates

〇Shiori Kobayashi^1,2, Hiroki Kishi^1,2, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

5:45 PM - 6:00 PM

△ [16p-A409-15] SMR based on epitaxial acoustic Bragg reflector and epitaxial piezoelectric thin films

〇Satoshi Tokai^1,2, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

6:00 PM - 6:15 PM

[16p-A409-16] Characteristics of BAW resonators with YbGaN and YbAlN epitaxial thin films

〇Zitai Feng^1,2, Song Li^1,2, Junjun Jia¹, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

6:15 PM - 6:30 PM

△ [16p-A409-17] Acoustic separation of piezoelectric layer and substrate by using 30-layer polarization inversion resonator

〇Kazutaka Shiraiwa^1,2, Takahiko Yanagitani^1,2,3,4,5 (1.Waseda Univ., 2.Zaiken, 3.JST-CREST, 4.JST-FOREST, 5.JST-START)

Poster presentation

[17p-PA06-1~14] 6.1 Ferroelectric thin films

Fri. Mar 17, 2023 1:30 PM - 3:30 PM PA06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[17p-PA06-1] Preparation of LaTaO₄ Epitaxial Films by PLD Technique

〇Sohta Morii¹, Yosuke Hamasaki¹, Yoshitaka Ehara¹, Shintaro Yasui², Shinya Sawai¹ (1.National Defense Academy, 2.Tokyo Institute of Technology)

1:30 PM - 3:30 PM

[17p-PA06-2] Effect of Nb substitution on properties of LaTaO₄ thin films fabricated by chemical solution deposition method

〇Hiromi Shima¹, Yosuke Hamasaki¹, Shinya Sawai¹, Hiroshi Uchida² (1.Nat. Def. Acad., 2.Sophia Univ.)

1:30 PM - 3:30 PM

[17p-PA06-3] Ga and Al doping effect on ferroelectric properties of BaTiO₃ epitaxial films

〇Ko Marunouchi¹, Lizhikun Gong², Hiromichi Ohta³, Tsukasa Katayama^3,4 (1.Hokkaido Univ., 2.IST-Hokkaido Univ., 3.RIES-Hokkaido Univ., 4.JST-PRESTO)

1:30 PM - 3:30 PM

[17p-PA06-4] Monitoring of PLD Growth Process of Strongly Correlated Ferroelectric YMnO₃ Thin Films by Optical Emission Spectra of Plasma Plume II

〇Yuki Igarashi¹, Kento Shimamoto¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ.)

1:30 PM - 3:30 PM

[17p-PA06-5] Electric Transport in Multiferroic YbFe₂O₄ Thin Films during Magnetic Ordering

〇(D)Kento Shimamoto¹, Yuki Igarashi¹, Takumi Hayama¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ.)

1:30 PM - 3:30 PM

[17p-PA06-6] Composition control of YbFe₂O₄ epitaxial thin films fabricated by PLD method

〇Takumi Hayama¹, Kento Shimamoto¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ.)

1:30 PM - 3:30 PM

[17p-PA06-7] Influences of growth mechanism and chemical composition of correlated ferroelectric YbMnO₃ thin films

〇Sodai Ichikawa¹, Keisuke Fukae², Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ., 2.Osaka Pref.Univ.)

1:30 PM - 3:30 PM

[17p-PA06-8] Improvement of Epitaxial (K,Na)NbO₃ Thin Films Grown on Si Substrates using Buffer Layers

〇Kiyotaka Tanaka¹, Rei Ogawa¹, Sang Hyo Kweon¹, Goon Tan², Isaku Kanno¹ (1.Kobe Univ., 2.Osaka Metro. Univ.)

1:30 PM - 3:30 PM

[17p-PA06-9] Crystallization process of ALD deposited Hf_xZr_1-xO₂ thin films on Ga₂O₃ substrate Ⅱ

〇Keigo Naito¹, Koichi Yamaguchi², Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ., 2.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

▲ [17p-PA06-10] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy II

〇(PC)Siddhant Anandrao Dhongade¹, Hiroyuki Matsuzaki¹, Hiroyuki Yamada¹, Akihito Sawa¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

1:30 PM - 3:30 PM

[17p-PA06-11] Growth mechanism of ALD-HfO₂ thin films
deposited by restricting the growth space near the substrate

〇Ryuto Ichikawa¹, Shuya Takarae², Keigo Naito¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ., 2.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[17p-PA06-12] Mechanomyography Using Organic Piezoelectric Sheets

〇Soma Sakoda¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

1:30 PM - 3:30 PM

[17p-PA06-13] Reservoir computing with multiple piezoelectric oscillators

〇Takehiro Shono¹, Taiki Haga¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

1:30 PM - 3:30 PM

[17p-PA06-14] Synthesis of c-axis oriented AlN thin film on titanium cantilever for high output of piezoelectric vibratory energy harvesters

〇(B)Tomoya Nagao¹, H. H. Nguyen², Hiroki Kuwano², Hiroyuki Oguchi¹ (1.Shibaura Tech, 2.Tohoku Univ. NICHe)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-1] Growth and characterization of Y-doped HfO2 epitaxial films on various substrates

△ [15p-A404-2] No heating deposition of HfO2-CeO2 ferroelectric thick films by sputtering method

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO2

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO2 capacitors using laser-photoelectron emission microscopy

△ [15p-A404-9] Effects on Electrical Characteristics of Hf0.5Zr0.5O2 Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

▲ [15p-A404-10] [The 44th Best Review Paper Award Speech] Two-dimensional polar metal by charge transfer to a ferroelectric insulator

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO3 recording media for SNDM probe memory

[16p-A409-1~17] 6.1 Ferroelectric thin films

△ [16p-A409-3] Ferroelectric properties of (Bi,K)TiO3-CaTiO3 solid solution thin films prepared by a hydrothermal method

▼ [16p-A409-4] Flexible BaTiO3 Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity

△ [16p-A409-6] Evaluation of film thickness dependence of piezoelectric response in tetragonal Pb(Zr,Ti)O3 films by x-ray diffraction with application of an electric field

▲ [16p-A409-8] Compositional modification of epitaxial Pb(Zr,Ti)O3 thin films for high-performance piezoelectric energy harvesters

△ [16p-A409-11] High quasi-shear mode excitation of c-axis tilted PbTiO3 epitaxial thin film grown on off-angle-cut single crystal substrate

△ [16p-A409-12] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of(10-12) LiNbO3 epitaxial thin film

△ [16p-A409-14] Quasi-shear mode excitation of c-axis tilted MgZnO and ScAlN epitaxial thin films on off-angle sapphire single crystal substrates

△ [16p-A409-15] SMR based on epitaxial acoustic Bragg reflector and epitaxial piezoelectric thin films

△ [16p-A409-17] Acoustic separation of piezoelectric layer and substrate by using 30-layer polarization inversion resonator

[17p-PA06-1~14] 6.1 Ferroelectric thin films

▲ [17p-PA06-10] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy II

Authenticate

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

△ [15p-A404-2] No heating deposition of HfO₂-CeO₂ ferroelectric thick films by sputtering method

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory

△ [16p-A409-3] Ferroelectric properties of (Bi,K)TiO₃-CaTiO₃ solid solution thin films prepared by a hydrothermal method

▼ [16p-A409-4] Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity

△ [16p-A409-6] Evaluation of film thickness dependence of piezoelectric response in tetragonal Pb(Zr,Ti)O₃ films by x-ray diffraction with application of an electric field

▲ [16p-A409-8] Compositional modification of epitaxial Pb(Zr,Ti)O₃ thin films for high-performance piezoelectric energy harvesters

△ [16p-A409-11] High quasi-shear mode excitation of c-axis tilted PbTiO₃ epitaxial thin film grown on off-angle-cut single crystal substrate

△ [16p-A409-12] Ultrasonic resonance characteristics of quasi shear mode in the giga-hertz range of
(10-12) LiNbO₃ epitaxial thin film