[D-2-8] Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers

David M. Pooley, Haroon Ahmed, Hiroshi Mizuta, Kazuo Nakazato (1.Microelectronics Research Centre, Cavendish Laboratory, Cambridge University, 2.Hitachi Cambridge Laboratory, Cavendish Laboratory)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-1] Can ZnO Eat Market in Optoelectronic Applications?

M. Kawasaki, K. Tamura, K. Saikusa, T. Aita, A. Tsukazaki, A. Ohtomo, Z. G. Jin, Y. Matsumoto, T. Fukumura, H. Koinuma, Y. Ohmaki, S. Kishimoto, Y. Ohno, F. Matsukura, H. Ohno, T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, Z. K. Tang, G. K. L. Wang (1.Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 2.Research Institute of Electronic Communication, Tohoku University, 3.Photodynamics Research Center, RIKEN, 4.Department of Physics, The Hong Kong University of Science and Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-2] Electrical and Structural Properties of Ti/Au Ohmic Contacts on N-ZnO:Al

Han-Ki Kim, Sang-Heon Han, Kyung-Kook Kim, Won-Kook Choi, Tae-Yeon Seong (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (KJIST), 2.Thin Film Technology Research Center, Korea Institute of Science and Technology (KIST))

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-3] C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates

Y. Ohmaki, S. Kishimoto, Y. Ohno, F. Matsukura, H. Ohno, K. Saikusa, T. Aita, A. Ohtomo, M. Kawasaki (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University, 2.Department of Innovative and Engineered Materials, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami (1.Department of Electronic Science & Engineering, Kyoto University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-5] Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment

Masashi Kato, Fumitaka Sobue, Masaya Ichimura, Eisuke Arai, Noboru Yamada, Yutaka Tokuda, Tsugunori Okumura (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 2.Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laboratories Inc., 3.Department of Electronics, Aichi Institute of Technology, 4.Department of Electrical Engineering, Tokyo Metropolitan University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-1-6] Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors

Elder A. de Vasconcelos, Eronides F. da Silva Jr., Teruaki Katsube, Sadafumi Yoshida, Yasushiro Nishioka (1.Departamento de Fisica, Universidade Federal de Pernambuco, 2.Graduate School of Science and Engineering, Saitama University, 3.Texas Instruments Tsukuba Research & Development Center Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Physics of GaN Based Electronic Devices

M. S. Shur, R. Gaska, Asif Khan (1.CIEEM and Department of ECSE, Rensselaer Polytechnic Institute, 2.Sensor Electronic Technology, Inc., 3.Department of ECE, University of South Carolina)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] Computational Chemistry Study on Crystal Growth Process of InGaN/GaN

Yusaku Inaba, Takayuki Onozu, Seiichi Takami, Momoji Kubo Akira Miyamoto, Akira Imamura (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Depertment of Mathematics, Faculty of Engineering, Hiroshima Kokusai Gakuin University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations

Toshio Saito, Yasuhiko Arakawa (1.Center for Collaborative Research, University of Tokyo, 2.Research Center for Advanced Science and Technology, University of Tokyo)

2000 International Conference on Solid State Devices and Materials |PDF Download