[B-8-4] Simple Process for Buried Nanopyramid Array (BNPA) Fabrication by Means of Dopant Ion Implantation and Dual Wet Etching

M. Koh, T. Goto, T. Iida, A. Sugita, T. Tanii, T. Shinada, T. Matsukawa, I. Ohdomari (1.Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2.School of Science and Engineering, Waseda University, 3.Electrotechnical Laboratory)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LB-2-1] Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki (1.Electron Devices Division, Electrotechnical Laboratory)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides

Akiko Nara, Naoki Yasuda, Hideki Satake, Akira Toriumi (1.Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics

Yoshinao Miura, Shinji Fujieda (1.Silicon Systems Research Laboratories System Devices and Fundamental Research, NEC Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance

Masayuki Sougawa, Takeshi Kanashima, Masashi Agata, Kaoru Yamashita, Masanori Okuyama, Akira Fujimoto, Koji Eriguchi (1.Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, 2.Dept. Electrical Engineering, Wakayama National College of Technology, 3.ULSI Process Tech. Dev. Ctr., Matsushita Electronics)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy

W. S. Kim, S. Song, Y. Khang, T. H. Choe, J. Y. Yoo, N. I. Lee, K. Fujihara, H. K. Kang, J. T. Moon (1.Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer

Hiroyuki Shimada, Ichiro Ohshima, Takeo Ushiki, Shigetoshi Sugawa, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Device Development Group, SEIKO EPSON Corporation, 3.New Industry Creation Hatchery Center, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-9-6] Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe3 Precursor in an Oxidizing Atmosphere

Yuichi Matsui, Masahiko Hiratani, Toshihide Nabatame, Yasuhiro Shimamoto, Kazushige Imagawa, Shinichiro Kimura (1.Central Research Laboratory, Hitachi, Ltd, 2.Hitachi Research Laboratory, Hitachi, Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Partially-Depleted SOI CMOS for Low-Power-Consumption LSIs

Hiroaki Mikoshiba, Michiru Hogyoku (1.IC R&D Department, Seiko Epson Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] Low-Power RF Circuits in SOI

Mitsuru Harada (1.NTT Telecommunications Energy Laboratories)

2000 International Conference on Solid State Devices and Materials |PDF Download