[A-5-6] Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs

Taro Sugizaki, Atsushi Murakoshi, Yoshio Ozawa, Toshiro Nakanishi, Kyoichi Suguro (1.Fujitsu Laboratories Ltd., 2.Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-7] Impacts of Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology

Masaru Moriwaki, Takayuki Yamada (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-8] Boron Diffusion in SiO2 Involving High-Concentration Effects

Takayuki Aoyama, Hiroshi Arimoto, Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Precise CD-Controlled Gate Etching Using UHF-ECR Plasma

Masahito Mori, Naoshi Itabashi, Hiroaki Ishimura, Hiroshi Akiyama, Takashi Fujii, Go Saito, Motohiko Yoshigai, Masayuki Kojima, Keiji Okamoto, Kazunori Tsujimoto, Shin'ichi Tachi (1.Central Research Laboratory, Hitachi, Ltd., 2.Kasado Semiconductor Equipment Product Division, Hitachi, Ltd., 3.Hitachi Techno Eng. Co., Ltd., 4.Semiconductor & Integrated Circuit Division, Hitachi, Ltd., 5.Hitachi ULSI Systems Co. Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Etch Damage of n+Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current

H. MURAKAMI, T. MIHARA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas

Hiroshi Arakawa, Yasuyuki Shirai, Tadahiro Ohmi (1.New Industry Creation Hatchery Center (NICHe), Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Theoretical Study on the Formation Process of Empty Space in Silicon (ESS)

Kunihiro Mitsutake, Yukihiro Ushiku (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source

Masafumi Kitano, Yasuyuki Shirai, Atsushi Ohki, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, University of Tohoku, 2.Osaka Sanso Kogyo Limited)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-6] Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires

Shin Yokoyama, Kenji Ohba, Kensaku Kawamura, Toshiro Kidera, Anri Nakajima (1.Research Center for Nanodevices and Systems, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-6-7] Channel Width Dependence of Mobility in Ge Channel Modulation Doped Structures

T. Irisawa, H. Miura, T. Ueno, Y. Shiraki (1.Research Center for Advanced Science and Technology, The University of Tokyo)

2000 International Conference on Solid State Devices and Materials |PDF Download