[E-6-1] Self-Aligned SiGe HBT Technology for Optical-Fiber-Links and Millimeter-Wave Applications

Katsuyoshi Washio (1.ULSI Research Department, Central Research Laboratory, Hitachi Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] Effect of Ti Silicidation on fmax and Base Resistance of SiGe Hetero-Junction Bipolar Transistors

Seung-Yun Lee, Hong-Seung Kim, Kyu-Hwan Shim, Jin-Yeong Kang (1.SiGe Devices Team, Micro-Electronics Technology Laboratory, Electronics and Telecommunications Research Institute)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] A New High Speed Switching Bipolar Power Transistor with Corrugated Base Junctions

Chanho Park, Youngsik Yoon, Deok J. Kim, Kwyro Lee (1.Korea Advanced Institute of Science and Technology, 2.Fairchild Korea Semiconductor Inc. Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation

Dooyoung Hah, Euisik Yoon, Songcheol Hong (1.Department of Electrical Engineering and Computer Science, KAIST)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-5] Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization

Toshihiko Kosugi, Yohtaro Umeda, Tetsuya Suemitsu, Takatomo Enoki, Yasuro Yamane (1.NTT Photonics Laboratories)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-6] Accurate Small-Signal Modeling and Parameter Extraction for RF MOSFETs

Seonghearn Lee, Cheon Soo Kim, Hyun Kyu Yu (1.Department of Electronic Engineering, Hankuk University of Foreign Studies, 2.Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute)

2000 International Conference on Solid State Devices and Materials |PDF Download

[E-6-7] A Silicon RF-CMOS Class-B Push-Pull Power Amplifier for IMT-2000

M. Yokoyama, R. Tachibana, T. Saito, K. Masu, K. Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-7-1] Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate

Kiyotaka MIYANO, Ichiro MIZUSHIMA, Yoshitaka TSUNASHIMA (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

K. Ohuchi, K. Adachi, A. Murakoshi, A. Hokazono, T. Kanemura, N. Aoki, M. Nishigohri, K. Suguro, Y. Toyoshima (1.System LSI Research & Development Center, Toshiba Corporation Semiconductor Company, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.Advanced Logic Technology Department, Toshiba Corporation Semiconductor Company)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation

C. M. Park, K. Min, S. D. Kim, S. A. Prussin, M. K. Han, J. C. S. Woo (1.Department of Electrical Engineering, University of California, 2.School of Electrical Engineering, Seoul National University)

2000 International Conference on Solid State Devices and Materials |PDF Download