[D-3-2] A Multi-Quantum-Dot Associative Circuit Using Thermal-Noise Assisted Tunneling

Tomohiro Matsuura, Takashi Morie, Makoto Nagata, Atsushi Iwata (1.Faculty of Engineering, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] Single Far-Infrared Photon Detection Using an SET

Oleg Astafiev, Vladimir Antonov, Takeshi Kutsuwa, Susumu Komiyama (1.Department of Basic Science, University of Tokyo, 2.CREST, Japan Science and Technology Corporation (JST))

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Single FIR-Photon Detection Using an RF-SET

T. Kutsuwa, V Antonov, O. Astafiev, S. Komiyama (1.Department of Basic Science, University of Tokyo, 2.Japan Science and Technology Corporation (JST))

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-3-5] Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors

Hiroshi Okada, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Superlattice- and Ultrashort-Channel Field Effect Transistors Fabricated by Cleaved Edge Overgrowth

R. A. Deutschmann, W. Wegscheider, F. Ertl, T. Asperger, M. Rother, M. Bichler, G. Abstreiter (1.Walter Schottky Institut, Technische Universitat Munchen, 2.Institut fur Angewandte und Experimentelle Physik Universitat Regensburg)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers

Yuji Nakagawa, Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata, Hiroshi Ishikawa (1.Tokyo Institute of Technology, 2.Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well

Masaomi Yamaguchi, Yoshihiro Sugiyama, Yoshiaki Nakata, Toshio Ohshima, Hirotaka Sasakura, Shunichi Muto, Yuji Awano, Naoki Yokoyama (1.Fujitsu Limited, 2.Fujitsu Laboratories Ltd., 3.Department of Applied Physics, Faculty of Engineering Hokkaido University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] A Model of Carrier Capturing and Recombination Process in Quantum-Dot System: Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime

Kohki Mukai, Yoshiaki Nakata, Mitsuru Sugawara (1.Fujitsu Laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-4-5] Memory Operation of InAs Quantum Dot Field Effect Transistor

Heesoo Son, Junggun Kim, Moondeok Kim, Songcheol Hong (1.Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 2.Samsung Electronics Co.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Addressing Dissipation Phenomena in Silicon Quantum Dots

R. H. Blick, A. Tilke, L. Pescini, H. Lorenz (1.Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universitat)

2000 International Conference on Solid State Devices and Materials |PDF Download