[A-1-7] Novel Nozzle-Scan Coating Method for Low-k Films

R. Nakata, N. Yamada, A. Kajita, S. Ito, K. Okumura, T. Kitano, M. Morikawa, K. Takeshita, Y. Esaki, M. Akimoto (1.PROCESS & MANUFACTURING ENGINEERING CENTER, TOSHIBA CORPORATION, 2.SYSTEM LSI DEVELOPMENT CENTER, TOSHIBA CORPORATION, 3.R&D Dept., Tokyo Electron Kyushu Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Reliability and Electromigration Failure Modes in Dual Inlaid Cu Interconnects

C. Capasso, M. Herrick, M. Gall, D. Jawarani, S. Thrasher, L. Zhao, H. Kawasaki (1.Advanced Products Research and Development Laboratory DigitalDNA TM Laboratories, Motorola, 2.Technology Development Group, Advanced Micro Devices)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Copper Electrodeposition: Principles and Recent Progress

Jonathan Reid (1.Novellus Systems, Portland Technology Center)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity

Tetsuhiro Nanbu, Katsuyuki Sekine, Yuji Saito, Shin-ichi Nakao, Masaki Hirayama, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Copper Ion Drift Rates in Porous Methylsilsesquiazane Dielectric Films

S. Mukaigawa, T. Oda, T. Aoki, Y. Shimizu, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Tonen Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress

Ken-ichi Takeda, Kenji Hinode, Junji Noguchi, Hizuru Yamaguchi (1.Central Research Laboratory, Hitachi LTD., 2.Device Development Center, Hitachi LTD.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-2-6] Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process

Soo Gun Lee, Hyeok-Sang Oh, Hong-Jae Shin, Jin-Gi Hong, Hyeon-Deok Lee, Hokyu Kang (1.Process Development Team, Semiconductor R&D center, Samsung Electronics)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection

Yuichiro Mitani, Hideki Satake, Hitoshi Ito, Akira Toriumi (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N2O and NO Oxynitrides

Takamitsu Ishihara, Shin-ichi Takagi, Masaki Kondo (1.Advanced LSI Thechnology Laboratory, Research and Development center, Toshiba corporation, 2.Semiconductor company, System LSI Division, Toshiba corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] The Impact for Gate Oxide Scaling (32A-12A) and Power Supply for Sub-0.1 μm CMOSFETs

W. K. Yeh, C. Y. Lin, S. M. Cheng, C. T. Huang, H. H. Shih, J. K. Chen, F. T. Liou (1.United Microelectronics Corp., Logic Technology Department, Technology & Process Development Division)

2000 International Conference on Solid State Devices and Materials |PDF Download