[B-1-4] Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode

K. T. Nishinohara, Y. Akasaka, T. Saito, A. Yagishita, A. Murakoshi, K. Suguro, T. Arikado (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] High Density 0.16 μm Embedded-DRAM-ASIC Process Technology for a SoC Platform

J. Ida, H. Tanaka, K. Fukuda, M. Takeda, H. Shinohara, N. Nakayama, E. Seo, K. Yoshida, H. Higashino, Y. Miyakawa, M. Kageyama, Y. Harada, M. Matsumoto, T. Inoue, F. Yokoyama (1.LSI Production Division, VLSI R&D Center, LSI Division, OKI Electric Industry Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-6] 70nm NMOSFET Fabrication with 12nm n+-p Junctions Using As2+A Low Energy Ion Implantations

Byung Yong Choi, Suk Kang Sung, Byung Gook Park, Jong Duk Lee (1.Inter-university Semiconductor Research Center, School of Electrical Engineering, Seoul National University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-7] Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current

Naruhisa Miura, Yuji Abe, Kohei Sugihara, Toshiyuki Oishi, Taisuke Furukawa, Takumi Nakahata, Katsuomi Shiozawa, Shigemitsu Maruno, Yasunori Tokuda (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-1-8] A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond

S. H. Hong, D. H. Ahn, M. H. Park, T. K. Kim, H. K. Kang, J. T. Moon (1.Semiconductor R&D Center, Samsung Electronics Co., LTD)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] 20nm MOS Devices for the Birth of the 21st Century

Simon Deleonibus, Guillaume Bertrand, Georges Guegan, Michel Heitzmann, Pierre Mur, David Souil, Serge Tedesco (1.LETI (CEA-GRENOBLE) Departement de Microelectronique)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] A Study of the VTH Fluctuation for 25nm CMOS

Kiyoshi Takeuchi, Risho Koh, Tohru Mogami (1.Silicon Systems Research Labs., NEC)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs

Anil K. G., S. Mahapatra, V. Ramgopal Rao, I. Eisele (1.Institute of Physics, Universitat der Bundeswehr Munich, 2.Department of Electrical Engineering, Indian Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime

Tetsuo Hatakeyama, Kazuya Matsuzawa, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si1-x Gex PMOSFET's

H. J. Huang, K. M. Chen, T. Y. Huang, G. W. Huang, C. Y. Chang (1.Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 2.National Nano Device Laboratories)

2000 International Conference on Solid State Devices and Materials |PDF Download